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Taiwan Semiconductor Corporation HERAF1006G
- Part No.:
- HERAF1006G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF1006G.pdf
- Description:
- DIODE GEN PURP 600V 10A ITO220AC
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
HERAF1006G from Taiwan Semiconductor is a single-die, glass-passivated, high-efficiency fast recovery rectifier diode rated for 10 A average forward current, 600 V repetitive peak reverse voltage (VRRM), and 150 A non-repetitive surge current (IFSM), used in freewheeling and switching-mode power supply output stages.
For engineers reviewing the HERAF1006G datasheet, HERAF1006G pinout, HERAF1006G application, or HERAF1006G equivalent, key selection criteria include its 1.7 V max forward voltage at 10 A/25°C, 80 ns reverse recovery time, 60 pF junction capacitance, ITO-220AC package thermal resistance of 2°C/W, and AEC-Q101 qualification availability (HERAF1006GH variant).
Technical Context
This device operates as a unidirectional power rectifier with fast recovery characteristics optimized for high-frequency switching converters. Its 600 V VRRM rating supports 420 V RMS input applications, and the 80 ns trr enables efficient operation in 100–500 kHz DC-DC topologies without excessive switching loss.
The ITO-220AC package provides direct heatsink mounting via the cathode tab, enabling thermal management under continuous 10 A conduction. The 2°C/W RθJC allows junction temperature control up to +150°C when case temperature is maintained ≤130°C at full load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports 420 V RMS bridge rectified inputs with 1.4× safety margin |
| IF(AV) | 10 A - continuous DC output current capability in SMPS secondary side |
| IFSM | 150 A - handles inrush and transient surges in PFC and converter startup |
| VF(max) | 1.7 V @ 10 A, 25°C - determines conduction loss and thermal load in high-current paths |
| trr | 80 ns - enables stable operation up to ~500 kHz without excessive reverse recovery loss |
| CJ | 60 pF @ 1 MHz, 4 V - minimizes capacitive coupling noise in high-dv/dt environments |
| RθJC | 2°C/W - enables direct heatsink attachment for thermal dissipation in compact layouts |
Pinout & Package
Package: ITO-220AC - insulated TO-220 variant with electrically isolated metal tab (cathode), matte tin-plated leads, UL 94V-0 molding compound, and 1.70 g mass. Mounting torque ≤0.56 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input current entry point | Soldered to transformer secondary or switch node; carries full forward current |
| Cathode (Tab) | Output current exit point | Electrically isolated metal tab serves as high-current return path and thermal interface to heatsink |
| NC / Isolation Barrier | Internal insulation layer | Provides creepage/clearance isolation between tab and lead frame per IEC 60664-1 |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enables stable leakage performance across -55°C to +150°C operating range with <400 µA IR at 125°C |
| Fast recovery (80 ns) | Reduces reverse recovery charge (Qrr) to minimize switching loss and EMI in high-frequency converters |
| UL Recognized (E-326243) | Validates flammability, dielectric strength, and construction compliance for end-equipment safety certification |
| AEC-Q101 qualification option | HERAF1006GH variant meets stress test requirements for automotive under-hood power modules |
| Junction-to-case thermal resistance | 2°C/W enables >8 W power dissipation with ≤20°C case-to-junction rise at 10 A conduction |
Applications
| DC-DC Converter Output Rectification | Switching Inverter Freewheeling |
|---|---|
Use Scenario: Secondary-side synchronous or diode rectification in isolated 48 V–600 V input DC-DC converters. IC Role / Device Role / Timing Role: Unidirectional current steering device conducting during positive half-cycle of transformer secondary voltage. Use Value: 1.7 V VF and 80 ns trr reduce conduction and switching losses, improving efficiency by ≥0.8% at 200 kHz compared to standard FRDs. | Use Scenario: Freewheeling path for inductive loads in motor drive inverters and UPS systems. IC Role / Device Role / Timing Role: Provides low-impedance return path during MOSFET/IGBT off-time to clamp inductive kickback. Use Value: 150 A IFSM withstands repetitive inductive surge events; 600 V VRRM covers 400 V bus applications with margin. |
| Industrial AC-DC Power Supply | Automotive On-Board Charger (OBC) Auxiliary Stage |
Use Scenario: Output rectification in 1–3 kW industrial SMPS with universal AC input and active PFC front-end. IC Role / Device Role / Timing Role: High-current output diode handling continuous 10 A load with minimal thermal derating. Use Value: ITO-220AC package with 2°C/W RθJC allows direct heatsink mounting, eliminating need for thermal pads or complex layout. | Use Scenario: Auxiliary 12 V/24 V DC-DC stage in AEC-Q101-compliant OBC modules. IC Role / Device Role / Timing Role: Rectifier in isolated flyback or forward converter powering control logic and gate drivers. Use Value: HERAF1006GH variant satisfies automotive reliability requirements while maintaining identical electrical specs and footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | 600 V VRRM, 10 A IF, 75 ns trr, TO-220AC package, no AEC-Q101 option | Lower trr improves high-frequency efficiency but lacks automotive qualification path | Preferred where ultra-fast recovery dominates over qualification requirements |
