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Taiwan Semiconductor Corporation HERF1008GAH
- Part No.:
- HERF1008GAH
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
HERF1008GAH.pdf
- Description:
- DIODE GEN PURP 1KV 10A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,072
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Product details
Overview
HERF1008GAH from Taiwan Semiconductor is an AEC-Q101-qualified high-efficiency ultrafast rectifier diode in ITO-220AB package, rated for 10 A average forward current, 1000 V repetitive peak reverse voltage, and 125 A surge current. It features low forward voltage (1.7 V max at 5 A), 80 ns reverse recovery time, and dual-die configuration for enhanced thermal performance in automotive power conversion.
For engineers reviewing the HERF1008GAH datasheet, HERF1008GAH pinout, HERF1008GAH application, or HERF1008GAH equivalent, key selection factors include its 1000 V VRRM, AEC-Q101 qualification, 3 °C/W junction-to-case thermal resistance, and suitability for high-reliability DC-DC converters and freewheeling circuits requiring robust surge handling and low conduction loss.
Technical Context
This device implements a dual-die ultrafast recovery structure optimized for switching-mode power supplies operating above 20 kHz. Its 80 ns trr and low 40 pF junction capacitance per diode minimize switching losses and EMI generation during hard-commutation transitions.
The ITO-220AB package enables direct heatsink mounting with ≤0.56 N·m torque, supporting continuous 10 A operation up to 150 °C junction temperature. UL Recognized File #E-326243 and halogen-free compliance per IEC 61249-2-21 confirm safety and environmental readiness for automotive systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1000 V - supports primary-side rectification in 800 V-class AC/DC and DC/DC topologies without derating |
| IF | 10 A - delivers continuous output current in compact 1U server PSUs and onboard chargers |
| IFSM | 125 A - withstands inrush and fault currents in motor drive freewheeling paths |
| trr | 80 ns - reduces turn-off switching loss and dv/dt-induced shoot-through risk in synchronous rectifiers |
| RθJC | 3 °C/W - enables >8 W power dissipation with standard heatsink interface under 40 °C ambient |
| VF | 1.7 V max @ 5 A - lowers conduction loss by ~15% vs. standard FRD counterparts at typical operating point |
| Junction temp | −55 to +150 °C - meets extended temperature requirements for under-hood automotive electronics |
Pinout & Package
ITO-220AB package with three terminals: Anode (pin 1), Cathode (pin 2), and case-connected tab (pin 3, electrically tied to cathode). Matte tin-plated leads comply with J-STD-002 solderability; polarity marked on device body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Lead) | Anode | Connects to input/high-side node; must be routed with low-inductance trace for fast-switching applications |
| Pin 2 (Lead) | Cathode | Output/low-side connection; internally bonded to metal tab for thermal and electrical continuity |
| Tab (Case) | Cathode / Thermal Path | Electrically common with pin 2; requires insulated mounting hardware if cathode is not chassis-ground referenced |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and ADAS modules requiring zero-failure reliability over 15-year service life |
| Dual-die configuration | Improves current sharing and thermal distribution versus single-die equivalents, reducing hot-spot formation |
| UL Recognition #E-326243 | Confirms flammability compliance (UL 94V-0) and long-term insulation integrity in high-voltage isolation barriers |
| Halogen-free construction | Meets IEC 61249-2-21 for RoHS-compliant manufacturing and end-of-life recycling in EU and global markets |
| Low 40 pF junction capacitance | Minimizes capacitive coupling noise in high-frequency gate-drive feedback loops and snubber networks |
Applications
| On-Board Charger (OBC) | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-voltage battery-to-12 V bus conversion in EVs using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side ultrafast rectifier handling 400–800 V DC input with 100 kHz+ switching frequency. Use Value: 80 ns trr and 1000 V VRRM enable efficient energy transfer while suppressing voltage overshoot during diode commutation. | Use Scenario: Isolated auxiliary power supply for ADAS domain controllers and infotainment head units. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in flyback or forward converters. Use Value: 1.7 V VF max reduces conduction loss by ≥1.2 W per diode vs. legacy FRDs, improving thermal margin at 10 A load. |
| Industrial Motor Drive | Renewable Energy Inverter |
Use Scenario: Freewheeling path in IGBT-based 3-phase inverters driving HVAC compressors and pumps. IC Role / Device Role / Timing Role: Clamping diode absorbing inductive kickback during IGBT turn-off. Use Value: 125 A IFSM withstands repeated motor stall events without degradation; dual-die layout improves surge current distribution. | Use Scenario: Boost-stage rectification in solar microinverters interfacing 600–1000 V PV strings. IC Role / Device Role / Timing Role: High-voltage output rectifier in interleaved boost converters. Use Value: RθJC = 3 °C/W allows direct heatsink mounting to maintain <125 °C junction temp under full 10 A load at 65 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | 600 V VRRM, 75 ns trr, TO-220AC package, no AEC-Q101 rating | Lower voltage rating limits use to sub-600 V systems; lacks automotive qualification | Preferred where 600 V rating suffices and cost sensitivity outweighs AEC-Q101 requirement |
| IXYS MUR10100CT | 1000 V VRRM, 100 ns trr, TO-220AB package, no AEC-Q101, higher VF (1.9 V) | Compatible voltage rating but slower recovery and higher conduction loss; non-automotive grade | Acceptable for industrial inverters where AEC-Q101 is unnecessary and 20 ns trr penalty is tolerable |
Compared with STTH10R06DJF and IXYS MUR10100CT, HERF1008GAH uniquely combines 1000 V rating, AEC-Q101 qualification, and 80 ns trr-enabling direct use in automotive OBCs and high-reliability renewable energy systems without redesign or derating.
