Taiwan Semiconductor Corporation HERF1003GH

Overview

HERF1003GH from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified dual-die fast recovery rectifier in ITO-220AB package, rated for 200 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 125 A surge current (IFSM). It delivers low forward voltage (1.0 V at 5 A, 25°C) and fast reverse recovery (50 ns), enabling use in automotive-grade DC-DC converters and switching inverters.

For engineers reviewing the HERF1003GH datasheet, HERF1003GH pinout, HERF1003GH application, or HERF1003GH equivalent, key selection factors include its AEC-Q101 qualification, 200 V VRRM rating, 50 ns trr, 3 °C/W RθJC thermal resistance, and ITO-220AB mechanical compatibility with heatsink mounting.

Technical Context

This device integrates two independent silicon die in a single ITO-220AB power package, configured as a common-cathode dual diode. Its fast recovery time (50 ns) and low VF support high-frequency switching (>100 kHz) in hard-switched topologies without excessive conduction or switching loss.

Thermally, it features a junction-to-case resistance of 3 °C/W and operates across –55°C to +150°C junction temperature range. The matte tin-plated leads comply with J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Pinout & Package

Package: ITO-220AB - Insulated TO-220 variant with isolated metal tab, UL 94V-0 molding compound, and matte tin-plated leads. Mounting torque ≤ 0.56 N·m. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH10L06TV1 and MUR1020CT, HERF1003GH uniquely combines 200 V rating, 50 ns trr, AEC-Q101 qualification, and ITO-220AB isolation-enabling drop-in use in automotive-grade power stages where reliability, speed, and thermal safety are jointly critical.

Availability

HERF1003GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switch-mode inverters, and renewable energy charge controllers requiring stable component supply with AEC-Q101 assurance and long-term production continuity.

Supply support for HERF1003GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The HERF100xG series targets high-reliability power conversion systems requiring fast, efficient, and qualified rectification-designed specifically for automotive-grade DC-DC, onboard chargers, and industrial SMPS where thermal robustness and qualification compliance are mandatory.

FAQ

What is the maximum junction temperature rating for HERF1003GH?

The HERF1003GH has a maximum junction temperature (TJ MAX) of +150°C, validated across its full operating range from –55°C to +150°C. This rating supports sustained operation in under-hood automotive environments and high-ambient industrial enclosures when properly heatsinked. Thermal design must respect the 3 °C/W RθJC value to avoid exceeding TJ MAX under 10 A load conditions.

Is HERF1003GH pin-compatible with other devices in the HERF100xG family?

Yes, all HERF1001G through HERF1008G variants-including HERF1003GH-share identical ITO-220AB package dimensions, pinout, and mechanical mounting interface. Only VRRM, VF, and trr differ across the series; electrical substitution requires verification of voltage and timing requirements for the target application.

Does HERF1003GH require a heatsink in typical operation?

Yes, HERF1003GH requires external heatsinking for continuous 10 A operation. At 10 A and 1.0 V VF, power dissipation reaches ~10 W; with RθJC = 3 °C/W, even a modest 40°C temperature rise above ambient demands effective thermal coupling to a heatsink. Derating curves in the datasheet specify safe IF limits at given case temperatures.

What does the "H" suffix in HERF1003GH signify?

The "H" suffix in HERF1003GH explicitly denotes AEC-Q101 qualification-confirming that the device has passed accelerated stress testing for automotive power semiconductors, including high-temperature operating life (HTOL), temperature cycling (TCT), and highly accelerated stress test (HAST). This distinguishes HERF1003GH from non-H variants like HERF1003G.

How does HERF1003GH compare to standard FRDs in terms of reverse recovery performance?

HERF1003GH achieves 50 ns reverse recovery time (trr) at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A-significantly faster than legacy FRDs (typically 100–200 ns). This reduces Qrr and associated switching losses, enabling higher-frequency operation in DC-DC converters without sacrificing efficiency or generating excessive EMI, as confirmed in TSC's Characteristic Curves (Fig.6).