Taiwan Semiconductor Corporation HERAF808GH

Overview

HERAF808GH from Taiwan Semiconductor is an AEC-Q101-qualified, single-die, high-efficiency ultrafast rectifier in ITO-220AC package, rated for 8 A average forward current, 1000 V repetitive peak reverse voltage, and 150 A surge current - used in automotive-grade DC/DC converters and freewheeling paths in high-voltage switching inverters.

For engineers reviewing the HERAF808GH datasheet, HERAF808GH pinout, HERAF808GH application, or HERAF808GH equivalent, key selection criteria include its 1.7 V max forward voltage at 8 A/25°C, 80 ns reverse recovery time, 60 pF junction capacitance, 2 °C/W junction-to-case thermal resistance, and UL Recognized (E-326243) compliance for safety-critical power conversion designs.

Technical Context

This device is a glass-passivated, single-die silicon ultrafast rectifier optimized for high-voltage, high-current switching applications. Its 1000 V V_RRM, 150 A I_FSM, and 80 ns trr support efficient energy recovery in hard-switched topologies where low reverse recovery charge and minimal switching loss are critical.

The ITO-220AC package provides robust thermal performance (R_θJC = 2 °C/W) and mechanical reliability per JESD201 Class 2 whisker testing. Matte tin-plated leads ensure solderability per J-STD-002, and polarity is marked on the case for unambiguous mounting in automotive power modules.

Key Specifications

Pinout & Package

Package: ITO-220AC - insulated TO-220 variant with electrically isolated tab, UL 94V-0 molding compound, and matte tin-plated leads. Mounting torque ≤0.56 N·m. Polarity marked on case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH8R06DJF and IXYS MUR8100E, HERAF808GH offers the highest V_RRM headroom (1000 V), lowest VF among AEC-Q101-qualified 1000 V rectifiers in ITO-220AC, and best thermal resistance - making it optimal for space-constrained, high-reliability automotive and industrial converters requiring zero derating at full rating.

Availability

HERAF808GH is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial switching inverters, and solar microinverter designs requiring stable component supply, long-lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for HERAF808GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The HERAF series targets high-reliability power conversion with AEC-Q101 qualification, UL recognition, and halogen-free packaging - designed specifically for next-generation EV power electronics, renewable energy interfaces, and ruggedized industrial SMPS.

FAQ

What is the maximum junction temperature rating for HERAF808GH?

The HERAF808GH has a maximum junction temperature (T_J) of +150°C, validated across its full operating range from –55°C to +150°C. This rating is maintained under all specified absolute maximum conditions, including 8 A continuous forward current and 150 A surge. Thermal design must ensure that actual T_J stays within this limit using the published R_θJC = 2 °C/W and appropriate heatsinking. HERAF808GH's glass passivation and JESD201 Class 2 whisker resistance further support reliability at elevated temperatures.

Is HERAF808GH pin-compatible with other devices in the HERAF80xG family?

Yes, all HERAF801G through HERAF808G variants share identical ITO-220AC packaging, pinout (anode, cathode, isolated tab), and mechanical dimensions. The "x" digit denotes V_RRM rating (50 V to 1000 V), and the "H" suffix in HERAF808GH indicates AEC-Q101 qualification - both electrical and mechanical interfaces remain consistent across the family. HERAF808GH can be substituted for lower-voltage HERAF80xG parts in layouts where 1000 V rating is required, provided thermal and VF trade-offs are evaluated.

Does HERAF808GH require a heatsink in typical 8 A operation?

Yes, HERAF808GH requires a heatsink for continuous 8 A operation at ambient temperatures above ~50°C. With R_θJC = 2 °C/W and typical V_F ≈ 1.55 V at 8 A/100°C, power dissipation exceeds 12.4 W - resulting in >25°C junction-to-case rise alone. A properly mounted heatsink (e.g., 10 °C/W total R_θJA) keeps T_J below 150°C. The isolated tab enables direct thermal attachment without electrical isolation hardware, simplifying thermal design in HERAF808GH-based systems.

What does the "H" suffix signify in HERAF808GH?

The "H" suffix in HERAF808GH explicitly denotes AEC-Q101 qualification per Rev G test requirements, including stress tests for high-temperature reverse bias (HTRB), temperature cycling, and electrostatic discharge. This distinguishes HERAF808GH from the non-qualified HERAF808G variant. Both share identical electrical specs and packaging, but only HERAF808GH is approved for automotive underhood applications. UL Recognition (E-326243) and halogen-free compliance are retained in the "H" version.

How does HERAF808GH's reverse recovery time compare to standard fast recovery diodes?

HERAF808GH's t_rr is rated at 80 ns maximum under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A conditions - significantly faster than standard fast recovery diodes (typically 250–500 ns). This ultrafast recovery reduces switching loss and voltage overshoot in high-frequency converters (≥100 kHz), especially in hard-switched topologies like forward or flyback. Compared to similarly rated 1000 V diodes, HERAF808GH achieves lower Q_rr due to optimized carrier lifetime control, directly improving efficiency in HERAF808GH-based power stages.