Taiwan Semiconductor Corporation HERA808G

Overview

HERA808G from Taiwan Semiconductor is a single-die, glass-passivated, high-efficiency silicon rectifier diode in TO-220AC package, rated for 1000 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), used in high-voltage DC-DC converters and freewheeling paths.

For engineers reviewing the HERA808G datasheet, HERA808G pinout, HERA808G application, or HERA808G equivalent, key selection criteria include its 1000 V VRRM rating, 1.7 V max forward voltage at 8 A/25°C, 80 ns reverse recovery time, 55 pF junction capacitance, and AEC-Q101 qualification availability (HERA808GH variant).

Technical Context

This device is a unidirectional, standard recovery rectifier optimized for switching-mode power supplies operating at moderate frequencies (e.g., <100 kHz). Its 2 °C/W junction-to-case thermal resistance enables reliable 8 A conduction with appropriate heatsinking, while the glass-passivated junction ensures stable performance under thermal cycling and humidity stress.

The HERA808G exhibits a typical reverse recovery time of 80 ns under IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A conditions, and reverse leakage ≤400 µA at 125°C - critical for minimizing switching losses and EMI in high-voltage flyback and forward converter freewheeling legs.

Key Specifications

Pinout & Package

Package: TO-220AC - 3-lead, single-ended, through-hole molded plastic case with isolated tab (cathode-connected tab), UL 94V-0 rated, matte tin-plated leads, 1.80 g mass, 0.56 N·m max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH8R06D and VS-8EWH10, the HERA808G delivers optimal balance of 1000 V rating, 1.7 V VF, and 80 ns trr in TO-220AC - making it preferred for 800–1000 V DC systems requiring both voltage margin and efficiency.

Availability

HERA808G is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive on-board chargers, and solar microinverter designs requiring stable component supply and long-term manufacturability.

Supply support for HERA808G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The HERA808G belongs to TSC's high-voltage rectifier product line, engineered for efficiency-critical power conversion in 400–1000 V systems where reliability, surge tolerance, and thermal performance are prioritized over ultra-fast recovery.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) for HERA808G?

The HERA808G has a VRRM rating of 1000 V, confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version J2103). This allows safe operation in 800 V DC bus applications with sufficient voltage margin against transients. The "8" in HERA808G explicitly denotes the 1000 V grade within the HERA801G–HERA808G family.

Is HERA808G suitable for automotive applications?

The HERA808G itself is not AEC-Q101 qualified, but its variant HERA808GH is fully AEC-Q101 certified. Engineers designing automotive on-board chargers or DC-DC converters should specify HERA808GH to meet automotive reliability and stress-test requirements. The base HERA808G remains suitable for industrial and commercial power supplies.

What is the forward voltage drop of HERA808G at rated current?

The HERA808G exhibits a maximum forward voltage (VF) of 1.7 V at 8 A forward current and 25°C junction temperature, per the Electrical Specifications table. At elevated temperatures (e.g., 125°C), VF decreases slightly, but thermal design must ensure junction temperature stays within –55°C to +150°C limits to maintain reliability.

Does HERA808G have a built-in thermal pad or isolated tab?

The HERA808G uses a TO-220AC package with an electrically connected cathode tab - meaning the metal tab is internally tied to the cathode terminal. It is not isolated; therefore, an insulating washer and shoulder washer are required when mounting to a grounded heatsink. No thermal pad is integrated - external thermal interface material is needed for optimal RθJC performance.

How does the reverse recovery time (trr) of HERA808G compare to lower-voltage variants in the same family?

The HERA808G has a specified trr of 80 ns (max), whereas HERA801G–HERA805G are rated at 50 ns (max). This reflects the trade-off between higher blocking voltage and minority carrier lifetime optimization. For 1000 V applications, 80 ns remains suitable for 50–100 kHz switching frequencies, though designers should verify EMI and loss budgets in their specific topology.