Taiwan Semiconductor Corporation HERA807G C0G

Overview

HERA807G from Taiwan Semiconductor is an 8 A, 800 V glass-passivated high-efficiency rectifier diode in TO-220AC package, featuring low forward voltage (1.7 V @ 8 A, 25°C), 150 A surge capability, 80 ns reverse recovery time, and AEC-Q101 qualification option. It serves as a primary output rectifier in high-frequency DC-DC converters for automotive power supplies.

For engineers reviewing the HERA807G datasheet, HERA807G pinout, HERA807G application, or HERA807G equivalent, key selection criteria include peak reverse voltage rating (800 V), thermal resistance (2 °C/W), junction capacitance (55 pF), and compliance with automotive reliability standards.

Technical Context

This device is a single-die, planar, glass-passivated silicon rectifier optimized for switching-mode power conversion. Its 80 ns reverse recovery time and low VF support high-frequency operation up to 100 kHz while minimizing conduction and switching losses.

The TO-220AC package provides direct case-to-heatsink thermal path with R_θJC = 2 °C/W, enabling stable 8 A continuous operation at T_C ≤ 100°C. Polarity is marked on the device body, and terminals are matte tin-plated per J-STD-002.

Key Specifications

Pinout & Package

Package: TO-220AC - Three-terminal, single-die, through-hole package with isolated tab (cathode-connected tab). Mounting torque ≤ 0.56 N·m. Matte tin-plated leads, UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH8R06DJF and MUR880E, HERA807G uniquely balances 800 V rating, 1.7 V forward drop, 80 ns recovery, and AEC-Q101 availability - making it optimal for automotive-grade 48 V–800 V power conversion where thermal efficiency and reliability are co-prioritized.

Availability

HERA807G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switch-mode power supplies, and solar microinverter designs requiring stable component supply with traceable sourcing and long-lifecycle assurance.

Supply support for HERA807G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, TVS diodes, and rectifiers for industrial and automotive markets.

The HERA series targets high-efficiency, high-reliability rectification in demanding power conversion applications - designed specifically for 50–1000 V DC-DC, SMPS, and freewheeling roles where low VF, fast recovery, and robust thermal performance are essential.

FAQ

What is the maximum junction temperature rating for HERA807G?

The HERA807G has a maximum junction temperature (T_J) of +150°C, with storage temperature range from –55°C to +150°C. This rating enables reliable operation in under-hood automotive environments and enclosed industrial power enclosures where ambient temperatures exceed 85°C.

Is HERA807G pin-compatible with other TO-220AC rectifiers like HERA806G or HERA808G?

Yes, HERA807G shares identical TO-220AC mechanical dimensions, lead spacing, and pinout with HERA806G and HERA808G. All three use the same anode–cathode–NC terminal assignment and mounting footprint, allowing board-level substitution within the same voltage class family.

Does HERA807G meet automotive qualification standards?

The HERA807G itself is not AEC-Q101 qualified, but its variant HERA807GH is fully AEC-Q101 qualified. The "H" suffix denotes automotive-grade screening and testing per JESD22-A108, including temperature cycling, highly accelerated stress test, and unbiased high-temperature operating life.

What is the typical forward voltage of HERA807G at 8 A and 125°C?

While the datasheet specifies V_F = 1.7 V max at 8 A and 25°C, the typical forward voltage rises to approximately 1.45 V at 8 A and 125°C. This temperature-dependent reduction reflects improved carrier injection efficiency at elevated junction temperatures.

How does the junction capacitance of HERA807G affect EMI in high-frequency converters?

HERA807G exhibits 55 pF junction capacitance at 4 V reverse bias, which influences high-frequency ringing during turn-off. In 100 kHz+ converters, this value necessitates careful snubber design and PCB layout to suppress dv/dt-induced noise - especially critical in automotive EMC-critical zones.