My Inquiry
My Account
Taiwan Semiconductor Corporation HERA807GH
- Part No.:
- HERA807GH
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
HERA807GH.pdf
- Description:
- 80NS, 8A, 800V, HIGH EFFICIENT R
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HERA807GH from Taiwan Semiconductor is an AEC-Q101-qualified, single-die, glass-passivated high-efficiency rectifier in TO-220AC package, rated for 800 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), used in automotive-grade DC-DC converters and switching inverters.
For engineers reviewing the HERA807GH datasheet, HERA807GH pinout, HERA807GH application, or HERA807GH equivalent, key selection criteria include its 800 V VRRM rating, 1.7 V max forward voltage at 8 A/25°C, 80 ns reverse recovery time, 55 pF junction capacitance, and AEC-Q101 qualification for under-hood automotive power systems.
Technical Context
This device is a unidirectional silicon rectifier diode with a single PN junction, optimized for high-frequency switching applications requiring low conduction loss and fast recovery. Its glass-passivated chip junction ensures stable performance under thermal cycling and humidity stress.
The HERA807GH operates with a maximum junction temperature of 150°C, exhibits 2°C/W junction-to-case thermal resistance, and maintains ≤400 µA reverse leakage at 125°C - enabling reliable operation in high-temperature automotive power stages without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 800 V - supports input-side rectification in 400 V AC line-derived or 600 V bus-level DC-DC converters |
| IF | 8 A continuous - delivers sustained power in compact 100–300 W isolated flyback or forward converters |
| VF (max) | 1.7 V @ 8 A, 25°C - reduces conduction loss to ≤13.6 W per device at full load |
| trr | 80 ns - limits switching loss and EMI in 50–200 kHz SMPS designs |
| CJ | 55 pF @ 1 MHz, 4 V - minimizes capacitive coupling noise in high dv/dt gate-drive or snubber circuits |
| RθJC | 2°C/W - enables direct heatsink mounting for thermal management without thermal interface material derating |
| AEC-Q101 | Qualified - validated for automotive power modules requiring Grade 0 (−40°C to +150°C) operation |
Pinout & Package
TO-220AC package: 3-terminal, single-diode configuration with anode (lead 1), cathode (lead 2), and electrically connected tab (cathode). Mounting torque ≤0.56 N·m; matte tin-plated leads compliant with J-STD-002 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Anode | Input terminal for forward conduction; connects to AC or switched node in bridge/freewheeling path |
| Lead 2 | Cathode | Output terminal; electrically tied to metal tab for low-inductance heat sinking and return path |
| Metal Tab | Cathode (common) | Provides primary thermal path to heatsink; must be electrically isolated unless system ground reference permits |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, HAST, and UHST |
| Glass-passivated junction | Eliminates moisture-induced leakage drift and prevents metallization corrosion during 1000+ hour temperature-humidity bias testing |
| Low VF & fast trr | Enables >92% efficiency in 100 kHz 200 W flyback converters without active clamp or synchronous rectification |
| 150 A IFSM rating | Withstands cold-start inrush and short-circuit fault currents in 12 V/24 V automotive DC-DC modules |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and EU RoHS Directive 2011/65/EU for end-of-life recyclability and process safety |
Applications
| Automotive DC-DC Converters | Industrial Switching Inverters |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary output rectifier in synchronous or quasi-resonant forward converter topology. Use Value: 800 V VRRM withstands transient spikes up to 120 V; 1.7 V VF limits power loss to <14 W at 8 A, reducing heatsink size by 35% vs. legacy 1000 V diodes. | Use Scenario: Output stage rectification in 3 kW solar micro-inverter DC link. IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs in H-bridge output stage. Use Value: 80 ns trr suppresses tail current loss during 16 kHz PWM switching; 2°C/W RθJC allows direct tab-mounting to aluminum baseplate without thermal paste. |
| Server PSU Secondary Side | EV Onboard Charger (OBC) PFC Stage |
Use Scenario: Secondary-side synchronous rectification replacement in 80+ Titanium 1.5 kW server power supply. IC Role / Device Role / Timing Role: High-voltage output rectifier in LLC resonant converter secondary. Use Value: 55 pF CJ minimizes capacitive turn-on loss during zero-voltage switching transitions; AEC-Q101 grade assures long-term reliability under 24/7 operation. | Use Scenario: Boost diode in 6.6 kW two-stage OBC PFC front-end operating at 100 kHz. IC Role / Device Role / Timing Role: Fast-recovery boost rectifier handling 8 A average current at 800 V bus. Use Value: 150 A IFSM accommodates 3× overload during grid voltage sag; glass passivation prevents parameter shift after 2000 thermal cycles (−40°C to +125°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06D | 600 V VRRM, 1.85 V VF max @ 8 A, 65 ns trr, TO-220AC | Limited to ≤600 V systems; higher VF increases conduction loss by ~0.9 W at 8 A | Preferred where 600 V rating suffices and lower cost is prioritized over AEC-Q101 compliance |
| VS-8EWH08FN-M3 | 800 V VRRM, 1.75 V VF max @ 8 A, 75 ns trr, AEC-Q101 qualified, TO-220AC | Near-identical electrical specs; slightly higher VF and faster trr, but no junction capacitance spec published | Suitable for drop-in replacement where tighter trr tolerance (<75 ns) is required and CJ data is not critical |
Compared with STTH8R06D and VS-8EWH08FN-M3, the HERA807GH offers the lowest published VF (1.7 V) among AEC-Q101 800 V rectifiers and includes verified 55 pF CJ data - critical for EMI-sensitive automotive DC-DC designs.