Availability
HERF1008GAH is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial motor drives, and renewable energy inverters requiring stable component supply with guaranteed AEC-Q101 compliance and long-lifecycle support.
Supply support for HERF1008GAH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and computing markets since 1979.
The HERF series targets high-efficiency, high-reliability power conversion in automotive electrification and industrial automation, emphasizing ultrafast recovery, AEC-Q101 qualification, and thermally robust packaging.
FAQ
What is the maximum junction temperature rating for HERF1008GAH?
The HERF1008GAH has a maximum junction temperature (TJ) of +150 °C, validated across its full operating range from −55 °C to +150 °C. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial settings. The device's 3 °C/W junction-to-case thermal resistance allows effective heat transfer to external heatsinks, ensuring HERF1008GAH maintains safe operating temperatures even at full 10 A load under sustained duty cycles.
Is HERF1008GAH pin-compatible with HERF1007GA?
Yes, HERF1008GAH and HERF1007GA share identical ITO-220AB packaging, pinout, and mechanical dimensions-including anode (pin 1), cathode (pin 2), and cathode-connected tab. Both devices use the same mounting torque (≤0.56 N·m) and thermal interface requirements. However, HERF1008GAH is rated for 1000 V VRRM, while HERF1007GA is rated for 800 V; substitution requires verification that system voltage stresses remain within the lower-rated device's specification.
Does HERF1008GAH meet automotive qualification standards?
Yes, HERF1008GAH is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code. This certification covers stress tests including HTGB, HTRB, TCT, and mechanical shock, validating its suitability for automotive powertrain and ADAS applications. The device also carries UL Recognition #E-326243 and complies with RoHS and halogen-free requirements per IEC 61249-2-21-key criteria for Tier 1 automotive supply chain acceptance.
What is the reverse recovery time (trr) specification for HERF1008GAH?
The HERF1008GAH has a maximum reverse recovery time (trr) of 80 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This ultrafast recovery characteristic minimizes switching losses and voltage spikes in high-frequency converters. The 80 ns trr is confirmed across temperature (25 °C to 125 °C) and supports stable operation in 100–500 kHz SMPS designs where HERF1008GAH serves as a primary or freewheeling rectifier.
How does the dual-die configuration of HERF1008GAH improve performance?
The dual-die configuration in HERF1008GAH distributes current and thermal load across two parallel semiconductor dies within a single ITO-220AB package. This design reduces localized heating, improves surge current handling (125 A IFSM), and enhances long-term reliability under cyclic thermal stress. Unlike single-die alternatives, HERF1008GAH achieves more uniform current sharing and lower effective thermal resistance-directly contributing to its 3 °C/W RθJC and extended lifetime in automotive and industrial power stages.
HERF1008GAH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1000 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 1000 V
- Capacitance @ Vr, F:
- 40pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERF1008GAH FAQ
1.How can I place an order for HERF1008GAH through Aetrix?
Please submit a Request for Quotation (RFQ) for HERF1008GAH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERF1008GAH reliable?
The price and inventory of HERF1008GAH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1008GAH is usually 5 days.
3.What payment methods are accepted for HERF1008GAH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1008GAH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERF1008GAH?
HERF1008GAH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERF1008GAH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERF1008GAH?
For technical support, including HERF1008GAH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1008GAH requirements.
6.How does Aetrix verify that HERF1008GAH is sourced from the original manufacturer or authorized distributors?
All HERF1008GAH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1008GAH meets industry standards.
7.What is the process for return or replacement of HERF1008GAH?
All HERF1008GAH units undergo pre-shipment inspection (PSI). If there is an issue with HERF1008GAH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERF1008GAH part is unused and in its original packaging.
Return procedure for HERF1008GAH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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