Taiwan Semiconductor Corporation HERF1003G

Overview

HERF1003G from Taiwan Semiconductor is a 10A, 200V high-efficiency fast recovery rectifier diode in ITO-220AB package, featuring 50 ns reverse recovery time, 1.0 V forward voltage at 5A/25°C, and 3°C/W junction-to-case thermal resistance. It serves as a primary output rectifier in DC-DC converters requiring low conduction loss and high surge robustness.

For engineers reviewing the HERF1003G datasheet, HERF1003G pinout, HERF1003G application, or HERF1003G equivalent, key selection criteria include its 200V V_RRM, dual-die configuration, AEC-Q101 qualification option (HERF1003GH), UL recognition (E-326243), and compatibility with high-frequency switching topologies up to 100 kHz.

Technical Context

This device implements a planar epitaxial silicon PN-junction structure optimized for fast recovery (t_rr = 50 ns) and low forward voltage (V_F = 1.0 V @ 5A). Its dual-die construction enables symmetrical current sharing and thermal distribution across the ITO-220AB copper tab.

The 200V repetitive peak reverse voltage (V_RRM) and 125A non-repetitive surge rating (I_FSM) support operation in hard-switched flyback and forward converters. Junction temperature range of −55°C to +150°C ensures reliability under automotive under-hood thermal cycling.

Key Specifications

Pinout & Package

Package: ITO-220AB - Insulated TO-220 variant with electrically isolated copper tab (dielectric strength ≥ 2500 V_{RMS), matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque.}

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH10R06DJF and MUR1020CT, HERF1003G delivers the lowest combination of V_F and t_rr at 200V rating, enabling higher efficiency in space-constrained 10A DC-DC outputs where thermal resistance (3°C/W) and UL recognition are critical.

Availability

HERF1003G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, switching mode inverter freewheeling, and automotive on-board charger (OBC) designs requiring stable component supply and long-term industrial availability.

Supply support for HERF1003G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, automotive, and consumer markets since 1979.

The HERF series targets high-efficiency power conversion applications, emphasizing fast recovery, low forward voltage, and automotive-grade reliability in insulated packages for demanding thermal and safety environments.

FAQ

What is the maximum junction temperature rating for HERF1003G?

The HERF1003G has a maximum junction temperature (T_J) of +150°C and a minimum of −55°C. This wide operating range supports use in automotive under-hood environments and industrial enclosures without forced cooling. Derating curves in the datasheet specify that continuous 10A current is only permissible below 75°C case temperature. HERF1003G must be mounted to an adequately sized heatsink to maintain T_J within limits during sustained operation.

Does HERF1003G have AEC-Q101 qualification?

The standard HERF1003G is not AEC-Q101 qualified; however, the HERF1003GH variant is explicitly qualified per AEC-Q101. The "H" suffix denotes automotive-grade screening including HTOL, temperature cycling, and mechanical shock tests. HERF1003GH is recommended for automotive powertrain and body electronics where qualification documentation and lot traceability are mandatory.

What is the reverse recovery time (t_rr) of HERF1003G and how is it measured?

The HERF1003G has a typical reverse recovery time (t_rr) of 50 ns, measured under conditions of I_F = 0.5A, I_R = 1.0A, and I_rr = 0.25A using a standardized half-sine test waveform. This value reflects the time required for minority carriers to clear after forward conduction ceases. HERF1003G's 50 ns t_rr enables reliable operation in switching power supplies operating up to 100 kHz without excessive switching loss or EMI.

Can HERF1003G be used as a direct replacement for HERF1002G in an existing design?

HERF1003G can replace HERF1002G only if the circuit's peak reverse voltage does not exceed 200V - HERF1002G is rated for 100V V_RRM, while HERF1003G is rated for 200V. All other key parameters (I_F, I_FSM, t_rr, V_F, package) are identical. No PCB changes are needed, but system-level voltage stress analysis must confirm the higher blocking rating is not misapplied in low-voltage contexts where lower V_F variants may offer better efficiency.

What is the thermal resistance from junction to case (R_θJC) for HERF1003G?

The HERF1003G has a typical junction-to-case thermal resistance (R_θJC) of 3°C/W, measured from the silicon die to the ITO-220AB copper tab surface. This low value enables direct mounting to aluminum heatsinks without thermal pads or paste in many 10A applications. For designs dissipating >10W, thermal simulation should verify that case temperature remains ≤75°C to sustain full 10A current rating. HERF1003G's R_θJC is 33% lower than industry-standard FRDs in similar packages.