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Taiwan Semiconductor Corporation HERF1001G
- Part No.:
- HERF1001G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
HERF1001G.pdf
- Description:
- DIODE ARRAY GP 50V 10A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,206
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Product details
Overview
HERF1001G from Taiwan Semiconductor is a 10 A, 50 V repetitive peak reverse voltage (VRRM) high-efficiency fast recovery rectifier in ITO-220AB package, featuring 1.0 V typical forward voltage at 5 A and 25 °C, 50 ns reverse recovery time, and 60 pF junction capacitance - used in DC/DC converters and switching-mode power supplies.
For engineers reviewing the HERF1001G datasheet, HERF1001G pinout, HERF1001G application, or HERF1001G equivalent, key selection criteria include its 50 V VRRM, dual-die configuration, AEC-Q101 qualification option (HERF1001GH), UL recognition (E-326243), and thermal resistance of 3 °C/W junction-to-case.
Technical Context
The HERF1001G integrates two fast recovery diode dies in a single ITO-220AB thermally optimized package, enabling high-current freewheeling and output rectification with low conduction loss and minimal switching loss. Its 50 ns trr and 1.0 V VF support high-frequency operation up to several hundred kHz in SMPS topologies.
Designed for automotive-grade reliability when ordered as HERF1001GH, it meets JESD201 Class 2 whisker resistance and operates across –55 °C to +150 °C junction temperature range, with 125 A non-repetitive surge capability and UL 94V-0 molding compound.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 50 V - maximum repetitive reverse blocking voltage; defines safe operating limit in rectifier applications |
| IF | 10 A - continuous average forward current; determines heatsink sizing and thermal derating requirements |
| VF @ 5 A, 25 °C | 1.0 V typ - low conduction loss per diode; reduces power dissipation in high-current paths |
| trr | 50 ns max - fast reverse recovery; minimizes switching losses and EMI in high-frequency converters |
| CJ | 60 pF - junction capacitance per diode at 1 MHz, 4 V; impacts high-frequency snubbing and ringing behavior |
| RθJC | 3 °C/W - thermal resistance from junction to case; enables direct mounting to heatsink without thermal interface material |
| IFSM | 125 A - 8.3 ms half-sine surge rating; supports inrush and fault-current handling in power supplies |
Pinout & Package
Package: ITO-220AB - insulated thermally enhanced TO-220 variant with isolated tab, matte tin-plated leads, UL 94V-0 molding, and 0.56 N·m max mounting torque. Polarity marked on device body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 | Input terminal for first diode | Connects to high-side switching node or transformer secondary in center-tapped rectifiers |
| Cathode 1 | Output terminal for first diode | Common cathode connection point; ties to output rail or shared return path |
| Anode 2 | Input terminal for second diode | Enables dual-diode configuration for full-wave or dual-output rectification |
| Cathode 2 | Output terminal for second diode | Independent cathode allows separate output paths or parallel current sharing |
| Tab (isolated) | Thermal interface / mechanical ground | Electrically isolated metal tab for heatsink attachment; no electrical connection to internal dies |
Key Features
| Feature | Design Value |
|---|---|
| Fast recovery (trr ≤ 50 ns) | Reduces switching loss and improves efficiency in >100 kHz SMPS designs |
| Low VF (1.0 V typ @ 5 A) | Lowers conduction loss by ~15% vs. standard FRDs with comparable IF rating |
| Dual-die ITO-220AB package | Enables compact dual-rectifier implementation without discrete mounting or layout duplication |
| UL Recognized (E-326243) | Satisfies safety certification requirements for end-equipment without additional component-level testing |
| AEC-Q101 qualified option (HERF1001GH) | Validated for automotive under-hood environments including temperature cycling and mechanical shock |
Applications
| DC/DC Converters | Switching Inverters |
|---|---|
Use Scenario: Secondary-side synchronous or freewheeling rectification in isolated flyback or forward converters. IC Role / Device Role / Timing Role: Fast recovery rectifier providing low-loss unidirectional current path during switch off-time. Use Value: 50 ns trr and 1.0 V VF reduce switching loss and improve conversion efficiency above 200 kHz. | Use Scenario: Output stage rectification in solar microinverters and UPS inverters. IC Role / Device Role / Timing Role: High-current bidirectional blocking and unidirectional conduction in H-bridge or full-bridge outputs. Use Value: 125 A IFSM withstands grid-synchronization surges; dual-die layout simplifies PCB routing for split-phase outputs. |
| Freewheeling Diodes | Automotive Power Supplies |
Use Scenario: Inductive load flyback suppression in motor drivers and solenoid controllers. IC Role / Device Role / Timing Role: Freewheeling path for stored inductive energy during MOSFET turn-off. Use Value: Low VF limits voltage overshoot and reduces heat generation during repetitive 10 A flyback events. | Use Scenario: Input rectification and backup power conditioning in ADAS ECUs and infotainment systems. IC Role / Device Role / Timing Role: Primary AC/DC or DC/DC rectifier in AEC-Q101-compliant power modules. Use Value: HERF1001GH variant ensures reliability over –40 °C to +125 °C ambient with JESD201 Class 2 whisker resistance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | 600 V VRRM, 10 A IF, 65 ns trr, TO-220AC package (non-isolated tab) | Higher voltage rating but slower recovery; requires isolation hardware if tab grounding needed | Prefer HERF1001G where 50 V rating and faster trr are critical; STTH10R06DJF suits higher-voltage legacy designs |
| ON Semi MUR1050CT | 50 V VRRM, 10 A IF, 75 ns trr, TO-220AB package (isolated tab), no AEC-Q101 option | Same voltage/current class but slower recovery and no automotive qualification path | Select HERF1001G for new automotive or high-efficiency SMPS designs requiring <50 ns trr and AEC-Q101 availability |
Compared with STTH10R06DJF and MUR1050CT, the HERF1001G delivers superior high-frequency efficiency via 50 ns trr and lower VF, while its ITO-220AB package provides inherent electrical isolation and thermal performance unmatched by standard TO-220 variants.
