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Taiwan Semiconductor Corporation HERAF806GH

Part No.:
HERAF806GH
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
AetrixHERAF806GH.pdf
Description:
80NS, 8A, 600V, HIGH EFFICIENT R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

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Product details

Overview

HERAF806GH from Taiwan Semiconductor is an AEC-Q101-qualified, single-die, high-efficiency ultrafast rectifier in ITO-220AC package, rated for 600 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM); used in automotive DC-DC converters and industrial switching inverters.

For engineers reviewing the HERAF806GH datasheet, HERAF806GH pinout, HERAF806GH application, or HERAF806GH equivalent, key selection factors include its 1.7 V max forward voltage at 8 A/25°C, 80 ns reverse recovery time, 60 pF junction capacitance, 2 °C/W junction-to-case thermal resistance, and AEC-Q101 qualification for under-hood automotive power stages.

Technical Context

This device is a glass-passivated, single-die silicon ultrafast rectifier optimized for high-frequency switching applications. Its 600 V VRRM rating and 80 ns trr support operation in 100–500 kHz SMPS topologies with reduced switching losses and EMI.

The ITO-220AC package provides direct heatsink mounting via the cathode tab, enabling efficient thermal management in space-constrained automotive and industrial power supplies where TJ must remain ≤150°C under sustained 8 A load.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports input rectification or freewheeling in 400 V DC bus systems with 50% safety margin
IF (AV)8 A - continuous conduction mode current handling for mid-power DC-DC stages up to ~1 kW
IFSM (8.3 ms)150 A - withstands inrush and fault currents in automotive cold-crank and overload conditions
VF (max @ 8 A, 25°C)1.7 V - limits conduction loss to ≤13.6 W per device at full load, critical for thermal budget
trr (max)80 ns - enables stable operation in hard-switched topologies up to 300 kHz without excessive diode recovery loss
RθJC2 °C/W - allows ≥40 W power dissipation with ≤80°C temperature rise above heatsink, simplifying thermal design
CJ (1 MHz, VR = 4 V)60 pF - reduces capacitive coupling noise and EMI generation in high-dv/dt gate-drive or snubber circuits

Pinout & Package

Package: ITO-220AC - insulated TO-220 variant with electrically isolated metal tab (cathode), matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Input current entry pointSolderable lead for PCB connection; carries full forward current into die; not heatsink-mounted
Cathode (Tab)Output current exit / thermal pathIsolated metal tab serves as cathode terminal and primary thermal interface to heatsink; requires insulating washer if mounted to grounded chassis
NC / Not connectedNo internal connectionNo third terminal; two-terminal device - anode lead and cathode tab only

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications including engine control modules and ADAS power supplies
Glass passivated junctionEnhances long-term reliability under thermal cycling and humidity exposure in harsh environments
Ultrafast recovery (80 ns)Minimizes reverse recovery charge (Qrr) and associated switching losses in high-frequency converters
UL Recognized (E-326243)Meets safety requirements for end-equipment certification in industrial and transportation equipment
Halogen-free & RoHS compliantSupports environmental compliance for global automotive OEMs and industrial equipment manufacturers

Applications

Automotive DC-DC ConvertersIndustrial Switch-Mode Inverters

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck converter output stage, conducting during low-side switch off-time.

Use Value: HERAF806GH's 600 V rating accommodates transient spikes on 48 V bus; 80 ns trr prevents shoot-through risk with fast GaN FETs.

Use Scenario: Output rectification in 3-phase IGBT-based motor drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Ultrafast freewheeling diode across IGBT collector-emitter, clamping inductive kickback during turn-off.

Use Value: HERAF806GH's 150 A IFSM handles motor stall surges; 2 °C/W RθJC enables compact heatsinking in enclosed drive enclosures.

Server PSU Secondary SideRenewable Energy Charge Controllers

Use Scenario: OR-ing diode in redundant 12 V output rails of telecom/datacenter power supplies.

IC Role / Device Role / Timing Role: Unidirectional current valve preventing backfeed between parallel PSUs during fault or maintenance.

Use Value: HERAF806GH's 1.7 V VF ensures low conduction loss at 8 A, minimizing voltage drop and heat generation in high-current OR-ing paths.

Use Scenario: Battery charging path isolation in solar MPPT controllers interfacing 24–48 V PV arrays to 12/24 V lead-acid or LiFePO₄ batteries.

IC Role / Device Role / Timing Role: Reverse polarity and overvoltage protection diode placed between MPPT output and battery terminals.

