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Taiwan Semiconductor Corporation HERAF807GH

Part No.:
HERAF807GH
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
AetrixHERAF807GH.pdf
Description:
80NS, 8A, 800V, HIGH EFFICIENT R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

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Product details

Overview

HERAF807GH from Taiwan Semiconductor is an AEC-Q101-qualified, single-die, high-efficiency ultrafast rectifier in ITO-220AC package, rated for 800 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), used in automotive-grade DC/DC converters and freewheeling paths.

For engineers reviewing the HERAF807GH datasheet, HERAF807GH pinout, HERAF807GH application, or HERAF807GH equivalent, key selection criteria include its 800 V VRRM rating, 1.7 V max forward voltage at 8 A and 25°C, 80 ns reverse recovery time, 60 pF junction capacitance, and AEC-Q101 qualification for under-hood automotive power systems.

Technical Context

This device is a glass-passivated, single-die silicon planar ultrafast rectifier optimized for high-voltage switching-mode power supplies. Its 80 ns trr and low 1.7 V VF enable reduced switching losses in high-frequency converters operating up to several hundred kHz.

The ITO-220AC package provides 2°C/W junction-to-case thermal resistance and supports direct heatsink mounting with ≤0.56 N·m torque. Polarity is marked on the case, and terminals are matte tin-plated per J-STD-002 for reliable solderability.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM800 V - supports input stages in 400–600 V DC bus systems with 25% safety margin
IF8 A continuous - delivers stable output in compact 100–300 W SMPS designs
IFSM150 A (8.3 ms half-sine) - withstands inrush and fault transients without failure
VF (max)1.7 V @ 8 A, 25°C - limits conduction loss to ≤13.6 W at full load
trr80 ns - enables operation up to ~500 kHz with minimal switching loss penalty
CJ60 pF @ 1 MHz, 4 V - reduces capacitive coupling noise in high-dv/dt environments
RθJC2°C/W - allows >6 W power dissipation with ≤12°C temperature rise above heatsink

Pinout & Package

ITO-220AC package: 3-terminal, single-anode/single-cathode configuration with isolated metal tab (cathode-connected). Mounting hole centered on tab; leads are straight, coplanar, matte tin-plated.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Input current entry pointConnected to high-side switch node or transformer secondary; requires PCB trace width ≥1.5 mm for 8 A
Cathode (Lead 2)Output current exit pointElectrically tied to metal tab; must be thermally and electrically connected to heatsink
Metal Tab (Cathode)Primary thermal path & electrical cathodeProvides low-inductance, low-resistance cathode return and 2°C/W RθJC; isolation voltage < 50 V unless insulated mount used

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood use including temperature cycling, HTRB, and ESD testing per stress test plan
Glass passivated junctionEliminates moisture-induced leakage degradation; enables >10-year field reliability in humid environments
UL Recognized (E-326243)Meets UL 94V-0 flammability and dielectric strength requirements for end-equipment safety certification
Halogen-free (IEC 61249-2-21)Complies with RoHS and automotive ELV directives; no brominated flame retardants in molding compound
JESD201 Class 2 whisker resistancePrevents tin whisker growth under thermal cycling, ensuring long-term solder joint integrity

Applications

Automotive DC/DC ConvertersIndustrial Switch-Mode Inverters

Use Scenario: Step-down conversion from 48 V or 400 V battery rails to 12 V or 5 V for ADAS ECUs and infotainment systems.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous or asynchronous buck topologies; handles reverse recovery during high-side FET turn-on.

Use Value: 80 ns trr minimizes shoot-through risk and reduces EMI generation compared to standard recovery diodes.

Use Scenario: Output rectification in three-phase motor drive inverters with 600–800 V DC link voltage.

IC Role / Device Role / Timing Role: High-voltage output stage clamp and freewheeling path; conducts during dead-time intervals.

Use Value: 800 V VRRM rating ensures safe operation with 1.2× derating margin against 650 V IGBT switching spikes.

Server Power Supply ORingRenewable Energy Charge Controllers

Use Scenario: ORing diode in redundant 12 V or 48 V server backplane power distribution.

IC Role / Device Role / Timing Role: Unidirectional current gate preventing reverse current flow between parallel PSUs.

Use Value: Low 1.7 V VF reduces power loss and heat generation versus Schottky alternatives at >40 V blocking.

Use Scenario: MPPT charge controller rectification in solar string inverters with 600–1000 V open-circuit voltage.

IC Role / Device Role / Timing Role: Input-stage unidirectional clamp protecting boost converter from reverse panel current.