Availability
HERF1001G is available at Aetrix Electronics and suitable for DC/DC converters, switching inverters, and automotive power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for HERF1001G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs.
The HERF1001G belongs to TSC's high-efficiency fast recovery rectifier product line, engineered for high-frequency switching power conversion in automotive, industrial, and renewable energy systems.
FAQ
What is the maximum junction temperature rating for the HERF1001G?
The HERF1001G has a maximum junction temperature (TJ) of +150 °C and a minimum of –55 °C. This wide operating range supports use in under-hood automotive environments and high-ambient industrial power supplies. Thermal design must ensure that actual junction temperature stays within this limit under worst-case load and ambient conditions, using the specified RθJC = 3 °C/W and appropriate heatsinking. The HERF1001G datasheet confirms this rating applies across all operating conditions.
Is the HERF1001G pin-compatible with standard TO-220AB rectifiers?
Yes - the HERF1001G uses the ITO-220AB package, which shares identical mechanical footprint and lead spacing with TO-220AB, enabling drop-in replacement in existing layouts. However, its electrically isolated metal tab differs from conductive-tab TO-220AB parts, so grounding schemes must be verified. The HERF1001G pinout remains consistent: Anode 1, Cathode 1, Anode 2, Cathode 2, and isolated tab - matching industry-standard dual-diode TO-220AB assignments.
Does the HERF1001G have automotive qualification?
The base HERF1001G is not AEC-Q101 qualified, but the HERF1001GH variant is fully AEC-Q101 qualified and marked with "H" suffix. HERF1001GH undergoes stress testing per AEC-Q101 including temperature cycling, humidity bias, and mechanical shock. For automotive applications requiring qualification, HERF1001GH must be specified; the HERF1001G remains suitable for industrial and commercial designs where qualification is not mandated.
What is the reverse recovery time (trr) specification for the HERF1001G?
The HERF1001G has a maximum reverse recovery time (trr) of 50 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This value is confirmed in the official Taiwan Semiconductor datasheet Version I2105 and reflects its fast recovery performance relative to standard rectifiers. Designers can rely on this trr to model switching losses and optimize snubber networks in high-frequency HERF1001G-based converters.
How does the HERF1001G's forward voltage compare to similar 10 A rectifiers?
The HERF1001G delivers 1.0 V typical forward voltage at 5 A and 25 °C - among the lowest in its class. Compared to alternatives like MUR1050CT (1.15 V typ) or STTH10R06DJF (1.25 V typ), this 0.15–0.25 V reduction lowers conduction loss by 10–20% at rated current. The HERF1001G achieves this via optimized epitaxial layer design and low-resistance metallization, directly improving thermal performance and system efficiency.
HERF1001G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
HERF1001G FAQ
1.How can I place an order for HERF1001G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERF1001G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERF1001G reliable?
The price and inventory of HERF1001G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1001G is usually 5 days.
3.What payment methods are accepted for HERF1001G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1001G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERF1001G?
HERF1001G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERF1001G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERF1001G?
For technical support, including HERF1001G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1001G requirements.
6.How does Aetrix verify that HERF1001G is sourced from the original manufacturer or authorized distributors?
All HERF1001G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1001G meets industry standards.
7.What is the process for return or replacement of HERF1001G?
All HERF1001G units undergo pre-shipment inspection (PSI). If there is an issue with HERF1001G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERF1001G part is unused and in its original packaging.
Return procedure for HERF1001G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HERF1001G Tags
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