Use Value: HERAF806GH's 600 V VRRM safely blocks array open-circuit voltage (up to ~500 V), while AEC-Q101 qualification ensures field longevity in outdoor installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Vishay VS-8EWH06FN-M3Same ITO-220AC package, 600 V VRRM, 8 A IF, but 1.55 V VF (typ) and 60 ns trr; not AEC-Q101 qualifiedLacks automotive qualification; suitable for industrial/commercial SMPS but not under-hood usePrefer HERAF806GH where AEC-Q101 compliance is mandatory; choose VS-8EWH06FN-M3 only if lower VF/trr outweigh qualification needs
ON Semiconductor MUR860EGITO-220AC, 600 V VRRM, 8 A IF, 1.75 V VF (max), 75 ns trr; AEC-Q101 qualified; RoHS/halogen-freeNearly identical specs; minor VF/trr variance within typical process spread; same thermal and mechanical footprintMUR860EG is a functionally aligned alternative with comparable automotive qualification and performance envelope

Compared with VS-8EWH06FN-M3 and MUR860EG, HERAF806GH delivers AEC-Q101 assurance with verified 80 ns trr and 1.7 V VF ceiling-critical for robustness in automotive transients-while maintaining identical ITO-220AC mounting and thermal interface for drop-in replacement in validated designs.

Availability

HERAF806GH is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and renewable energy charge controllers requiring stable component supply with AEC-Q101 traceability and long-lifecycle support.

Supply support for HERAF806GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, MOSFETs, and IGBTs.

The HERAF series was developed specifically for high-reliability, high-efficiency rectification in automotive and industrial switching power supplies, emphasizing AEC-Q101 compliance, ultrafast recovery, and thermally robust packaging.

FAQ

What is the maximum junction temperature rating for HERAF806GH?

The HERAF806GH has a maximum junction temperature (TJ) rating of +150°C, verified per AEC-Q101 stress testing. This allows operation in under-hood automotive environments and sealed industrial enclosures when thermal design maintains case temperature within limits using its 2 °C/W RθJC. Derating curves in the HERAF806GH datasheet define safe IF vs. TC boundaries.

Is HERAF806GH pin-compatible with other devices in the HERAF801G–HERAF808G family?

Yes, all HERAF801G through HERAF808G variants-including HERAF806GH-share identical ITO-220AC package dimensions, pinout (anode lead, isolated cathode tab), and mounting interface. Voltage rating differences (50–1000 V) do not affect mechanical or electrical connectivity; HERAF806GH can be substituted within the same footprint where 600 V VRRM meets system requirements.

Does HERAF806GH require a thermal pad or insulator when mounted to a heatsink?

Yes, HERAF806GH's cathode tab is electrically active and must be electrically isolated from the heatsink using a UL-certified insulating pad (e.g., mica or ceramic) and compatible thermal grease. The ITO-220AC package is designed for insulated mounting; direct metal-to-metal contact risks short-circuiting the cathode to chassis ground.

What does the "H" suffix in HERAF806GH signify?

The "H" suffix in HERAF806GH explicitly denotes AEC-Q101 qualification, confirmed by Taiwan Semiconductor's test reports and UL Recognition File #E-326243. It distinguishes this grade from standard HERAF806G, which shares identical electrical specs but lacks automotive-grade reliability validation and stress-test documentation.

How does HERAF806GH's junction capacitance impact high-frequency circuit performance?

HERAF806GH specifies 60 pF junction capacitance at 1 MHz and 4 V reverse bias-lower than earlier 801G–805G variants (80 pF). This reduced CJ minimizes displacement current during fast dv/dt transitions, lowering EMI generation and improving stability in >200 kHz switching converters and snubberless gate-drive circuits.

HERAF806GH Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C

HERAF806GH FAQ

1.How can I place an order for HERAF806GH through Aetrix?

Please submit a Request for Quotation (RFQ) for HERAF806GH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERAF806GH reliable?

The price and inventory of HERAF806GH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF806GH is usually 5 days.

3.What payment methods are accepted for HERAF806GH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF806GH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERAF806GH?

HERAF806GH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERAF806GH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERAF806GH?

For technical support, including HERAF806GH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF806GH requirements.

6.How does Aetrix verify that HERAF806GH is sourced from the original manufacturer or authorized distributors?

All HERAF806GH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF806GH meets industry standards.

7.What is the process for return or replacement of HERAF806GH?

All HERAF806GH units undergo pre-shipment inspection (PSI). If there is an issue with HERAF806GH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERAF806GH part is unused and in its original packaging.

Return procedure for HERAF806GH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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