Taiwan Semiconductor Corporation HERAF1007G

Overview

HERAF1007G from Taiwan Semiconductor is a single-die, high-efficiency ultrafast recovery rectifier in ITO-220AC package, rated for 800 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 150 A surge current (IFSM). It delivers 1.7 V max forward voltage at 10 A and 25°C, with 80 ns reverse recovery time (trr), suited for high-frequency switching power supplies.

For engineers reviewing the HERAF1007G datasheet, HERAF1007G pinout, HERAF1007G application, or HERAF1007G equivalent, key selection factors include its 800 V VRRM rating, 1.7 V VF at full load, 80 ns trr, ITO-220AC thermal performance (RθJC = 2°C/W), and AEC-Q101 qualification option (HERAF1007GH).

Technical Context

The HERAF1007G employs a glass-passivated silicon junction optimized for fast switching and low conduction loss. Its 800 V VRRM and 150 A IFSM support robust operation in transient-prone DC/DC and inverter circuits, while the 80 ns trr enables efficient operation up to several hundred kHz.

Thermally, the ITO-220AC package provides low 2°C/W junction-to-case resistance, enabling 10 A continuous conduction with moderate heatsinking. The device operates across –55°C to +150°C junction temperature range and meets UL 94V-0 and JESD201 Class 2 whisker requirements.

Key Specifications

Pinout & Package

Package: ITO-220AC - insulated TO-220 variant with isolated collector tab, matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH10R06DJF and IXYS MUR1080CT, the HERAF1007G uniquely combines 800 V rating, 80 ns trr, ITO-220AC isolation, and AEC-Q101 qualification path-making it optimal for automotive-grade 400 V+ DC/DC and industrial inverters where voltage margin and reliability are critical.

Availability

HERAF1007G is available at Aetrix Electronics and suitable for DC/DC converters, switching mode inverters, and freewheeling applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HERAF1007G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and automotive-qualified components.

The HERAF1007G belongs to TSC's high-voltage ultrafast rectifier product line, engineered for high-efficiency power conversion in automotive, industrial, and telecom power systems where reliability, thermal performance, and voltage margin are essential.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) rating for HERAF1007G?

The HERAF1007G has a VRRM rating of 800 V, confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version I2105). This value defines the highest instantaneous reverse voltage the device can block repeatedly without breakdown and is specific to the HERAF1007G variant within the HERAF1001G–HERAF1008G family.

Does HERAF1007G have AEC-Q101 qualification?

The base HERAF1007G is not AEC-Q101 qualified; however, the variant HERAF1007GH is explicitly listed as AEC-Q101 qualified in the Ordering Information section. The "H" suffix denotes qualification, and both variants share identical electrical and thermal specifications except for the qualification status and associated test documentation.

What is the forward voltage (VF) of HERAF1007G at 10 A and 25°C?

The HERAF1007G exhibits a maximum forward voltage of 1.7 V under conditions of 10 A forward current and 25°C junction temperature, as specified in the Electrical Specifications table. This value is measured using a 0.3 ms pulse test and represents the upper limit for conduction loss calculation in thermal and efficiency modeling.

What is the reverse recovery time (trr) for HERAF1007G, and under what test conditions?

The HERAF1007G has a maximum reverse recovery time of 80 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, as defined in the Electrical Specifications table. This trr value applies specifically to HERAF1007G and distinguishes it from lower-voltage variants (e.g., HERAF1005G at 50 ns) due to process and doping optimizations.

Is the cathode terminal of HERAF1007G electrically isolated from the mounting tab?

Yes-the HERAF1007G uses an ITO-220AC package, where the metal tab is the cathode and is electrically isolated from the lead frame. This isolation is confirmed in the Package Outline Dimensions and Marking Diagram sections, enabling safe mounting to a common heatsink without shorting the cathode to other circuit nodes.