Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation HERF1007GA

Part No.:
HERF1007GA
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Diode Arrays
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixHERF1007GA.pdf
Description:
DIODE ARRAY GP 800V 10A ITO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:920

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HERF1007GA from Taiwan Semiconductor is an AEC-Q101-qualified, high-efficiency 800 V repetitive peak reverse voltage (VRRM) ultrafast rectifier in ITO-220AB package, rated for 10 A average forward current (IF), 125 A non-repetitive surge (IFSM), and 80 ns reverse recovery time (trr). It serves as a freewheeling or output rectifier in high-frequency DC-DC converters.

For engineers reviewing the HERF1007GA datasheet, HERF1007GA pinout, HERF1007GA application, or HERF1007GA equivalent, key selection criteria include its 800 V VRRM, 1.7 V max forward voltage at 5 A, 40 pF junction capacitance, 3 °C/W junction-to-case thermal resistance, and dual-die ITO-220AB construction for automotive-grade power conversion.

Technical Context

The HERF1007GA employs ultrafast recovery silicon PN-junction rectification with dual-die configuration in a single ITO-220AB leadframe, enabling high-current handling while maintaining low conduction loss and fast switching transitions. Its trr ≤ 80 ns and CJ = 40 pF support operation in 100 kHz–500 kHz switching topologies.

Thermally, it delivers RθJC = 3 °C/W and operates across –55 °C to +150 °C junction temperature range, with UL 94V-0 molding compound and matte tin-plated leads compliant with J-STD-002 solderability standards.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM800 V - Maximum repetitive reverse blocking voltage; defines safe operating ceiling in high-voltage DC bus applications.
IF10 A - Continuous average forward current at case temperature ≤ 100 °C; supports sustained power delivery in SMPS outputs.
IFSM125 A - Peak non-repetitive surge current (8.3 ms half-sine); withstands inrush and fault transients without failure.
trr≤ 80 ns - Reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A; enables efficient high-frequency switching with low switching loss.
VF (max)1.7 V @ 5 A, 25 °C - Forward voltage drop per diode; directly determines conduction loss and thermal load in rectifier stage.
RθJC3 °C/W - Junction-to-case thermal resistance; allows precise heatsink sizing for thermal management in enclosed power modules.
CJ40 pF @ 1 MHz, 4 V - Junction capacitance per diode; impacts high-frequency EMI and snubber design in resonant converters.

Pinout & Package

Package: ITO-220AB - Insulated TO-220 variant with electrically isolated metal tab, 3-terminal through-hole outline, UL 94V-0 mold compound, matte tin-plated leads, and 0.56 N·m maximum mounting torque.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A1)Input terminal for forward conduction pathConnected to high-side switch node or transformer secondary; carries full load current during on-state.
Cathode (K1)Output terminal for forward conduction pathRoutes rectified current to output capacitor/filter; polarity-marked on device body.
Case / TabElectrically isolated thermal interfaceProvides mechanical mounting and heat transfer to heatsink; no electrical connection to internal dies (ITO isolation).

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive underhood applications including engine control and ADAS power supplies.
Ultrafast recovery (trr ≤ 80 ns)Reduces switching losses and EMI generation in >100 kHz DC-DC topologies such as LLC and phase-shifted full-bridge.
Dual-die configurationEnables parallel conduction paths within one package, improving current sharing and thermal distribution vs. single-die alternatives.
UL Recognized (E-326243)Confirms compliance with safety standards for end-equipment certification in industrial and transportation systems.
Halogen-free (IEC 61249-2-21)Meets environmental requirements for RoHS-compliant manufacturing and end-of-life recycling in global supply chains.

Applications

Automotive DC-DC ConvertersIndustrial Switch-Mode Power Supplies

Use Scenario: High-efficiency 12 V/48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Output synchronous rectifier replacing MOSFETs in secondary-side regulation, leveraging low VF and fast trr.

Use Value: Delivers <1.7 V conduction drop at 10 A, reducing thermal stress versus Schottky alternatives while maintaining 80 ns switching speed for 200 kHz operation.

Use Scenario: Primary-side clamp and secondary-side freewheeling in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Freewheeling diode across inductive loads and flyback snubber path in continuous-conduction-mode (CCM) PFC stages.

Use Value: Withstands 125 A surge peaks and operates up to 150 °C junction temperature, ensuring reliability during line surges and thermal cycling.

Renewable Energy InvertersMotor Drive Braking Circuits

Use Scenario: DC link clamping and auxiliary rectification in solar microinverters and string inverters.

IC Role / Device Role / Timing Role: High-voltage clamp diode absorbing inductive kickback from IGBT gate drivers and transformer leakage energy.

Use Value: 800 V VRRM and 3 °C/W RθJC enable direct mounting to aluminum heatsinks without isolation pads, simplifying thermal design.

Use Scenario: Regenerative braking energy recapture in BLDC motor drives for e-bikes and industrial actuators.

IC Role / Device Role / Timing Role: Bidirectional freewheeling path during PWM dead-time, returning kinetic energy to DC bus capacitors.

