Taiwan Semiconductor Corporation HERF1006G

Overview

HERF1006G from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified dual-die ultrafast rectifier in ITO-220AB package, rated for 600 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 125 A surge capability (IFSM). It delivers low forward voltage (VF = 1.7 V at 5 A, 25°C), 40 pF junction capacitance, and 80 ns reverse recovery time - optimized for DC/DC converters and switching inverters in automotive and industrial power supplies.

For engineers reviewing the HERF1006G datasheet, HERF1006G pinout, HERF1006G application, or HERF1006G equivalent, key selection criteria include its 600 V VRRM rating, dual-die configuration, ITO-220AB thermal performance (RθJC = 3°C/W), AEC-Q101 qualification status, and verified 80 ns trr under standardized 0.5 A/1.0 A test conditions.

Technical Context

The HERF1006G integrates two independent silicon rectifier dies in a single ITO-220AB thermally enhanced package, enabling dual-channel freewheeling or bridge-leg operation without external paralleling. Its ultrafast recovery (trr = 80 ns) and low VF reduce switching losses in high-frequency SMPS topologies operating up to several hundred kHz.

Thermally, the device supports continuous 10 A conduction at case temperatures up to 110°C (derated from 150°C TJ max), with RθJC = 3°C/W enabling direct heatsink mounting. The matte tin-plated leads meet J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Pinout & Package

HERF1006G uses the ITO-220AB package: insulated thermally enhanced outline with three terminals (anode–cathode–anode), non-isolated metal tab electrically connected to cathode, and matte tin-plated leads compliant with J-STD-002.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH10L06S and IXYS MUR1060CT, HERF1006G uniquely combines dual-anode symmetry, AEC-Q101 qualification readiness (via HERF1006GH), and 80 ns trr with industry-leading 3°C/W thermal resistance - making it optimal for space- and reliability-constrained dual-path automotive and industrial power stages.

Availability

HERF1006G is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial motor drive freewheeling circuits, and renewable energy inverter output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HERF1006G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The HERF1006G belongs to TSC's high-voltage ultrafast rectifier product line, engineered specifically for high-frequency switching power conversion where low trr, low VF, and robust surge capability are mandatory - targeting next-generation EV chargers, server PSUs, and solar inverters.

FAQ

What is the maximum junction temperature rating for HERF1006G?

The HERF1006G has a maximum junction temperature (TJ MAX) of +150°C, validated across its full operating range from –55°C to +150°C. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures. Derating begins at case temperatures above 110°C, per the forward current derating curve in the official TSC datasheet. Thermal design must maintain TJ ≤ 150°C under worst-case IFSM and IF conditions.

Is HERF1006G pin-compatible with other parts in the HERF100xG family?

Yes, all HERF1001G through HERF1008G share identical ITO-220AB package dimensions, pinout, and terminal assignments - only VRRM and VF differ across the series. HERF1006G uses the same anode–cathode–anode terminal layout and mounting torque (0.56 N·m max) as HERF1001G–HERF1008G. No PCB redesign is needed when upgrading or downgrading voltage ratings within this family.

Does HERF1006G support AEC-Q101 qualification?

The HERF1006G itself is not AEC-Q101 qualified, but its drop-in variant HERF1006GH is fully AEC-Q101 qualified per Rev. I2105. HERF1006GH shares identical electrical specs, thermal performance, and mechanical form factor - differing only in extended reliability testing and traceability documentation. For automotive applications, specify HERF1006GH; for industrial use, HERF1006G remains valid.

What is the reverse recovery time test condition for HERF1006G?

HERF1006G reverse recovery time (trr) is measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, per JEDEC-standard test circuit shown in Figure 6 of the TSC datasheet. Under these conditions, trr is guaranteed ≤80 ns at TA = 25°C. Performance degrades predictably with rising junction temperature - at TJ = 125°C, trr increases to approximately 110 ns, as confirmed by TSC's published characteristics curves.

How does the dual-die structure of HERF1006G affect thermal management?

The dual-die structure in HERF1006G shares a single cathode tab and thermal path, resulting in a combined RθJC of 3°C/W - identical to single-die equivalents in the same package. This means total power dissipation (2 × VF × IF) raises junction temperature by only 3°C per watt above case temperature. Engineers must size heatsinks for total loss, not per die, and ensure uniform mounting pressure across the entire tab surface to avoid localized hot spots.