Taiwan Semiconductor Corporation HERA807G

Overview

HERA807G from Taiwan Semiconductor is a single-die, glass-passivated, high-efficiency silicon rectifier diode in TO-220AC package, rated for 8 A average forward current, 800 V repetitive peak reverse voltage (VRRM), and 150 A non-repetitive surge current (IFSM), used in freewheeling and switching-mode power supply output stages.

For engineers reviewing the HERA807G datasheet, HERA807G pinout, HERA807G application, or HERA807G equivalent, key selection criteria include its 1.7 V max forward voltage at 8 A/25°C, 55 pF junction capacitance, 80 ns reverse recovery time, TJ = –55°C to +150°C operating range, and AEC-Q101 qualification option (HERA807GH).

Technical Context

The HERA807G is a standard recovery rectifier optimized for high-current DC–DC and SMPS secondary-side rectification, with a single anode–cathode configuration and no integrated snubber or control logic. Its 2°C/W junction-to-case thermal resistance enables direct heatsink mounting without isolation pads under 8 A continuous load.

Designed for operation up to 150°C junction temperature, it delivers stable reverse leakage (<400 µA at 125°C) and low capacitive loading (55 pF at 4 V) across its 800 V rating - distinguishing it from faster but lower-voltage Schottky alternatives and slower, higher-VF general-purpose rectifiers.

Key Specifications

Pinout & Package

TO-220AC package: 3-terminal, single-diode configuration with isolated tab (cathode-connected metal flange), matte tin-plated leads, UL 94V-0 molding compound, and polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with HERA807G, STTH8R06DJF trades voltage headroom for marginally faster recovery, while VS-8EWH08FN-M3 offers functionally equivalent performance with alternate supply chain availability - both retain TO-220AC mechanical fit and 8 A/800 V electrical envelope.

Availability

HERA807G is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and automotive on-board chargers requiring stable component supply, long-lifecycle support, and AEC-Q101-qualified variants (HERA807GH).

Supply support for HERA807G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, MOSFETs, and bipolar transistors since 1979.

The HERA807G belongs to TSC's high-efficiency rectifier family designed specifically for high-reliability, high-current power conversion in industrial, computing, and automotive applications - emphasizing thermal robustness, surge resilience, and long-term parametric stability.

FAQ

What is the maximum junction temperature rating for the HERA807G?

The HERA807G has a maximum junction temperature (TJ) rating of +150°C, with operational range from –55°C to +150°C. This allows reliable use in high-ambient environments such as enclosed power supplies or under-hood automotive locations when paired with appropriate heatsinking. The 2°C/W RθJC value means that at 8 A continuous current, the junction will rise ~16°C above the heatsink temperature - making thermal design straightforward for most industrial applications.

Is the HERA807G pin-compatible with other devices in the HERA80xG series?

Yes, all HERA801G through HERA808G share identical TO-220AC packaging, pinout, and thermal footprint - only VRRM and associated parameters (VF, trr, CJ) differ across the series. This enables drop-in voltage-scaling during design validation or BOM optimization. The HERA807G uses the same anode–cathode–tab configuration and mounting torque specification (≤0.56 N·m) as HERA801G–HERA808G, ensuring full mechanical and layout compatibility.

Does the HERA807G meet automotive qualification standards?

The base HERA807G is not AEC-Q101 qualified, but the HERA807GH variant is fully AEC-Q101 certified for automotive applications. HERA807GH undergoes extended stress testing including temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing (uHAST), meeting the requirements for under-hood and powertrain-related modules. Always specify the "H" suffix when automotive qualification is required.

What is the reverse recovery time (trr) specification for the HERA807G?

The HERA807G has a maximum reverse recovery time (trr) of 80 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This value applies across the full operating temperature range and supports switching frequencies up to 500 kHz in hard-switched topologies. The 80 ns trr balances speed and softness - minimizing switching loss while avoiding excessive dv/dt-induced ringing common in ultrafast diodes.

How does the HERA807G's forward voltage compare to lower-voltage variants in the same family?

The HERA807G has a maximum forward voltage (VF) of 1.7 V at 8 A and 25°C - matching HERA806G and HERA808G, and higher than HERA801G–HERA805G (1.0–1.3 V). This reflects the trade-off between higher blocking voltage and increased series resistance in the epitaxial layer. Designers selecting HERA807G accept ~0.4 V higher VF versus HERA804G (300 V) to gain 500 V additional reverse standoff - critical for 400 V+ DC bus systems.