Use Value: Low 40 pF junction capacitance minimizes displacement current during rapid voltage transitions, reducing gate oscillation risk in adjacent MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH10R06DJF600 V VRRM, 10 A IF, trr = 65 ns, TO-220AC package (non-isolated tab)Limited to ≤600 V DC bus; requires external isolation for heatsink mountingSelect when lower VRRM suffices and cost sensitivity outweighs isolation requirement.
IXYS MUR1080CT800 V VRRM, 10 A IF, trr = 75 ns, TO-220AB package (isolated tab), but not AEC-Q101 qualifiedNot certified for automotive use; lacks UL recognition and halogen-free compliancePrefer for industrial-only designs where AEC-Q101 and UL are non-mandatory.

Compared with STTH10R06DJF and IXYS MUR1080CT, the HERF1007GA uniquely combines 800 V rating, AEC-Q101 qualification, UL recognition, and ITO-220AB isolation-making it the only option qualified for thermally demanding, safety-critical automotive DC-DC converters requiring no additional isolation hardware.

Availability

HERF1007GA is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switch-mode power supplies, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for HERF1007GA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and computing markets since 1979.

The HERF1007GA belongs to TSC's high-voltage ultrafast rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive-grade and industrial-grade switching power supplies.

FAQ

What is the maximum junction temperature rating for the HERF1007GA?

The HERF1007GA has a maximum junction temperature (TJ) of +150 °C, verified per absolute maximum ratings in the official datasheet. This rating applies across the full operating range and supports reliable operation in under-hood automotive environments and sealed industrial enclosures. Derating curves confirm usable current capacity down to 0 A at 150 °C case temperature. The HERF1007GA must be mounted with appropriate thermal interface material and heatsinking to maintain this limit in continuous operation.

Is the HERF1007GA pin-compatible with the HERF1008GA?

Yes, the HERF1007GA and HERF1008GA share identical ITO-220AB packaging, pinout, and mechanical dimensions - both feature Anode (A1), Cathode (K1), and electrically isolated tab terminals. The sole electrical difference is VRRM: 800 V for HERF1007GA versus 1000 V for HERF1008GA. Designers may substitute HERF1007GA for HERF1008GA only if system-level reverse voltage stress remains below 800 V; no PCB layout change is required for either part.

Does the HERF1007GA require a heatsink in standard operation?

Yes, the HERF1007GA requires a heatsink for operation above ~4 A average forward current at ambient temperatures ≥50 °C, due to its 3 °C/W RθJC and 1.7 V forward drop. At 10 A and 25 °C ambient, junction temperature exceeds 120 °C without thermal management. The ITO-220AB tab is designed for direct bolt-down to aluminum heatsinks; thermal interface material is recommended to minimize RθCS. The HERF1007GA datasheet provides derating curves to determine minimum heatsink size per application.

What does the 'GA' suffix indicate in HERF1007GA?

The 'GA' suffix in HERF1007GA denotes the base version - standard grade, non-AEC-Q101 qualified, RoHS-compliant, halogen-free, and UL Recognized (E-326243). The 'GAH' variant adds AEC-Q101 qualification. Both share identical electrical specs and package; only reliability testing scope differs. The HERF1007GA is intended for industrial and commercial applications where automotive qualification is not mandated, but full safety and environmental compliance is required.

How is reverse recovery time measured for the HERF1007GA?

The HERF1007GA reverse recovery time (trr) is measured per JEDEC standard test conditions: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A, with specified waveform definitions in Fig.6 of the datasheet. The value ≤ 80 ns reflects worst-case performance at 25 °C junction temperature and is validated across production lots. This parameter directly affects switching loss and EMI in hard-switched topologies; designers should verify actual trr under operating TJ and di/dt conditions using the HERF1007GA's published characteristics curves.

HERF1007GA Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io) (per Diode):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 800 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AB

HERF1007GA FAQ

1.How can I place an order for HERF1007GA through Aetrix?

Please submit a Request for Quotation (RFQ) for HERF1007GA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERF1007GA reliable?

The price and inventory of HERF1007GA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1007GA is usually 5 days.

3.What payment methods are accepted for HERF1007GA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1007GA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERF1007GA?

HERF1007GA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERF1007GA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERF1007GA?

For technical support, including HERF1007GA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1007GA requirements.

6.How does Aetrix verify that HERF1007GA is sourced from the original manufacturer or authorized distributors?

All HERF1007GA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1007GA meets industry standards.

7.What is the process for return or replacement of HERF1007GA?

All HERF1007GA units undergo pre-shipment inspection (PSI). If there is an issue with HERF1007GA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERF1007GA part is unused and in its original packaging.

Return procedure for HERF1007GA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HERF1007GA Tags

  • HERF1007GA
  • HERF1007GA PDF
  • HERF1007GA Datasheet
  • HERF1007GA Specifications
  • HERF1007GA Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation HERF1007GA
  • Buy HERF1007GA
  • HERF1007GA Price
  • HERF1007GA Distributor
  • HERF1007GA Supplier
  • HERF1007GA Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER