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Taiwan Semiconductor Corporation HERAF806G C0G
- Part No.:
- HERAF806G C0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF806G C0G.pdf
- Description:
- DIODE GEN PURP 600V 8A ITO220AC
- Quantity:
- Payment:
- Shipping:
Inventory:2,418
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Product details
Overview
HERAF806G from Taiwan Semiconductor is a glass-passivated, single-die, high-efficiency ultrafast rectifier in ITO-220AC package, rated for 600 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM); used in freewheeling and switching-mode DC/DC converters.
For engineers reviewing the HERAF806G datasheet, HERAF806G pinout, HERAF806G application, or HERAF806G equivalent, key selection factors include its 1.7 V max forward voltage at 8 A/25°C, 80 ns reverse recovery time, 60 pF junction capacitance at 1 MHz/4 V, 2 °C/W junction-to-case thermal resistance, and AEC-Q101 qualification option (HERAF806GH).
Technical Context
The HERAF806G employs an ultrafast recovery structure optimized for high-frequency switching topologies, with trr ≤ 80 ns under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A test conditions. Its glass-passivated junction ensures stable operation across –55°C to +150°C junction temperature range.
Thermally, the ITO-220AC package delivers RθJC = 2 °C/W, enabling efficient heat transfer to heatsinks in compact power supplies. The device supports UL Recognized File # E-326243 and meets RoHS and halogen-free (IEC 61249-2-21) requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Maximum repetitive reverse blocking voltage; defines usable input voltage headroom in boost/flyback designs |
| IF | 8 A - Continuous average forward current at TC = 100°C; sets steady-state power handling capacity |
| IFSM | 150 A - Non-repetitive surge rating (8.3 ms half-sine); withstands inrush and fault transients |
| VF (max) | 1.7 V @ 8 A, 25°C - Directly impacts conduction loss and thermal design in high-current paths |
| trr | 80 ns - Ultrafast recovery enables >100 kHz switching without excessive switching loss or EMI |
| CJ | 60 pF @ 1 MHz, VR = 4 V - Low junction capacitance minimizes capacitive coupling and dynamic losses |
| RθJC | 2 °C/W - Enables predictable thermal management with standard heatsink mounting torque (≤0.56 N·m) |
Pinout & Package
Package: ITO-220AC - Insulated TO-220 variant with isolated tab, UL 94V-0 molding compound, matte tin-plated leads, polarity marked on device body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to low-side switch node or transformer secondary in flyback/forward topologies |
| Cathode (Lead 2) | Forward current exit / reverse blocking terminal | Typically tied to output rail or ground return; carries full load current and must be routed with low-inductance layout |
| Tab (Isolated) | Thermal path only (electrically isolated) | Mounted to heatsink without electrical isolation barrier; enables direct thermal coupling while maintaining circuit separation |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures long-term reliability and moisture resistance in automotive and industrial environments |
| Ultrafast recovery (trr ≤ 80 ns) | Reduces switching losses and EMI generation in high-frequency SMPS above 100 kHz |
| Low VF (1.7 V max @ 8 A) | Lowers conduction loss by ~15% vs. standard FRDs with comparable VRRM, improving efficiency at full load |
| UL Recognized (E-326243) | Validates safety compliance for end-equipment certification in AC/DC and DC/DC power systems |
| AEC-Q101 qualified version available | Supports automotive-grade deployment in engine control, ADAS power rails, and infotainment DC/DC stages |
Applications
| DC/DC Boost Converter | Industrial Inverter Freewheeling |
|---|---|
Use Scenario: High-efficiency 48 V–12 V step-down converter in telecom power shelf with 200 kHz switching frequency. IC Role / Device Role / Timing Role: Output rectifier conducting during low-side MOSFET off-time; handles continuous 8 A load with minimal conduction loss. Use Value: 1.7 V VF and 80 ns trr reduce total power loss by ≥0.8 W vs. standard FRD alternatives, lowering heatsink requirements. | Use Scenario: Regenerative braking energy recapture in 3-phase motor drives using IGBT-based inverters. IC Role / Device Role / Timing Role: Freewheeling diode clamping inductive kickback during IGBT turn-off; sustains 600 V reverse bias with <10 µA leakage at 125°C. Use Value: 150 A IFSM and 2 °C/W RθJC allow reliable operation under repeated surge events without thermal runaway. |
| Solar Microinverter Output Stage | Automotive On-Board Charger (OBC) DC/DC |
Use Scenario: Isolated DC/AC stage in residential solar microinverters requiring high reliability over 25-year field life. IC Role / Device Role / Timing Role: Secondary-side synchronous rectification replacement in LLC resonant converter; blocks 600 V reverse voltage during dead-time. Use Value: Glass passivation and JESD201 Class 2 whisker resistance ensure long-term stability under thermal cycling and humidity exposure. | Use Scenario: 3.3 kW bidirectional OBC DC/DC stage converting 400 V battery to 14 V vehicle bus with AEC-Q101 compliance. IC Role / Device Role / Timing Role: Primary-side rectifier in phase-shifted full-bridge topology; operates continuously at TJ = 135°C under full load. Use Value: –55°C to +150°C operating range and AEC-Q101-qualified variant (HERAF806GH) meet automotive environmental stress requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DJF | Same VRRM (600 V), IF (8 A), but VF = 1.85 V (max), trr = 60 ns, RθJC = 2.5 °C/W | Higher VF increases conduction loss; lower trr benefits very high-frequency designs (>300 kHz) | Prefer HERAF806G where thermal resistance and VF are critical; STTH8R06DJF where faster recovery dominates |
