Taiwan Semiconductor Corporation HERAF1606G

Overview

HERAF1606G from Taiwan Semiconductor is a single-die, glass-passivated high-efficiency rectifier diode rated for 600 V repetitive peak reverse voltage (VRRM), 16 A average forward current (IF), and 250 A non-repetitive surge current (IFSM), used in freewheeling and switching-mode power supply output stages.

For engineers reviewing the HERAF1606G datasheet, HERAF1606G pinout, HERAF1606G application, or HERAF1606G equivalent, key selection criteria include its 1.7 V forward voltage at 16 A/25°C, 80 ns reverse recovery time, 110 pF junction capacitance, ITO-220AC package thermal resistance of 2°C/W, and AEC-Q101 qualification availability (HERAF1606GH variant).

Technical Context

The HERAF1606G implements a planar epitaxial silicon PN junction with glass passivation for enhanced moisture and contamination resistance. Its 600 V VRRM rating enables use in 400 V DC bus systems with safety margin, while the 1.7 V VF at full load reflects optimized doping and metallization for low conduction loss in high-voltage SMPS outputs.

Thermal performance is defined by a 2°C/W junction-to-case resistance and 150°C maximum junction temperature, supporting direct heatsink mounting via the ITO-220AC case tab. Reverse recovery behavior (trr = 80 ns) is characterized under IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A conditions, indicating suitability for 100–300 kHz switching topologies.

Key Specifications

Pinout & Package

Package: ITO-220AC - insulated TO-220 variant with electrically isolated metal tab, UL 94V-0 molding compound, matte tin-plated leads, and 0.56 N·m max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH1606D and VS-16EWH06FN-M3, the HERAF1606G delivers a balanced trade-off: moderate VF (1.7 V), industry-standard ITO-220AC footprint, and optional AEC-Q101 qualification-making it optimal for cost-sensitive industrial and automotive secondary-side rectification where thermal and layout constraints align.

Availability

HERAF1606G is available at Aetrix Electronics and suitable for DC–DC converters, switching inverters, and industrial AC–DC power supplies requiring stable component supply, long-lifecycle sourcing, and consistent parametric performance across production batches.

Supply support for HERAF1606G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete device manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The HERAF1606G belongs to TSC's high-efficiency rectifier product line, engineered for high-voltage, high-current switching power conversion with emphasis on reliability, thermal robustness, and qualification-readiness for demanding environments.

FAQ

What is the maximum junction temperature rating for the HERAF1606G?

The HERAF1606G has a maximum junction temperature (TJ MAX) of +150°C, validated per absolute maximum ratings in the official datasheet. This rating enables reliable operation in enclosed industrial power supplies and automotive under-hood applications when mounted on an appropriately sized heatsink with ≤2°C/W thermal resistance. Derating curves confirm 16 A IF is sustainable up to TC = 100°C.

Is the HERAF1606G pin-compatible with other devices in the HERAF16xxG family?

Yes, all HERAF16xxG variants-including HERAF1606G-share identical ITO-220AC packaging, pinout (anode/cathode/tab), and mechanical dimensions. Voltage rating differences (50–600 V) are implemented internally without affecting external connections, allowing drop-in substitution within the same thermal and layout constraints.

Does the HERAF1606G meet automotive qualification standards?

The standard HERAF1606G is not AEC-Q101 qualified, but the HERAF1606GH variant-identical in all electrical and thermal specifications-is explicitly qualified per AEC-Q101. The "H" suffix denotes qualification; both share the same marking code, package, and performance data, differing only in test documentation and traceability.

What is the reverse recovery time (trr) specification for the HERAF1606G?

The HERAF1606G has a reverse recovery time (trr) of 80 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per the manufacturer's electrical specifications table. This value is confirmed in the Characteristics Curves section (Fig.6) and supports efficient operation in 100–300 kHz switching converters without excessive switching loss or ringing.

How does the HERAF1606G's forward voltage compare across temperature?

The HERAF1606G's forward voltage decreases with rising junction temperature-typical VF drops from 1.7 V at 25°C to approximately 1.45 V at 125°C (per Fig.4 Typical Forward Characteristics). This negative temperature coefficient helps balance current sharing in parallel configurations and reduces thermal runaway risk in multi-diode arrays.