Taiwan Semiconductor Corporation HERA808GH

Overview

HERA808GH from Taiwan Semiconductor is an AEC-Q101-qualified, high-efficiency 8A, 1000V single-die glass-passivated axial-junction rectifier in TO-220AC package, optimized for automotive and industrial switching-mode power supplies requiring low forward voltage and high surge robustness.

For engineers reviewing the HERA808GH datasheet, HERA808GH pinout, HERA808GH application, or HERA808GH equivalent, key selection criteria include its 1000V VRRM rating, 1.7V max VF at 8A/25°C, 150A IFSM capability, 80ns trr, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This device operates as a unidirectional high-voltage freewheeling diode with axial junction construction, enabling stable conduction under repetitive surge conditions. Its glass passivation ensures long-term reliability in humid or thermally cycling environments.

The HERA808GH delivers 2°C/W junction-to-case thermal resistance and supports continuous operation up to +150°C junction temperature, making it suitable for compact, high-power-density DC-DC converters where thermal management is critical.

Key Specifications

Pinout & Package

Package: TO-220AC - Three-terminal, single-die through-hole package with isolated tab (cathode), designed for mechanical mounting and thermal dissipation via heatsink contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH12R06DJF and VS-8EWH10FN-M3, HERA808GH uniquely balances 1000V blocking, AEC-Q101 compliance, and 1.7V VF-making it optimal for space-constrained, thermally demanding automotive 800V systems where both reliability and efficiency are prioritized.

Availability

HERA808GH is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial 48V DC-DC converters, and renewable energy inverters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HERA808GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability power devices for automotive, industrial, and computing markets.

The HERA801G–HERA808G series was developed specifically for high-efficiency, high-voltage rectification in next-generation automotive electrification and industrial power conversion systems demanding AEC-Q101 compliance and extended thermal performance.

FAQ

What is the maximum junction temperature rating for HERA808GH?

The HERA808GH has a maximum junction temperature (TJ MAX) of +150°C, verified per JEDEC JESD22-A108. This rating enables continuous operation in high-ambient environments such as engine compartments or sealed industrial enclosures. Derating curves in the official datasheet define allowable IF versus case temperature, and HERA808GH maintains full 8A current capability up to +110°C case temperature when mounted on a heatsink with ≤2°C/W thermal resistance.

Is HERA808GH pin-compatible with other TO-220AC rectifiers like HERA806GH or STTH8R06?

Yes, HERA808GH uses the standard TO-220AC outline with identical mechanical dimensions and terminal spacing as HERA806GH and STTH8R06. All share the same anode–cathode–tab pinout configuration and mounting hole pattern. However, HERA808GH's 1000V VRRM and 1.7V VF differ from HERA806GH (800V, 1.3V VF) and STTH8R06 (600V, 1.7V VF), so electrical substitution requires verification of voltage margin and thermal performance in the target design.

Does HERA808GH require a heatsink in typical 8A operation?

HERA808GH requires a heatsink for sustained 8A operation at ambient temperatures above 45°C. With its 2°C/W RθJC and 1.7V VF, power dissipation reaches ~13.6W at full load-generating >27°C temperature rise across the junction-to-case path alone. Without heatsinking, case temperature would exceed 150°C within seconds. A minimum 10°C/W heatsink (including interface resistance) is recommended to maintain TJ ≤135°C at 25°C ambient.

What does the "H" suffix in HERA808GH signify?

The "H" suffix in HERA808GH indicates full AEC-Q101 qualification per revision D, covering stress tests including high-temperature reverse bias (HTRB), temperature cycling (TC), and highly accelerated life testing (HALT). This distinguishes HERA808GH from the non-H variant HERA808G, which lacks automotive qualification documentation and is intended for industrial/commercial use only. Both share identical electrical specs and packaging.

How does HERA808GH's reverse recovery time compare to standard FRDs?

HERA808GH has a maximum reverse recovery time (trr) of 80ns under IF = 0.5A, IR = 1.0A, Irr = 0.25A test conditions-comparable to fast recovery diodes (FRDs) in the same voltage class. This is significantly faster than general-purpose rectifiers (typically 500–2000ns) and enables efficient operation in 100–300kHz switching converters. The 80ns trr directly reduces switching loss and EMI generation compared to slower alternatives like 1N5408 or BYV26E.