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Taiwan Semiconductor Corporation HERAF808G

Part No.:
HERAF808G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
AetrixHERAF808G.pdf
Description:
DIODE GEN PURP 1KV 8A ITO220AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

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Product details

Overview

HERAF808G from Taiwan Semiconductor is an 8A, 1000V repetitive peak reverse voltage (VRRM) glass-passivated high-efficiency fast recovery rectifier in ITO-220AC package, featuring 1.7V forward voltage at 8A/25°C, 80ns reverse recovery time, and 60pF junction capacitance - deployed in high-voltage DC-DC converters and industrial inverters.

For engineers reviewing the HERAF808G datasheet, HERAF808G pinout, HERAF808G application, or HERAF808G equivalent, key selection criteria include VRRM=1000V, IF=8A, trr=80ns, VF=1.7V @ 8A, and ITO-220AC thermal resistance RθJC=2°C/W for high-reliability power conversion designs.

Technical Context

This single-die fast recovery rectifier uses planar epitaxial construction with glass passivation to achieve stable high-voltage blocking and low conduction loss. Its 1000V VRRM rating and 150A non-repetitive surge capability support robust operation in switching-mode power supplies under transient overloads.

The device delivers 80ns reverse recovery time at IF=0.5A/IR=1.0A with 0.25A reverse recovery current, enabling efficient high-frequency rectification up to ~100kHz. Junction-to-case thermal resistance of 2°C/W allows direct heatsink mounting for sustained 8A conduction at TJ ≤150°C.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1000 V - supports primary-side rectification in 800V AC-input SMPS and industrial HV DC links
IF8 A continuous - rated average forward current at TC=100°C, suitable for medium-power converters
IFSM150 A (8.3ms half-sine) - withstands inrush and short-circuit surge without failure
VF1.7 V @ 8A, 25°C - low conduction loss reduces heat generation in high-duty-cycle operation
trr80 ns - enables efficient switching at frequencies up to ~100 kHz with minimal switching loss
RθJC2 °C/W - allows direct mounting to heatsink for thermal management without thermal interface material
CJ60 pF @ 1MHz, VR=4V - low junction capacitance minimizes capacitive coupling and EMI in HV layouts

Pinout & Package

Package: ITO-220AC - insulated TO-220 variant with electrically isolated tab, UL 94V-0 molding compound, matte tin-plated leads, and 0.56 N·m max mounting torque.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Forward current entry pointConnected to input/high-side node; must be routed with low-inductance path for fast recovery
Cathode (Lead 2)Forward current exit pointConnected to output/low-side node; serves as main return path for 8A DC load current
Tab (Isolated)Thermal interface onlyElectrically isolated metal tab for heatsink attachment; no electrical connection to die

Key Features

FeatureDesign Value
Glass passivated chip junctionPrevents moisture ingress and surface leakage, ensuring long-term reliability in humid environments
AEC-Q101 qualified option (HERAF808GH)Validated for automotive under-hood applications including engine control and ADAS power stages
UL Recognized File #E-326243Meets safety standards for end-equipment certification in industrial and medical auxiliary power
Halogen-free per IEC 61249-2-21Complies with RoHS and environmental regulations for global electronics manufacturing
JESD 201 Class 2 whisker resistanceEliminates tin whisker growth risk in high-reliability systems operating >10 years

Applications

Industrial InvertersServer PSU Rectification

Use Scenario: Three-phase AC-DC front-end rectification in 400–800V DC bus inverters for motor drives and UPS systems.

IC Role / Device Role / Timing Role: High-voltage freewheeling and output rectification diode handling 8A continuous current at 1000V reverse stress.

Use Value: 80ns trr and 1.7V VF minimize switching losses and thermal rise during PWM commutation cycles.

Use Scenario: Secondary-side synchronous rectification replacement in 12V/48V server power supplies with high efficiency targets.

IC Role / Device Role / Timing Role: Fast recovery rectifier in LLC resonant converter outputs where low trr reduces body-diode conduction loss.

Use Value: 60pF CJ and 2°C/W RθJC enable compact layout and stable thermal performance at full 8A load.

Renewable Energy ConvertersEV Onboard Charger (OBC) PFC Stage

Use Scenario: Boost diode in photovoltaic string inverters interfacing 600–1000V DC strings to grid-tied inverters.

