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Taiwan Semiconductor Corporation HERAF806G
- Part No.:
- HERAF806G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF806G.pdf
- Description:
- DIODE GEN PURP 600V 8A ITO220AC
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
HERAF806G from Taiwan Semiconductor is an AEC-Q101-qualified, glass-passivated, single-die high-efficiency rectifier in ITO-220AC package, rated for 600 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A surge capability (IFSM), used in automotive DC-DC converters and industrial switching inverters.
For engineers reviewing the HERAF806G datasheet, HERAF806G pinout, HERAF806G application, or HERAF806G equivalent, key selection factors include its 1.7 V forward voltage at 8 A/25°C, 80 ns reverse recovery time, 60 pF junction capacitance, 2 °C/W thermal resistance, and UL Recognized status (E-326243) for safety-critical power conversion designs.
Technical Context
This device operates as a unidirectional silicon rectifier with fast recovery characteristics optimized for high-frequency switching topologies. Its 600 V VRRM rating supports 420 V RMS input stages in off-line SMPS and automotive 48 V–400 V battery systems.
The ITO-220AC package enables direct heatsink mounting with ≤0.56 N·m torque, while glass passivation ensures stable performance across -55°C to +150°C junction temperature range and meets JESD201 Class 2 whisker resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports 420 V RMS AC input or 400 V DC bus in automotive traction inverters |
| IF | 8 A - continuous conduction mode operation in 100–300 W DC-DC stages |
| IFSM | 150 A - withstands short-duration load dumps and startup surges without failure |
| VF @ 8A/25°C | 1.7 V - limits conduction loss to ≤13.6 W at full rated current |
| trr | 80 ns - enables efficient operation up to ~100 kHz switching frequency |
| RθJC | 2 °C/W - allows ≥40 W power dissipation with 80°C case temperature rise |
| CJ @ 1 MHz | 60 pF - reduces capacitive switching losses and EMI in high-dv/dt environments |
Pinout & Package
ITO-220AC package: 3-terminal through-hole outline with isolated tab (cathode-connected), matte tin-plated leads compliant with J-STD-002, UL 94V-0 molding compound, and polarity marked on device body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input current entry point | Connected to low-side switch node or transformer secondary; requires PCB trace width ≥1.5 mm for 8 A |
| Cathode (Tab) | Output current exit / thermal path | Electrically and thermally connected to heatsink; must be insulated if floating ground required |
| Cathode (Lead 2) | Secondary cathode connection | Provides redundant current path and mechanical stability; soldered to ground plane or heatsink pad |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications per stress test requirements |
| Glass-passivated junction | Prevents moisture ingress and metallization corrosion under humid/high-temp conditions |
| UL Recognition E-326243 | Confirms compliance with UL 60747-4 for discrete semiconductor devices in end equipment |
| Halogen-free construction | Meets IEC 61249-2-21, supporting RoHS and WEEE-compliant manufacturing |
| Junction temp limit +150°C | Enables operation in engine bay or industrial enclosures without derating below 8 A |
Applications
| Automotive DC-DC Converters | Industrial Switching Inverters |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in EVs and HEVs. IC Role / Device Role / Timing Role: Output rectifier in synchronous or quasi-resonant flyback topology. Use Value: 1.7 V VF minimizes conduction loss at 8 A load; 80 ns trr suppresses ringing during MOSFET turn-off. | Use Scenario: DC link freewheeling in 3-phase motor drives operating at 400 V bus. IC Role / Device Role / Timing Role: Anti-parallel diode across IGBTs for reactive energy recirculation. Use Value: 150 A IFSM handles regenerative braking surges; 600 V VRRM covers 1.5× nominal bus voltage margin. |
| Solar Microinverters | Server PSU Secondary Side |
Use Scenario: Isolated output rectification in 250–300 W photovoltaic microinverter units. IC Role / Device Role / Timing Role: High-frequency rectifier in LLC resonant converter secondary. Use Value: 60 pF CJ reduces switching loss and EMI generation at 200–500 kHz operation. | Use Scenario: +12 V output rectification in 80 PLUS Titanium server power supplies. IC Role / Device Role / Timing Role: Main output diode in center-tapped forward or active clamp forward design. Use Value: 2 °C/W RθJC enables compact heatsinking with <10°C rise at full load, improving system power density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DJF | 600 V VRRM, 8 A IF, 1.75 V VF @ 8 A, TO-220AC package, non-AEC-Q101 | Lacks automotive qualification; lower thermal resistance (1.8 °C/W) but no UL recognition | Preferred for cost-sensitive industrial PSUs where AEC-Q101 is not mandated |
| VS-8EWH06FN-M3 | 600 V VRRM, 8 A IF, 1.65 V VF @ 8 A, TO-220AC, AEC-Q101 qualified, UL Recognized E316275 | Lower VF improves efficiency by ~3% at full load; identical thermal and surge specs | Best drop-in replacement when tighter VF tolerance or alternate UL file is acceptable |
Compared with HERAF806G, STTH8R06DJF offers slightly higher VF and no automotive qualification but lower thermal resistance, while VS-8EWH06FN-M3 matches AEC-Q101 and UL status with marginally better conduction efficiency-making it the closest functional alternative for automotive-grade designs requiring validation continuity.