| VS-10EWH06FN-M3 | 600 V VRRM, 10 A IF, 90 ns trr, TO-220AC, AEC-Q101 qualified, 1.85 V VF max | Higher VF increases conduction loss; same thermal resistance and mounting interface | Selected when AEC-Q101 compliance is mandatory and 0.15 V VF penalty is acceptable |
Compared with STTH10R06DJF and VS-10EWH06FN-M3, HERAF1006G offers balanced trade-offs: lower VF than Vishay's part and AEC-Q101 availability (via GH variant) unlike STMicro's offering-making it optimal for cost-sensitive industrial and automotive-adjacent designs requiring both efficiency and qualification flexibility.
Availability
HERAF1006G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, switching inverter freewheeling, and industrial AC-DC power supplies requiring stable component supply, long-term manufacturability, and RoHS/halogen-free compliance.
Supply support for HERAF1006G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.
The HERAF1001G–HERAF1008G family targets high-efficiency, high-reliability power conversion in space-constrained and thermally demanding applications, emphasizing fast recovery, low VF, and robust surge capability across 50–1000 V voltage grades.
FAQ
What is the maximum repetitive peak reverse voltage (VRRM) rating for HERAF1006G?
The HERAF1006G has a VRRM rating of 600 V, verified in the manufacturer's absolute maximum ratings table. This value defines the highest instantaneous reverse voltage the device can block repeatedly without breakdown. It corresponds to a 420 V RMS input capability and is confirmed across all electrical and thermal derating curves in the official datasheet revision I2105.
Does HERAF1006G have AEC-Q101 qualification?
HERAF1006G itself is not AEC-Q101 qualified; however, the HERAF1006GH variant-identical in all electrical and mechanical specifications except qualification status-is explicitly listed as AEC-Q101 qualified in the ordering information section. The "H" suffix denotes this qualification, and both variants share the same ITO-220AC package and marking code structure.
What is the forward voltage (VF) specification for HERAF1006G at rated current?
HERAF1006G has a maximum forward voltage of 1.7 V at 10 A forward current and 25°C junction temperature, as specified in the electrical characteristics table. This value is measured under pulse conditions (PW = 0.3 ms) and represents worst-case conduction loss for thermal design. At 125°C, VF decreases slightly due to semiconductor physics but remains within practical design margins.
What is the reverse recovery time (trr) of HERAF1006G and how is it tested?
The HERAF1006G has a maximum reverse recovery time of 80 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, per the test circuit diagram in Figure 6 of the datasheet. This parameter reflects the time required for minority carriers to recombine after forward conduction, directly impacting switching loss and EMI in high-frequency converters.
Can HERAF1006G be mounted directly to a heatsink, and what is the recommended torque?
Yes, HERAF1006G in the ITO-220AC package features an electrically isolated metal tab designed for direct heatsink mounting. The datasheet specifies a maximum mounting torque of 0.56 N·m to ensure reliable thermal contact without damaging the internal bond wires or insulation layer. Exceeding this torque risks mechanical failure or reduced thermal performance.
HERAF1006G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 600 V
- Capacitance @ Vr, F:
- 60pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF1006G FAQ
1.How can I place an order for HERAF1006G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF1006G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF1006G reliable?
The price and inventory of HERAF1006G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF1006G is usually 5 days.
3.What payment methods are accepted for HERAF1006G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF1006G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF1006G?
HERAF1006G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF1006G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF1006G?
For technical support, including HERAF1006G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF1006G requirements.
6.How does Aetrix verify that HERAF1006G is sourced from the original manufacturer or authorized distributors?
All HERAF1006G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF1006G meets industry standards.
7.What is the process for return or replacement of HERAF1006G?
All HERAF1006G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF1006G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF1006G part is unused and in its original packaging.
Return procedure for HERAF1006G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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