IC Role / Device Role / Timing Role: High-VRRM unidirectional current path sustaining 1000V reverse bias while conducting 8A average current.

Use Value: 150A IFSM handles lightning-induced surges and PV open-circuit transients without degradation.

Use Scenario: Boost rectifier in bidirectional OBC PFC stages requiring 1000V blocking for 400V battery integration.

IC Role / Device Role / Timing Role: Critical high-reliability rectifier in active PFC bridge where failure causes system shutdown.

Use Value: Glass passivation and AEC-Q101 qualification (HERAF808GH) ensure operational integrity across automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast recovery rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH8R06DJFVRRM=600V, VF=1.7V @ 8A, trr=60ns, TO-220AC packageLimited to ≤600V systems; lower surge rating (120A)Select when 600V rating suffices and faster trr is prioritized over voltage margin
IXYS MUR8100EVRRM=1000V, VF=1.75V @ 8A, trr=75ns, TO-220AC packageSlightly higher VF and lower IFSM (125A); no AEC-Q101 optionChoose for legacy design continuity where MUR8100E footprint is already validated

Compared with STTH8R06DJF and IXYS MUR8100E, HERAF808G provides the highest VRRM margin (1000V), best surge robustness (150A), and AEC-Q101 qualification path - critical for next-generation industrial and automotive HV power stages.

Availability

HERAF808G is available at Aetrix Electronics and suitable for industrial inverters, renewable energy converters, and EV onboard charger designs requiring stable component supply, long lifecycle assurance, and traceable sourcing.

Supply support for HERAF808G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and automotive markets since 1979.

The HERAF series targets high-efficiency, high-reliability rectification in demanding power conversion applications - emphasizing voltage scalability (50–1000V), thermal robustness, and AEC-Q101 readiness for mission-critical systems.

FAQ

What is the maximum junction temperature rating for HERAF808G?

The HERAF808G has a maximum junction temperature (TJ MAX) of +150°C, verified per absolute maximum ratings table. This allows continuous 8A operation at case temperatures up to 100°C when mounted on a heatsink with thermal resistance ≤50°C/W. Derating curves confirm safe operation down to -55°C storage temperature.

Does HERAF808G have AEC-Q101 qualification?

The standard HERAF808G is not AEC-Q101 qualified; however, the variant HERAF808GH is explicitly listed in the ordering information as AEC-Q101 qualified. Engineers requiring automotive-grade validation must specify HERAF808GH - identical electrically but with extended reliability testing per AEC-Q101 stress conditions.

What is the reverse recovery time (trr) specification for HERAF808G?

The HERAF808G has a typical reverse recovery time (trr) of 80 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per the electrical specifications table. This value applies specifically to HERAF806G through HERAF808G variants and supports high-frequency switching up to ~100 kHz with low switching loss.

Can HERAF808G replace HERAF805G in a design?

HERAF808G can replace HERAF805G mechanically and electrically in most cases, as both share ITO-220AC package, 8A IF rating, and identical pinout. However, HERAF808G has higher VRRM (1000V vs. 400V) and VF (1.7V vs. 1.3V), so verify that increased forward drop does not impact thermal budget in the target application.

What is the junction-to-case thermal resistance (RθJC) of HERAF808G?

The HERAF808G has a typical junction-to-case thermal resistance (RθJC) of 2°C/W, as specified in the Thermal Performance section. This value enables effective heat transfer to an external heatsink and supports sustained 8A conduction at TJ ≤150°C when case temperature is maintained ≤134°C.

HERAF808G Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 1000 V
Capacitance @ Vr, F:
60pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C

HERAF808G FAQ

1.How can I place an order for HERAF808G through Aetrix?

Please submit a Request for Quotation (RFQ) for HERAF808G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERAF808G reliable?

The price and inventory of HERAF808G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF808G is usually 5 days.

3.What payment methods are accepted for HERAF808G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF808G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERAF808G?

HERAF808G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERAF808G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERAF808G?

For technical support, including HERAF808G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF808G requirements.

6.How does Aetrix verify that HERAF808G is sourced from the original manufacturer or authorized distributors?

All HERAF808G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF808G meets industry standards.

7.What is the process for return or replacement of HERAF808G?

All HERAF808G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF808G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERAF808G part is unused and in its original packaging.

Return procedure for HERAF808G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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