Availability
HERAF806G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and solar microinverters requiring stable component supply with long-term lifecycle support and traceable sourcing.
Supply support for HERAF806G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and computing markets since 1979.
The HERAF801G–HERAF808G series was designed specifically for high-reliability, high-efficiency rectification in harsh-environment power conversion-emphasizing AEC-Q101 compliance, robust thermal performance, and UL safety certification.
FAQ
What is the maximum junction temperature rating for HERAF806G?
The HERAF806G has a maximum junction temperature (TJ MAX) of +150°C, verified across its full operating range from -55°C to +150°C. This rating enables reliable use in under-hood automotive environments and enclosed industrial power supplies without mandatory derating below 8 A at case temperatures up to 70°C, provided thermal resistance to ambient remains within design limits.
Is HERAF806G AEC-Q101 qualified?
Yes, HERAF806G is AEC-Q101 qualified when ordered as HERAF806GH (with "H" suffix). The standard HERAF806G variant is not AEC-Q101 certified. Engineers selecting HERAF806G for automotive applications must verify ordering code suffix and consult Taiwan Semiconductor's qualification report for HERAF806GH to confirm stress test compliance including HTGB, HTRB, and temperature cycling.
What is the forward voltage specification for HERAF806G at 8 A and 25°C?
The forward voltage (VF) for HERAF806G is specified as a maximum of 1.7 V at 8 A forward current and 25°C junction temperature, measured under pulse conditions (PW = 0.3 ms). At elevated temperatures (e.g., 125°C), VF decreases slightly due to negative temperature coefficient, but conduction loss remains predictable within thermal design margins.
Does HERAF806G have UL recognition?
Yes, HERAF806G carries UL Recognition under File #E-326243, confirming compliance with UL 60747-4 for discrete semiconductor devices. This applies to all variants in the HERAF801G–HERAF808G family, including HERAF806G, and supports end-equipment safety certification in North America and other UL-accepting regions.
What is the reverse recovery time (trr) of HERAF806G and how is it tested?
The reverse recovery time (trr) of HERAF806G is rated at a maximum of 80 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A using the test circuit defined in Figure 6 of the datasheet. This value reflects performance in high-frequency switching applications such as LLC resonant converters and ensures minimal switching loss and voltage overshoot during commutation.
HERAF806G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 600 V
- Capacitance @ Vr, F:
- 60pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF806G FAQ
1.How can I place an order for HERAF806G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF806G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF806G reliable?
The price and inventory of HERAF806G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF806G is usually 5 days.
3.What payment methods are accepted for HERAF806G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF806G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF806G?
HERAF806G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF806G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF806G?
For technical support, including HERAF806G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF806G requirements.
6.How does Aetrix verify that HERAF806G is sourced from the original manufacturer or authorized distributors?
All HERAF806G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF806G meets industry standards.
7.What is the process for return or replacement of HERAF806G?
All HERAF806G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF806G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF806G part is unused and in its original packaging.
Return procedure for HERAF806G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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