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Taiwan Semiconductor Corporation HERAF1002G
- Part No.:
- HERAF1002G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF1002G.pdf
- Description:
- 50NS, 10A, 100V, HIGH EFFICIENT
- Quantity:
- Payment:
- Shipping:
Inventory:8,769
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Product details
Overview
HERAF1002G from Taiwan Semiconductor is a 10 A, 100 V glass-passivated high-efficiency rectifier diode in ITO-220AC package, featuring 150 A surge capability, 1.0 V max forward voltage at 10 A and 25°C, and 50 ns reverse recovery time - used in DC/DC converters and switching-mode inverters.
For engineers reviewing the HERAF1002G datasheet, HERAF1002G pinout, HERAF1002G application, or HERAF1002G equivalent, key selection criteria include repetitive peak reverse voltage (100 V), thermal resistance (2°C/W), junction temperature range (–55°C to +150°C), RoHS/halogen-free compliance, and AEC-Q101 qualification availability.
Technical Context
This single-die fast recovery rectifier uses glass passivation for enhanced junction reliability and operates with low conduction loss due to its 1.0 V VF max at rated current. Its 50 ns trr supports high-frequency switching topologies without excessive switching loss.
The ITO-220AC package provides direct heatsink mounting via the case (anode-connected tab), enabling efficient thermal transfer with 2°C/W junction-to-case resistance. Polarity is marked on device, and terminals are matte tin-plated per J-STD-002 solderability standard.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - maximum non-repetitive reverse blocking voltage; defines safe operating limit in flyback/freewheeling paths |
| IF | 10 A - continuous average forward current; determines steady-state power handling in converter output stages |
| IFSM | 150 A - 8.3 ms half-sine surge rating; supports inrush and transient overload conditions without failure |
| VF @ 10A, 25°C | ≤1.0 V - low conduction loss improves efficiency in high-current DC/DC outputs |
| trr | ≤50 ns - fast recovery minimizes switching losses and EMI in 100 kHz–500 kHz SMPS designs |
| RθJC | 2°C/W - enables direct heatsink mounting for thermal management in space-constrained industrial power supplies |
| TJ Range | –55°C to +150°C - wide operating junction temperature supports under-hood automotive and industrial environments |
Pinout & Package
ITO-220AC package with isolated tab (anode), two leads (cathode and anode), and polarity marking. Mounting torque ≤0.56 N·m. Weight ≈1.70 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Case) | Anode | Electrically connected to anode; serves as primary thermal path to heatsink; requires electrical isolation when mounted |
| Lead 1 | Cathode | Main cathode terminal; carries full forward current; solderable matte tin plating per J-STD-002 |
| Lead 2 | Anode | Secondary anode connection; used for mechanical stability and current sharing; same potential as tab |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enhances moisture resistance and long-term reliability in humid or thermally cycled environments |
| UL Recognized (E-326243) | Validates safety compliance for end-equipment certification in industrial and consumer power systems |
| Halogen-free (IEC 61249-2-21) | Meets environmental regulations for RoHS-compliant manufacturing and end-of-life disposal |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth under thermal stress, critical for automotive and aerospace applications |
Applications
| DC/DC Converter Output Stage | Switching Mode Inverter Freewheeling |
|---|---|
Use Scenario: Secondary-side rectification in isolated 48 V–12 V buck-derived DC/DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: High-current freewheeling diode conducting during MOSFET off-time; handles 10 A continuous and 150 A surge. Use Value: 1.0 V VF max reduces conduction loss by ~15% vs. standard FRDs, improving full-load efficiency by 0.8–1.2%. | Use Scenario: Bidirectional energy recirculation in motor drive H-bridge inverters operating at 20–100 kHz. IC Role / Device Role / Timing Role: Fast-recovery freewheeling path for inductive kickback; clamps voltage spikes within 50 ns recovery window. Use Value: 50 ns trr limits reverse recovery charge (Qrr), reducing switching loss and snubber stress compared to 100+ ns alternatives. |
| Automotive On-Board Charger (OBC) Auxiliary Supply | Industrial AC-DC Front-End Rectification |
Use Scenario: Auxiliary 12 V supply rectification in AEC-Q101 qualified OBC modules for EVs. IC Role / Device Role / Timing Role: Input rectifier for isolated auxiliary flyback converter; operates continuously at –40°C to +125°C ambient. Use Value: –55°C to +150°C TJ range and optional AEC-Q101 qualification enable deployment in under-hood environments without derating. | Use Scenario: Primary-side input rectification in 3 kW industrial AC-DC PFC front-ends with active clamp circuits. IC Role / Device Role / Timing Role: High-surge-capable input diode handling line transients and capacitor charging surges. Use Value: 150 A IFSM withstands repeated 10× inrush events during cold-start, extending system lifetime vs. 100 A-rated alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | 600 V VRRM, 1.7 V VF @ 10 A, TO-220AC package, 75 ns trr | Higher voltage rating but higher VF and slower recovery; suited for 400 V bus systems, not 100 V optimized designs | Select only if system requires >100 V blocking; HERAF1002G delivers lower loss at 100 V with faster switching |
| ON Semi MUR1020CT | 200 V VRRM, dual common-cathode configuration, 1.25 V VF @ 10 A, TO-220AB package | Dual-diode layout adds routing complexity; VF higher than HERAF1002G; no AEC-Q101 option | Use only when dual-diode topology is required; HERAF1002G offers superior thermal performance and automotive qualification path |
Compared with STTH10R06DJF and MUR1020CT, HERAF1002G provides optimal balance of low VF (≤1.0 V), fast trr (≤50 ns), and 100 V rating for cost-sensitive, high-efficiency 12–48 V DC/DC and inverter freewheeling - with optional AEC-Q101 qualification and halogen-free compliance.
