Taiwan Semiconductor Corporation HERAF1004G

Overview

HERAF1004G from Taiwan Semiconductor is a 10 A, 300 V repetitive peak reverse voltage (V_RRM) glass-passivated high-efficiency fast recovery rectifier in ITO-220AC package, featuring 1.0 V typical forward voltage at 10 A and 50 ns reverse recovery time, used in DC-DC converters and switching-mode inverters.

For engineers reviewing the HERAF1004G datasheet, HERAF1004G pinout, HERAF1004G application, or HERAF1004G equivalent, key selection criteria include V_RRM = 300 V, I_F = 10 A, t_rr = 50 ns, R_θJC = 2 °C/W, and UL Recognized File # E-326243 compliance for automotive-grade power conversion designs.

Technical Context

This single-die standard recovery rectifier uses glass-passivated junction technology to achieve stable thermal performance and high surge robustness. Its 2 °C/W junction-to-case thermal resistance enables reliable operation at 150 °C maximum junction temperature under 10 A continuous forward current.

The device delivers 50 ns reverse recovery time at I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A - critical for minimizing switching losses in high-frequency SMPS topologies operating up to several hundred kHz.

Key Specifications

Pinout & Package

ITO-220AC package with 3-terminal configuration: Anode (pin 1), Cathode (pin 2), and metal tab (pin 3, electrically connected to cathode). Matte tin-plated leads meet J-STD-002 solderability; polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH10R06DJF and MUR1030CT, HERAF1004G provides optimal balance of 300 V rating, 50 ns recovery, and UL recognition for cost-sensitive industrial DC-DC converters-without over-spec'ing voltage or compromising thermal robustness.

Availability

HERAF1004G is available at Aetrix Electronics and suitable for DC-DC converters, switching-mode inverters, and freewheeling applications requiring stable component supply, automotive-grade traceability, and RoHS/halogen-free compliance.

Supply support for HERAF1004G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The HERAF series targets high-reliability power conversion applications, emphasizing thermal robustness, surge resilience, and regulatory compliance for mission-critical industrial and automotive auxiliary power stages.

FAQ

What is the maximum junction temperature rating for HERAF1004G?

The HERAF1004G has a maximum junction temperature (T_J) of +150°C, verified across its full operating range from –55°C to +150°C. This rating enables reliable operation in high-ambient environments such as enclosed industrial power supplies or under-hood automotive modules when mounted on an appropriate heatsink with ≤2 °C/W total thermal resistance.

Does HERAF1004G have AEC-Q101 qualification?

The standard HERAF1004G is not AEC-Q101 qualified; however, the HERAF1004GH variant is explicitly qualified per AEC-Q101. Both share identical electrical and thermal specifications, with the 'H' suffix indicating automotive-grade screening, including HTGB, HTRB, and temperature cycling tests. HERAF1004G remains suitable for industrial applications requiring UL recognition and RoHS compliance.

What is the reverse recovery time (t_rr) of HERAF1004G and how is it measured?

The HERAF1004G has a reverse recovery time (t_rr) of 50 ns maximum, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A per the manufacturer's test circuit in Figure 6 of the datasheet. This value reflects performance at room temperature and confirms suitability for switching frequencies up to 300 kHz with controlled turn-off loss.

Can HERAF1004G be used as a direct replacement for HERAF1003G in an existing design?

Yes, HERAF1004G can replace HERAF1003G without circuit or layout changes: both use identical ITO-220AC packaging, share the same 10 A I_F, 150 A I_FSM, and 1.0 V V_F, differing only in V_RRM (200 V → 300 V) and VR(RMS) (140 V → 210 V). The higher voltage rating provides increased margin against transients and improves long-term reliability in noisy line environments.

What is the junction-to-case thermal resistance (R_θJC) of HERAF1004G and why does it matter?

The HERAF1004G has a typical junction-to-case thermal resistance (R_θJC) of 2 °C/W, measured from die junction to the metal tab surface. This low value directly determines heatsink sizing: for example, at 10 A and 1.0 V V_F, power dissipation is ~10 W; with 2 °C/W R_θJC and a 1.5 °C/W heatsink, junction temperature rise is only 35°C above ambient - well within the 150°C limit.