Availability
HERA807GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and EV onboard charger PFC stages requiring stable component supply with AEC-Q101 assurance and long-lifecycle support.
Supply support for HERA807GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.
The HERA807GH belongs to TSC's AEC-Q101-qualified HERA series of high-efficiency rectifiers, engineered specifically for high-reliability 48 V–800 V automotive and industrial power conversion where thermal stability and surge robustness are critical.
FAQ
What is the maximum junction temperature rating for the HERA807GH?
The HERA807GH has a maximum junction temperature (TJ) rating of +150°C, validated across its full operating range from −55°C to +150°C. This rating is supported by its 2°C/W junction-to-case thermal resistance and glass-passivated die construction, enabling sustained operation in under-hood automotive environments without thermal runaway.
Is the HERA807GH pin-compatible with other devices in the HERA80xG family?
Yes, all HERA80xG and HERA80xGH devices share identical TO-220AC packaging, pinout (anode–cathode–tab), and mechanical footprint. The HERA807GH uses the same lead frame, terminal geometry, and mounting torque specification (≤0.56 N·m) as HERA801G through HERA808G, allowing board-level substitution within voltage-rated design margins.
Does the HERA807GH require a heatsink in standard operation?
The HERA807GH requires a heatsink when dissipating ≥5 W continuously - typical at ≥3 A average current with 1.7 V VF. Its 2°C/W RθJC assumes direct metal-tab contact to a thermally conductive surface; without heatsinking, junction temperature exceeds 150°C at >2.5 A ambient (25°C), risking premature failure.
What does the "H" suffix in HERA807GH signify?
The "H" suffix in HERA807GH explicitly denotes AEC-Q101 qualification per Rev J2103 documentation. This includes full stress testing across high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (HBM/MM) - distinguishing it from non-H variants like HERA807G which lack automotive qualification evidence.
How does the HERA807GH's reverse recovery time compare to standard rectifiers?
The HERA807GH specifies 80 ns maximum reverse recovery time (trr) at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A - approximately 40% faster than legacy 800 V general-purpose rectifiers (e.g., 130–150 ns). This directly reduces switching loss and EMI in 100–200 kHz SMPS topologies, improving system efficiency by 0.8–1.2% in PFC and DC-DC stages.
HERA807GH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 800 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 800 V
- Capacitance @ Vr, F:
- 55pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERA807GH FAQ
1.How can I place an order for HERA807GH through Aetrix?
Please submit a Request for Quotation (RFQ) for HERA807GH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERA807GH reliable?
The price and inventory of HERA807GH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERA807GH is usually 5 days.
3.What payment methods are accepted for HERA807GH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERA807GH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERA807GH?
HERA807GH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERA807GH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERA807GH?
For technical support, including HERA807GH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERA807GH requirements.
6.How does Aetrix verify that HERA807GH is sourced from the original manufacturer or authorized distributors?
All HERA807GH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERA807GH meets industry standards.
7.What is the process for return or replacement of HERA807GH?
All HERA807GH units undergo pre-shipment inspection (PSI). If there is an issue with HERA807GH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERA807GH part is unused and in its original packaging.
Return procedure for HERA807GH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HERA807GH Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
