Taiwan Semiconductor Corporation HERF1007G

Overview

HERF1007G from Taiwan Semiconductor is a high-efficiency, AEC-Q101-qualified dual-die fast recovery rectifier in ITO-220AB package, rated for 800 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF), and 125 A surge current (IFSM). It delivers low forward voltage (VF = 1.7 V at 5 A, 25°C) and fast reverse recovery (trr = 80 ns), enabling use in high-frequency DC/DC converters and switching inverters.

For engineers reviewing the HERF1007G datasheet, HERF1007G pinout, HERF1007G application, or HERF1007G equivalent, key selection criteria include its 800 V VRRM rating, 1.7 V VF at 5 A, 80 ns trr, 3 °C/W RθJC thermal resistance, and ITO-220AB mechanical compatibility with heatsink mounting.

Technical Context

The HERF1007G integrates two independent silicon die in a single ITO-220AB package, configured as a common-cathode dual rectifier. Its fast recovery time (80 ns) and low junction capacitance (40 pF at 4 V, 1 MHz) support operation in high-frequency switching topologies up to several hundred kHz.

Thermally, it features a low junction-to-case resistance of 3 °C/W and operates across –55°C to +150°C junction temperature range. The device meets UL 94V-0 flammability, JESD201 Class 2 whisker resistance, and RoHS/halogen-free compliance per IEC 61249-2-21.

Key Specifications

Pinout & Package

Package: ITO-220AB - insulated thermoplastic case with three leads (anode1, anode2, cathode), matte tin-plated, UL 94V-0 rated, 1.82 g weight, max mounting torque 0.56 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast recovery rectifier applications.

Compared with STTH10R06DJF and IXYS MUR1080CT, the HERF1007G uniquely combines 800 V rating, dual common-cathode integration, 1.7 V VF, and AEC-Q101 availability-making it optimal for space-constrained, automotive-grade, or high-efficiency 800 V rectification where thermal performance and reliability are prioritized.

Availability

HERF1007G is available at Aetrix Electronics and suitable for DC/DC converters, switching mode inverters, and freewheeling applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for HERF1007G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS, MOSFETs, and ICs for industrial and automotive markets.

The HERF1007G belongs to TSC's high-efficiency fast recovery rectifier product line, engineered specifically for high-frequency, high-reliability power conversion in industrial SMPS, renewable energy inverters, and automotive on-board chargers.

FAQ

What is the maximum junction temperature rating for HERF1007G?

The HERF1007G has a maximum junction temperature (TJ MAX) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet Version I2105. This rating applies across the full operating range and supports reliable operation in high-ambient environments such as enclosed power supplies and under-hood automotive applications. Derating curves confirm usable current capacity down to –55°C storage temperature. HERF1007G must be thermally managed to maintain TJ ≤ 150°C under steady-state load.

Does HERF1007G have AEC-Q101 qualification?

The base HERF1007G is not AEC-Q101 qualified; however, the HERF1007GH variant-identical in all electrical and mechanical specifications except for qualification status-is fully AEC-Q101 certified per the ordering code table in the Taiwan Semiconductor datasheet. HERF1007GH undergoes additional stress testing including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing. For automotive applications, specify HERF1007GH-not HERF1007G-to ensure compliance.

What is the reverse recovery time (trr) of HERF1007G and how is it measured?

The HERF1007G has a typical reverse recovery time (trr) of 80 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, per the Electrical Specifications table in the Taiwan Semiconductor datasheet. This value is confirmed across the HERF1006G–HERF1008G group and reflects performance at 25°C ambient. The test uses a standardized half-sine waveform with defined di/dt and voltage rise rate, ensuring repeatability for high-frequency switching evaluation. HERF1007G's 80 ns trr directly impacts switching loss in hard-switched topologies.

Can HERF1007G replace HERF1006G or HERF1008G in a design?

No-HERF1007G is not a drop-in replacement for HERF1006G (600 V VRRM) or HERF1008G (1000 V VRRM), as each part has distinct voltage ratings and corresponding forward voltage and capacitance values. While all share identical package, pinout, and thermal specs, substituting across the series risks overvoltage failure (with HERF1006G) or unnecessary cost/loss penalty (with HERF1008G). HERF1007G is specifically optimized for 800 V systems; voltage selection must match actual circuit stress margins. Always verify VRRM derating per application.

What is the thermal resistance from junction to case (RθJC) for HERF1007G?

The HERF1007G has a typical junction-to-case thermal resistance (RθJC) of 3 °C/W, as specified in the Thermal Performance section of the Taiwan Semiconductor datasheet. This value is measured with the device mounted to a flat, bare copper heatsink using recommended torque (≤0.56 N·m) and thermal interface material. RθJC remains consistent across the HERF1001G–HERF1008G family and enables accurate thermal modeling for heatsink sizing. Actual system RθJA will depend on board layout, airflow, and heatsink design-but RθJC itself is a fixed, process-controlled parameter of HERF1007G.