Taiwan Semiconductor Corporation HERAF1605G

Overview

HERAF1605G from Taiwan Semiconductor is a single-die, glass-passivated high-efficiency rectifier in ITO-220AC package, rated for 16 A average forward current, 400 V repetitive peak reverse voltage (VRRM), and 1.3 V typical forward voltage at 16 A and 25°C - used in freewheeling paths of automotive DC-DC converters.

For engineers reviewing the HERAF1605G datasheet, HERAF1605G pinout, HERAF1605G application, or HERAF1605G equivalent, key selection factors include its 400 V VRRM rating, 50 ns reverse recovery time, 2 °C/W junction-to-case thermal resistance, AEC-Q101 qualification option (HERAF1605GH), and ITO-220AC mounting compatibility with standard heatsinks.

Technical Context

The HERAF1605G is a fast-recovery, planar epitaxial silicon rectifier optimized for switching-mode power supplies. Its 50 ns trr and low 1.3 V VF at 16 A enable high-conversion efficiency in 48 V–400 V output stages, while the glass-passivated junction ensures stable operation under thermal cycling and humidity stress.

Designed for surface-mount-compatible through-hole assembly, it features matte tin-plated leads compliant with J-STD-002, UL 94V-0 molding compound, and meets JESD201 Class 2 whisker resistance - supporting automotive-grade reliability without requiring derating below 125°C junction temperature.

Key Specifications

Pinout & Package

Package: ITO-220AC - insulated TO-220 variant with electrically isolated tab, 3-terminal configuration, 0.56 N·m maximum mounting torque, and 1.70 g mass. Tab is cathode-connected; anode and cathode leads are formed for vertical PCB insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH1604D and VS-16EWH04FN-M3, the HERAF1605G offers the only ITO-220AC solution with AEC-Q101 qualification path (HERAF1605GH), balanced VF/trr trade-off, and UL recognition - making it optimal for space-constrained automotive and industrial converter designs requiring regulatory compliance.

Availability

HERAF1605G is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial UPS rectifier modules, and 48 V–400 V DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for HERAF1605G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs since 1979.

The HERAF1605G belongs to TSC's high-efficiency rectifier product line, engineered specifically for automotive-grade switching power conversion where reliability, thermal performance, and regulatory compliance are critical design requirements.

FAQ

What is the maximum repetitive peak reverse voltage (VRRM) rating for the HERAF1605G?

The HERAF1605G has a VRRM rating of 400 V, confirmed in the Absolute Maximum Ratings table of Taiwan Semiconductor's K2105 datasheet. This value defines the highest reverse voltage the device can block repeatedly without breakdown under normal operating conditions, making it suitable for 28 V and 48 V input systems with appropriate transient margin. The HERAF1605G is part of a family spanning 50 V to 600 V, with HERAF1605G specifically assigned to the 400 V grade.

Is the HERAF1605G qualified for automotive applications?

The base HERAF1605G is not AEC-Q101 qualified, but the HERAF1605GH variant - identical in all electrical and thermal specifications - is fully AEC-Q101 qualified per the ordering information note. This qualification covers temperature cycling, high-temperature reverse bias, and unbiased highly accelerated stress testing. Engineers specifying HERAF1605G for automotive use must select the 'H' suffix version to meet OEM power electronics requirements.

What is the forward voltage (VF) of the HERAF1605G at rated current and temperature?

The HERAF1605G exhibits a typical forward voltage of 1.3 V at 16 A and 25°C junction temperature, as specified in the Electrical Specifications table. At 125°C, VF decreases slightly due to semiconductor physics, but the datasheet does not provide a derated VF curve. This 1.3 V value directly determines conduction loss - approximately 20.8 W at full load - and is critical for thermal design of the HERAF1605G in high-density power supplies.

Does the HERAF1605G have a defined reverse recovery time (trr)?

Yes, the HERAF1605G has a maximum reverse recovery time of 50 ns under the test condition of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, as stated in the Electrical Specifications table. This parameter is measured using the circuit diagram shown in Figure 6 of the datasheet and reflects the device's ability to transition from conduction to blocking state - a key factor in minimizing switching losses and EMI in high-frequency converters using the HERAF1605G.

What package type is used for the HERAF1605G and how is it mounted?

The HERAF1605G uses the ITO-220AC package - an insulated variant of TO-220 with electrically isolated metal tab. It is mounted using two screws (or one central screw plus alignment pins) with a maximum torque of 0.56 N·m. The tab serves as the cathode and must be electrically isolated from the heatsink unless system grounding permits direct thermal contact. Lead-forming and soldering follow J-STD-002 standards for matte tin-plated terminals.