Taiwan Semiconductor Corporation HERAF807G
- Part No.:
- HERAF807G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF807G.pdf
- Description:
- DIODE GEN PURP 800V 8A ITO220AC
- Quantity:
- Payment:

- Shipping:

Inventory:1,000
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Product details
Overview
HERAF807G from Taiwan Semiconductor is an AEC-Q101-qualified, glass-passivated single-die ultrafast rectifier in ITO-220AC package, rated for 800 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM). It delivers low forward voltage (1.7 V at 8 A, 25°C) and fast reverse recovery (80 ns), targeting high-efficiency DC/DC converters and switching inverters.
For engineers reviewing the HERAF807G datasheet, HERAF807G pinout, HERAF807G application, or HERAF807G equivalent, key selection criteria include its 800 V VRRM, 1.7 V VF at full load, 80 ns trr, thermal resistance of 2 °C/W (junction-to-case), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This device is a single-die, ultrafast recovery silicon rectifier with glass-passivated junction and matte tin-plated leads compliant with J-STD-002. Its 80 ns reverse recovery time and 60 pF junction capacitance at 1 MHz / 4 V support high-frequency switching up to several hundred kHz in hard-switched topologies.
The ITO-220AC package provides direct metal heatsink mounting via the case tab, enabling efficient thermal management with 2 °C/W RθJC. Operating junction temperature spans −55°C to +150°C, and it meets UL 94V-0 flammability and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 800 V - supports input stages in 400–600 V DC bus systems with 2× safety margin |
| IF | 8 A continuous - suitable for medium-power SMPS outputs up to ~100 W at 12 V |
| IFSM | 150 A (8.3 ms sine) - withstands startup surges and short-circuit transients |
| VF | 1.7 V @ 8 A, 25°C - reduces conduction loss vs. standard FRDs; enables >92% efficiency in 48 V output converters |
| trr | 80 ns - minimizes switching loss and EMI in 100–500 kHz converters |
| RθJC | 2 °C/W - allows direct heatsink mounting without thermal interface material for compact thermal design |
| Junction Temp | −55°C to +150°C - qualified for under-hood automotive environments and industrial enclosures |
Pinout & Package
Package: ITO-220AC - insulated TO-220 variant with electrically isolated metal tab (case = cathode), matte tin-plated leads, UL 94V-0 molding compound, and polarity marked on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input current entry point | Connected to switching node or transformer secondary; requires PCB copper pour for thermal dissipation |
| Cathode (Tab) | Output current exit / common reference | Electrically isolated metal tab serves as cathode terminal and primary thermal path to heatsink |
| NC (Lead 2) | No connection | Unused lead; must remain unconnected per datasheet mechanical drawing |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications requiring zero-defect reliability |
| Glass-passivated junction | Prevents moisture ingress and metallization corrosion, extending lifetime in humid/harsh environments |
| Ultrafast recovery (80 ns) | Reduces reverse recovery charge (Qrr) and associated switching losses in high-frequency converters |
| UL Recognized (E-326243) | Meets safety standards for end-equipment certification in industrial and consumer power supplies |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and EU RoHS Directive for environmentally regulated markets |
Applications
| Automotive DC/DC Converters | Industrial Switching Inverters |
|---|---|
Use Scenario: 12 V to 48 V bidirectional DC/DC converter in 48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: HERAF807G serves as the synchronous rectifier diode in the high-side leg, handling 8 A continuous current at 800 V blocking. Use Value: Its 1.7 V VF and 80 ns trr reduce conduction and switching losses, improving converter efficiency by ≥1.2% over standard FRDs. | Use Scenario: Output rectification stage in 3 kW solar microinverter with 600 V DC link. IC Role / Device Role / Timing Role: HERAF807G operates as freewheeling diode across IGBTs, clamping inductive kickback during turn-off. Use Value: 150 A IFSM rating ensures robustness against grid-spike-induced surge currents without derating. |
| Server PSU Secondary Side | EV Onboard Charger (OBC) PFC Stage |
Use Scenario: Output rectifier in 1.5 kW telecom server power supply with 54 V output. IC Role / Device Role / Timing Role: HERAF807G functions as the main output freewheeling diode in LLC resonant topology. Use Value: 2 °C/W RθJC enables direct heatsink mounting, reducing thermal stack-up and simplifying thermal design. | Use Scenario: Boost diode in 6.6 kW OBC active PFC front-end operating at 400 V DC bus. IC Role / Device Role / Timing Role: HERAF807G blocks reverse voltage during MOSFET conduction and conducts during inductor discharge phase. Use Value: 800 V VRRM provides 2× margin over 400 V nominal bus, ensuring long-term reliability under line transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DJF | 600 V VRRM, 8 A IF, 75 ns trr, TO-220AC package, no AEC-Q101 | Lacks automotive qualification; lower VRRM limits use to ≤300 V DC bus systems | Select when cost sensitivity outweighs 800 V requirement and AEC-Q101 is not mandated |
| IXYS MUR880E | 800 V VRRM, 8 A IF, 75 ns trr, TO-220AC, AEC-Q101 option available (MUR880E-13) | Same VRRM and IF; slightly faster trr but higher VF (1.85 V) | Choose when tighter trr tolerance is critical and 0.15 V higher VF is acceptable |
Compared with STTH8R06DJF and IXYS MUR880E, HERAF807G offers the optimal balance of 800 V rating, 1.7 V forward drop, AEC-Q101 compliance, and 2 °C/W thermal resistance-making it preferred for space-constrained, thermally demanding automotive and industrial converters where efficiency and reliability are co-prioritized.