Availability
HERAF1002G is available at Aetrix Electronics and suitable for DC/DC converters, switching-mode inverters, and freewheeling applications requiring stable component supply, automotive-grade reliability options, and RoHS-compliant sourcing.
Supply support for HERAF1002G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.
The HERAF series targets high-reliability power conversion applications, emphasizing low VF, fast recovery, and robust packaging for use in demanding thermal and electrical environments.
FAQ
What is the maximum junction temperature rating for HERAF1002G?
The HERAF1002G has a maximum junction temperature (TJ MAX) of +150°C and a minimum of –55°C. This wide operating range allows reliable operation in under-hood automotive environments and industrial enclosures without forced cooling. The 2°C/W junction-to-case thermal resistance supports effective heatsinking to maintain HERAF1002G within this limit under full 10 A load.
Is HERAF1002G pin-compatible with other devices in the HERAF1001G–HERAF1008G family?
Yes - all HERAF1001G through HERAF1008G share identical ITO-220AC packaging, pinout, and thermal/mechanical dimensions. Only VRRM, VF, trr, and CJ vary across the family. HERAF1002G can be substituted for HERAF1001G or HERAF1003G in existing layouts, provided voltage and recovery requirements align with the design.
Does HERAF1002G meet automotive qualification standards?
HERAF1002G is available in an AEC-Q101 qualified version denoted by the suffix "H" (e.g., HERAF1002GH). The base HERAF1002G is not automatically qualified; users must specify the "H" variant for automotive applications. Both versions share identical electrical specs, but only HERAF1002GH undergoes stress testing per AEC-Q101.
What is the reverse leakage current specification for HERAF1002G at elevated temperature?
At TJ = 125°C and rated VR (100 V), HERAF1002G exhibits a maximum reverse leakage current (IR) of 400 µA. At 25°C, IR is limited to 10 µA. This low leakage supports stable operation in high-temperature power supplies where thermal runaway or standby power loss must be minimized.
How does the glass passivation in HERAF1002G improve long-term reliability?
Glass passivation protects the silicon die surface from moisture ingress, ionic contamination, and mechanical stress during thermal cycling. For HERAF1002G, this results in demonstrated reliability over 1,000 hours HTOL (High-Temperature Operating Life) at 150°C and improved resistance to bias-HAST failure - critical for industrial and automotive deployments where field failure rates must remain below 100 FIT.
HERAF1002G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 100 V
- Capacitance @ Vr, F:
- 80pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF1002G FAQ
1.How can I place an order for HERAF1002G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF1002G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF1002G reliable?
The price and inventory of HERAF1002G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF1002G is usually 5 days.
3.What payment methods are accepted for HERAF1002G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF1002G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF1002G?
HERAF1002G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF1002G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF1002G?
For technical support, including HERAF1002G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF1002G requirements.
6.How does Aetrix verify that HERAF1002G is sourced from the original manufacturer or authorized distributors?
All HERAF1002G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF1002G meets industry standards.
7.What is the process for return or replacement of HERAF1002G?
All HERAF1002G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF1002G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF1002G part is unused and in its original packaging.
Return procedure for HERAF1002G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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