Taiwan Semiconductor Corporation HERAF1006GH

Overview

HERAF1006GH from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified single-die fast recovery rectifier in ITO-220AC package, rated for 600 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 150 A surge current (IFSM). It delivers 1.7 V typical forward voltage at 10 A and 25°C, with 80 ns reverse recovery time, suited for automotive-grade DC-DC converters and switching inverters.

For engineers reviewing the HERAF1006GH datasheet, HERAF1006GH pinout, HERAF1006GH application, or HERAF1006GH equivalent, key selection factors include its AEC-Q101 qualification, 600 V VRRM rating, 1.7 V VF at 10 A, 80 ns trr, and ITO-220AC thermal performance (RθJC = 2°C/W) for high-reliability power conversion designs.

Technical Context

This device is a single-die, glass-passivated silicon rectifier optimized for fast recovery in high-frequency switching applications. Its 600 V VRRM rating and 80 ns trr enable efficient operation in 50–200 kHz SMPS topologies, while the 2°C/W junction-to-case thermal resistance supports direct heatsink mounting without thermal derating penalties up to 150°C junction temperature.

The HERAF1006GH features matte tin-plated leads compliant with J-STD-002, UL 94V-0 molding compound, and meets JESD201 Class 2 whisker resistance. Its 10 µA max reverse leakage at 25°C and 400 µA at 125°C ensures stable blocking under elevated ambient conditions in automotive under-hood environments.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab, UL Recognized (E-326243), RoHS and halogen-free compliant, 1.70 g weight, 0.56 N·m max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast rectifier applications.

Compared with STTH10L06TV and MUR1060CT, the HERAF1006GH uniquely combines AEC-Q101 compliance, 150 A IFSM, and ITO-220AC isolation-making it the only drop-in option for automotive front-end converters requiring both safety certification and robust surge immunity.

Availability

HERAF1006GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and solar microinverter designs requiring stable component supply, long-lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for HERAF1006GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The HERAF series targets high-reliability power conversion applications, emphasizing AEC-Q101 qualification, fast recovery, and thermal robustness for next-generation EV, renewable energy, and industrial automation systems.

FAQ

What is the maximum junction temperature rating for HERAF1006GH?

The HERAF1006GH has a maximum junction temperature (TJ MAX) of +150°C, verified per absolute maximum ratings in the official TSC datasheet Version I2105. This rating applies under continuous operation with proper heatsinking and accounts for thermal resistance of 2°C/W from junction to case. Derating curves confirm usable current capacity down to 0 A at 150°C case temperature, making HERAF1006GH suitable for under-hood automotive environments.

Is HERAF1006GH pin-compatible with standard TO-220AC rectifiers?

Yes, HERAF1006GH uses the ITO-220AC package, which shares identical mechanical footprint and lead spacing with TO-220AC but features an electrically isolated metal tab. Unlike standard TO-220AC, the tab is internally connected to the cathode and must be insulated from the heatsink unless circuit topology permits common-cathode mounting. Mounting torque must not exceed 0.56 N·m to avoid package damage.

Does HERAF1006GH meet automotive qualification standards?

Yes, the "H" suffix in HERAF1006GH explicitly denotes AEC-Q101 qualification per TSC's ordering information and features list. This includes full stress testing for high-temperature operating life, temperature cycling, humidity bias, and unclamped inductive switching. The device is UL Recognized (File # E-326243) and halogen-free per IEC 61249-2-21, satisfying Tier-1 automotive supply chain requirements.

What is the reverse recovery time (trr) specification for HERAF1006GH?

The HERAF1006GH has a maximum reverse recovery time (trr) of 80 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per the electrical specifications table in the TSC datasheet. This value is confirmed for the entire HERAF1006G–HERAF1008G group and reflects optimized carrier lifetime control for high-frequency switching applications such as LLC resonant converters and phase-shifted full-bridge topologies.

How does the forward voltage (VF) of HERAF1006GH compare across temperature?

The HERAF1006GH exhibits a typical forward voltage of 1.7 V at 10 A and 25°C, rising to approximately 1.45 V at 125°C due to negative temperature coefficient of silicon PN junctions. This behavior is documented in Figure 4 (Typical Forward Characteristics) of the TSC datasheet, confirming reduced conduction loss at elevated temperatures-a beneficial trait for thermally constrained power stages where junction temperature naturally rises during operation.