Availability
HERAF807G is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial switching inverters, and EV onboard charger PFC stages requiring stable component supply and AEC-Q101-compliant rectification.
Supply support for HERAF807G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for automotive and industrial markets.
The HERAF series was developed specifically for high-reliability, high-efficiency rectification in automotive-grade power conversion systems, emphasizing ultrafast recovery, low VF, and robust thermal performance in ITO-220AC packaging.
FAQ
What is the maximum junction temperature rating for HERAF807G?
The HERAF807G has a maximum junction temperature (TJ) of +150°C and a minimum of −55°C. This wide operating range supports deployment in under-hood automotive environments and sealed industrial enclosures. The device's thermal resistance of 2 °C/W (RθJC) enables effective heat transfer to an external heatsink, allowing sustained operation near its thermal limit when properly mounted. HERAF807G maintains specified electrical parameters across this full range.
Is HERAF807G pin-compatible with other devices in the HERAF801G–HERAF808G family?
Yes, all HERAF801G through HERAF808G share identical ITO-220AC packaging, pinout, and mechanical footprint-including anode (lead 1), isolated cathode tab, and NC (lead 2). Voltage ratings differ only in internal die design; therefore, HERAF807G can be substituted within the same PCB layout for any other member of the family without modification, provided system-level VRRM and VF requirements are met.
Does HERAF807G meet automotive qualification standards?
Yes, HERAF807G is AEC-Q101 qualified when ordered with the "H" suffix (HERAF807GH). The base part HERAF807G is not automatically qualified; only the "H" variant undergoes full stress testing per AEC-Q101 Rev D. Applications requiring automotive grade must specify HERAF807GH and verify qualification status via Taiwan Semiconductor's official documentation or authorized distributor reports.
What is the reverse recovery time (trr) specification for HERAF807G?
The HERAF807G has a typical reverse recovery time (trr) of 80 ns under test conditions of IF = 0.5 A, IR = 1.0 A, and IRR = 0.25 A. This value is confirmed in the Electrical Specifications table on page 2 of the K2105 datasheet. The 80 ns trr enables efficient operation in switching frequencies up to 500 kHz while minimizing switching loss and EMI generation in hard-switched topologies.
How does the forward voltage (VF) of HERAF807G compare to lower-voltage variants in the same family?
HERAF807G specifies a maximum forward voltage of 1.7 V at 8 A and 25°C-matching HERAF806G and HERAF808G. In contrast, HERAF801G–HERAF805G have lower VF (1.0–1.3 V), reflecting trade-offs between breakdown voltage and on-state resistance. This higher VF is inherent to the 800 V die design and must be accounted for in thermal and efficiency calculations when using HERAF807G in place of lower-VRRM variants.
HERAF807G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 800 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 800 V
- Capacitance @ Vr, F:
- 60pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF807G FAQ
1.How can I place an order for HERAF807G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF807G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF807G reliable?
The price and inventory of HERAF807G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF807G is usually 5 days.
3.What payment methods are accepted for HERAF807G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF807G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF807G?
HERAF807G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF807G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF807G?
For technical support, including HERAF807G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF807G requirements.
6.How does Aetrix verify that HERAF807G is sourced from the original manufacturer or authorized distributors?
All HERAF807G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF807G meets industry standards.
7.What is the process for return or replacement of HERAF807G?
All HERAF807G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF807G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF807G part is unused and in its original packaging.
Return procedure for HERAF807G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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