Taiwan Semiconductor Corporation HERF1002G

Overview

HERF1002G from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified dual-die fast recovery rectifier in ITO-220AB package, rated for 100 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 125 A surge current (IFSM). It delivers low forward voltage (VF = 1.0 V at IF = 5 A, TJ = 25°C), 50 ns reverse recovery time (trr), and 60 pF junction capacitance per diode - optimized for DC/DC converters and switching-mode power supplies.

For engineers reviewing the HERF1002G datasheet, HERF1002G pinout, HERF1002G application, or HERF1002G equivalent, key selection criteria include its 100 V VRRM rating, dual-die configuration enabling parallel conduction paths, thermal resistance of 3 °C/W (junction-to-case), and compliance with UL 94V-0 and JESD201 Class 2 whisker standards.

Technical Context

The HERF1002G integrates two independent silicon epitaxial planar diodes in a single ITO-220AB thermally enhanced package, sharing common cathode connection. Its fast recovery (trr ≤ 50 ns) and low VF support high-frequency switching up to 100 kHz in hard-switched topologies.

Designed for automotive-grade reliability, it meets AEC-Q101 stress test requirements and operates across -55°C to +150°C junction temperature range. The device's 3 °C/W R_θJC enables direct heatsink mounting without thermal interface material under moderate load conditions.

Key Specifications

Pinout & Package

Package: ITO-220AB - thermally optimized 3-terminal molded plastic package with isolated tab, matte tin-plated leads, UL 94V-0 rated compound, and 0.56 N·m max mounting torque. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH10R06DJF and MUR1020CT, the HERF1002G uniquely combines 100 V rating, 50 ns trr, dual-die layout, and AEC-Q101 qualification - making it optimal for compact, automotive-grade 48 V power conversion where thermal coupling and reliability are prioritized over ultra-high voltage headroom.

Availability

HERF1002G is available at Aetrix Electronics and suitable for automotive power modules, industrial DC/DC converters, and BLDC motor drives requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for HERF1002G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The HERF100xG series was developed to deliver AEC-Q101-qualified, high-current fast recovery rectifiers with dual-die integration for next-generation 48 V mild-hybrid vehicle power systems and high-density industrial SMPS.

FAQ

What is the maximum junction temperature rating for HERF1002G?

The HERF1002G has a maximum junction temperature (TJ MAX) of +150°C, validated across its full operating range from -55°C to +150°C. This rating is maintained under specified thermal conditions including R_θJC = 3 °C/W and proper heatsinking. Derating curves in the official datasheet define allowable IF versus case temperature, ensuring reliable operation in automotive under-hood environments where ambient temperatures exceed 105°C.

Is HERF1002G pin-compatible with other parts in the HERF100xG family?

Yes, all HERF100xG variants - including HERF1001G through HERF1008G - share identical ITO-220AB package dimensions, pinout, and terminal configuration. The only differences are VRRM rating (50 V to 1000 V), VF, trr, and CJ values. This allows drop-in replacement across voltage grades without PCB redesign, provided thermal and electrical margins remain within specification for the selected variant.

Does HERF1002G require external snubbers in typical 100 kHz switching applications?

HERF1002G typically does not require external RC snubbers in well-designed 100 kHz buck or flyback converters due to its low 60 pF junction capacitance and 50 ns trr, which suppress voltage overshoot and ringing. However, snubber use remains dependent on circuit parasitics, layout, and switching voltage slew rate. For designs exceeding 200 V/ns dv/dt or operating above 200 kHz, empirical validation with oscilloscope measurement of anode-cathode ringing is recommended before finalizing HERF1002G placement.

What marking code identifies HERF1002G on the device body?

The HERF1002G is marked "HERF1002G" on the device surface, followed by date code (YWW format), factory code (F), and green compound indicator (G). This marking aligns with Taiwan Semiconductor's standard ITO-220AB labeling scheme and matches the ordering code exactly - confirming authenticity and voltage grade (100 V VRRM) without ambiguity during visual inspection or automated optical recognition.

How does the dual-die structure of HERF1002G impact thermal performance compared to single-die equivalents?

The dual-die structure of HERF1002G distributes power dissipation across two silicon dies sharing one thermal path to the tab, reducing localized hot spots and improving thermal uniformity. While R_θJC remains 3 °C/W (same as single-die ITO-220AB devices), the effective thermal mass increases, delaying transient temperature rise during pulsed loads. This enhances reliability in intermittent high-current applications like motor phase commutation, where single-die alternatives may experience accelerated degradation under repeated IFSM stress.