| VS-8EWH06FN-M3 | VRRM = 600 V, IF = 8 A, VF = 1.75 V (max), trr = 75 ns, RθJC = 2.2 °C/W, AEC-Q101 qualified | Near-identical electrical specs; slightly higher VF and marginally worse thermal performance | HERAF806G offers better thermal efficiency and lower VF; VS-8EWH06FN-M3 preferred if dual-sourcing or specific distributor availability required |
Compared with STTH8R06DJF and VS-8EWH06FN-M3, the HERAF806G delivers the lowest VF (1.7 V) and best thermal resistance (2 °C/W) in its class, making it optimal for thermally constrained, high-efficiency 600 V rectification where conduction loss dominates system efficiency.
Availability
HERAF806G is available at Aetrix Electronics and suitable for DC/DC converters, industrial inverters, solar microinverters, and automotive on-board chargers requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.
Supply support for HERAF806G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, MOSFETs, and LED drivers.
The HERAF series targets high-efficiency, high-reliability power conversion in automotive, industrial, and renewable energy systems, with emphasis on ultrafast recovery, low VF, and robust packaging for harsh-environment operation.
FAQ
What is the maximum junction temperature rating for the HERAF806G?
The HERAF806G has a maximum junction temperature (TJ) rating of +150°C, with operational range from –55°C to +150°C. This allows reliable use in high-ambient environments such as enclosed power supplies or under-hood automotive applications when properly heatsinked per its 2 °C/W RθJC specification.
Does the HERAF806G have AEC-Q101 qualification?
The HERAF806G itself is not AEC-Q101 qualified, but its AEC-Q101-compliant variant HERAF806GH is available. The "H" suffix denotes qualification per AEC-Q101 stress test standard, including HTGB, TCT, and H3TRB, making HERAF806GH suitable for automotive power electronics where reliability validation is mandatory.
What is the reverse recovery time (trr) of the HERAF806G and how is it measured?
The HERAF806G has a maximum reverse recovery time (trr) of 80 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per JEDEC standards. This ultrafast trr enables efficient operation in high-frequency switching converters up to 300 kHz without significant switching loss penalties.
Can the HERAF806G replace standard FRD or SR diodes in existing designs?
Yes, the HERAF806G can replace standard fast recovery diodes (FRDs) or Schottky rectifiers in 600 V-class applications, provided layout accommodates its ITO-220AC footprint and thermal interface. Its 1.7 V VF is higher than Schottkys but lower than most FRDs, and its 80 ns trr improves switching behavior over conventional FRDs-making HERAF806G ideal for upgrading efficiency in legacy SMPS designs.
What is the junction capacitance (CJ) of the HERAF806G and why does it matter?
The HERAF806G exhibits a typical junction capacitance (CJ) of 60 pF at 1 MHz and VR = 4 V. Low CJ reduces displacement current during voltage transitions, minimizing EMI generation and gate drive loading in high-speed switching circuits-especially critical in resonant LLC and phase-shifted full-bridge topologies where diode capacitance directly affects timing and efficiency.
HERAF806G C0G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 600 V
- Capacitance @ Vr, F:
- 60pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF806G C0G FAQ
1.How can I place an order for HERAF806G C0G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF806G C0G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF806G C0G reliable?
The price and inventory of HERAF806G C0G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF806G C0G is usually 5 days.
3.What payment methods are accepted for HERAF806G C0G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF806G C0G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF806G C0G?
HERAF806G C0G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF806G C0G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF806G C0G?
For technical support, including HERAF806G C0G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF806G C0G requirements.
6.How does Aetrix verify that HERAF806G C0G is sourced from the original manufacturer or authorized distributors?
All HERAF806G C0G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF806G C0G meets industry standards.
7.What is the process for return or replacement of HERAF806G C0G?
All HERAF806G C0G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF806G C0G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF806G C0G part is unused and in its original packaging.
Return procedure for HERAF806G C0G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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