Taiwan Semiconductor Corporation HERAF1008G

Overview

HERAF1008G from Taiwan Semiconductor is a single-die, glass-passivated high-efficiency rectifier diode rated for 1000 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), optimized for switching-mode power supplies in industrial and automotive DC-DC converters.

For engineers reviewing the HERAF1008G datasheet, HERAF1008G pinout, HERAF1008G application, or HERAF1008G equivalent, key selection criteria include its 1.7 V forward voltage at 10 A/25°C, 60 pF junction capacitance, 80 ns reverse recovery time, ITO-220AC package thermal resistance of 2°C/W, and AEC-Q101 qualification option (HERAF1008GH).

Technical Context

The HERAF1008G employs a planar epitaxial silicon structure with glass passivation to achieve stable high-voltage blocking and low leakage. Its 1000 V VRRM rating enables use in 800 V bus systems with margin, while the 80 ns trr supports operation up to ~100 kHz in hard-switched topologies.

Thermally, the ITO-220AC package delivers 2°C/W junction-to-case resistance, allowing 10 A continuous conduction at ≤100°C case temperature. The device operates across –55°C to +150°C junction range and meets UL 94V-0 flammability and JESD201 Class 2 whisker requirements.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with isolated tab, matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH10R06DJF and VS-10ETX06-M3, the HERAF1008G uniquely supports 1000 V systems with validated surge robustness and thermal performance in ITO-220AC, making it the only option among the three for 800 V DC bus rectification without derating.

Availability

HERAF1008G is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive on-board chargers, and solar microinverter designs requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for HERAF1008G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, MOSFETs, and LED drivers.

The HERAF series targets high-efficiency, high-reliability rectification in demanding power conversion systems, with emphasis on automotive-grade variants, UL safety recognition, and thermal robustness in insulated packages.

FAQ

What is the maximum junction temperature rating for HERAF1008G?

The HERAF1008G has a maximum junction temperature (TJ MAX) of +150°C, verified across its full operating range from –55°C to +150°C. This rating enables reliable operation in high-ambient environments such as engine compartments or enclosed power enclosures when mounted with appropriate heatsinking per the 2°C/W RθJC specification.

Does HERAF1008G have automotive qualification?

The base HERAF1008G is not AEC-Q101 qualified, but the HERAF1008GH variant is explicitly certified to AEC-Q101. The "H" suffix denotes automotive-grade screening, including extended temperature cycling, high-temperature operating life, and biased HTRB testing - critical for on-board charger and traction inverter auxiliary power applications.

What is the forward voltage drop of HERAF1008G at rated current?

The HERAF1008G exhibits a typical forward voltage (VF) of 1.7 V at 10 A and 25°C junction temperature, measured under pulsed conditions (PW = 0.3 ms). At elevated temperatures (125°C), VF decreases slightly due to semiconductor physics, remaining within design margins for thermal-aware loss calculation.

How does the junction capacitance of HERAF1008G compare to lower-voltage variants?

The HERAF1008G has a typical junction capacitance (CJ) of 60 pF at 4 V reverse bias, lower than the 80 pF of HERAF1001G–1005G variants. This reduction reflects optimized die geometry for higher voltage, resulting in lower capacitive turn-on loss and reduced EMI generation during high-dV/dt switching events.

Is HERAF1008G compatible with lead-free reflow soldering processes?

Yes, HERAF1008G features matte tin-plated leads compliant with J-STD-002 for solderability, and its ITO-220AC package is rated for standard lead-free reflow profiles (peak ≤260°C). The UL 94V-0 molding compound and JESD201 Class 2 whisker resistance further ensure process compatibility and long-term interconnect reliability.