Use Value: 150 A IFSM withstands lightning-induced surges common in outdoor PV installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH8R06DJF600 V VRRM, 8 A IF, 75 ns trr, TO-220AC package, no AEC-Q101Lacks automotive qualification; suitable for industrial but not automotive OEM designsSelect when AEC-Q101 is not required and 600 V rating suffices
VS-8EWH08FN-M3800 V VRRM, 8 A IF, 70 ns trr, TO-220AC, AEC-Q101 qualified, lower VF (1.55 V max)Higher cost; tighter VF tolerance improves efficiency in thermally constrained layoutsPrefer when lower conduction loss and identical qualification are critical

Compared with STTH8R06DJF, HERAF807GH offers higher voltage margin and automotive qualification; versus VS-8EWH08FN-M3, it trades slightly higher VF for broader availability and cost advantage in volume production.

Availability

HERAF807GH is available at Aetrix Electronics and suitable for automotive power modules, industrial motor drives, and renewable energy charge controllers requiring stable component supply with AEC-Q101 compliance and long-lifecycle support.

Supply support for HERAF807GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The HERAF series targets high-reliability, high-voltage rectification in automotive and industrial power conversion, emphasizing AEC-Q101 qualification, thermal robustness, and fast recovery for next-generation SMPS designs.

FAQ

What is the maximum junction temperature rating for HERAF807GH?

The HERAF807GH has a maximum junction temperature (TJ MAX) of +150°C, validated across its full operating range from –55°C to +150°C. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial enclosures. Derating curves in the datasheet define allowable IF vs. case temperature, and the 2°C/W RθJC supports thermal design up to 6 W dissipation with appropriate heatsinking. HERAF807GH must not exceed this limit during steady-state or transient conditions.

Is HERAF807GH pin-compatible with other devices in the HERAF80xG family?

Yes, all HERAF801G through HERAF808G variants-including HERAF807GH-share identical ITO-220AC packaging, pinout, and mechanical footprint. The only differences are VRRM rating (800 V for HERAF807GH), VF (1.7 V max), and trr (80 ns). This allows drop-in replacement within the same voltage class during design iteration or supply chain substitution, provided layout accommodates the specific voltage and thermal requirements of HERAF807GH.

Does HERAF807GH require a heatsink in typical 8 A operation?

Yes, HERAF807GH requires a heatsink for sustained 8 A operation. With 1.7 V VF and 2°C/W RθJC, conduction loss reaches ~13.6 W at full load, generating >27°C junction-to-case rise. Without heatsinking, case temperature would rapidly exceed safe limits. A minimum 25 cm² aluminum heatsink (natural convection) or forced-air cooling is recommended. Thermal interface material and mounting torque ≤0.56 N·m must be applied per datasheet guidelines to maintain HERAF807GH reliability.

What does the 'H' suffix in HERAF807GH signify?

The 'H' suffix in HERAF807GH indicates full AEC-Q101 qualification per Rev D test plan, covering stress tests including HTGB, H3TRB, TC, UHAST, and ESD. This distinguishes HERAF807GH from the non-H variant (HERAF807G), which lacks automotive qualification. HERAF807GH is certified for use in automotive powertrain, chassis, and body electronics where reliability under vibration, thermal cycling, and humidity is mandatory-making it suitable for engine control units and ADAS power supplies.

How does HERAF807GH's reverse recovery time compare to standard recovery rectifiers?

HERAF807GH has a specified trr of 80 ns, classifying it as an ultrafast rectifier. Standard recovery rectifiers typically exhibit trr > 500 ns, causing significant switching loss and EMI in high-frequency converters. At 80 ns, HERAF807GH enables clean commutation in buck, flyback, and LLC topologies operating above 100 kHz. This performance directly reduces power loss and simplifies EMI filtering versus standard parts-critical for meeting CISPR-25 Class 5 in automotive applications using HERAF807GH.

HERAF807GH Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 800 V
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C

HERAF807GH FAQ

1.How can I place an order for HERAF807GH through Aetrix?

Please submit a Request for Quotation (RFQ) for HERAF807GH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERAF807GH reliable?

The price and inventory of HERAF807GH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF807GH is usually 5 days.

3.What payment methods are accepted for HERAF807GH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF807GH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERAF807GH?

HERAF807GH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERAF807GH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERAF807GH?

For technical support, including HERAF807GH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF807GH requirements.

6.How does Aetrix verify that HERAF807GH is sourced from the original manufacturer or authorized distributors?

All HERAF807GH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF807GH meets industry standards.

7.What is the process for return or replacement of HERAF807GH?

All HERAF807GH units undergo pre-shipment inspection (PSI). If there is an issue with HERAF807GH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERAF807GH part is unused and in its original packaging.

Return procedure for HERAF807GH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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