My Inquiry
My Account
Taiwan Semiconductor Corporation HERF1601G
- Part No.:
- HERF1601G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
HERF1601G.pdf
- Description:
- DIODE ARRAY GP 50V 16A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,863
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HERF1601G from Taiwan Semiconductor is a 16 A, 50 V repetitive peak reverse voltage (VRRM) high-efficiency fast recovery rectifier in ITO-220AB package with dual-die configuration, 1.0 V typical forward voltage at 8 A/25°C, 50 ns reverse recovery time, and 1.5 °C/W junction-to-case thermal resistance - used in DC-DC converters and switching-mode power supplies.
For engineers reviewing the HERF1601G datasheet, HERF1601G pinout, HERF1601G application, or HERF1601G equivalent, key selection criteria include its 50 V VRRM, 125 A surge rating, AEC-Q101 qualification eligibility (HERF1601GH variant), low conduction loss, and thermal performance suitable for high-density power conversion designs.
Technical Context
The HERF1601G integrates two independent silicon rectifier dies in a single ITO-220AB thermally enhanced package, enabling dual-channel freewheeling or bridge configurations. Its 50 V VRRM and 1.0 V VF (typ, 8 A, 25°C) target low-voltage, high-current switching applications where conduction loss minimization is critical.
With 50 ns reverse recovery time (trr), 1.5 °C/W RθJC, and 125 A IFSM (8.3 ms half-sine), the device supports high-frequency operation and transient robustness in synchronous rectification and flyback topologies without requiring external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 50 V - Maximum non-repetitive reverse blocking voltage; defines safe operating range in low-voltage DC-DC outputs. |
| IF | 16 A - Continuous average forward current; supports sustained 16 A load in heatsinked applications up to TC = 100°C. |
| VF | 1.0 V (typ, 8 A, 25°C) - Low conduction drop reduces power loss and thermal stress in high-current paths. |
| trr | 50 ns - Fast recovery enables efficient operation at ≥100 kHz switching frequencies with minimal switching loss. |
| RθJC | 1.5 °C/W - Enables direct mounting to heatsinks for thermal management in space-constrained power modules. |
| IFSM | 125 A (8.3 ms) - Withstands high inrush or fault currents without degradation in motor drives or PFC stages. |
| Junction Temp | -55°C to +150°C - Supports operation in automotive under-hood and industrial ambient environments. |
Pinout & Package
Package: ITO-220AB - Thermally optimized 3-terminal through-hole package with matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque. Polarity marked on case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 | Input terminal for first rectifier die | Accepts positive input in half-wave or common-cathode configuration; electrically isolated from Anode 2. |
| Cathode | Shared cathode node for both dies | Common output node enabling dual-anode, single-cathode topology (e.g., dual freewheeling diodes). |
| Anode 2 | Input terminal for second rectifier die | Enables independent control or parallel operation of two rectification paths within one footprint. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-die integration | Two independent 50 V/16 A rectifiers in one ITO-220AB package - reduces PCB area vs. discrete dual-diode solutions. |
| Fast recovery (50 ns) | Minimizes reverse recovery charge (Qrr) and associated switching losses in high-frequency SMPS. |
| Low VF (1.0 V typ) | Reduces conduction loss by ~15% versus standard FRDs at 8 A, improving efficiency in 12 V–48 V output rails. |
| 1.5 °C/W RθJC | Allows >10 W dissipation with ≤15°C rise above heatsink temperature - critical for compact power modules. |
| AEC-Q101 eligible | HERF1601GH variant meets stress test requirements for automotive power electronics (e.g., body control, ADAS power supplies). |
Applications
| DC-DC Converters | Switching Inverters |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V buck-derived converters for telecom and server PSUs. IC Role / Device Role / Timing Role: High-current freewheeling diode replacing MOSFETs in cost-sensitive designs; handles 16 A continuous forward conduction. Use Value: 1.0 V VF limits conduction loss to <16 W at full load, reducing heatsink size versus higher-VF alternatives. | Use Scenario: Output stage freewheeling path in 3-phase motor inverters for HVAC and industrial drives. IC Role / Device Role / Timing Role: Dual-anode configuration allows independent phase-leg clamping; shared cathode simplifies layout. Use Value: 125 A IFSM withstands motor startup surges; 50 ns trr prevents cross-conduction during PWM dead-time transitions. |
| Freewheeling Diodes | Power Factor Correction |
Use Scenario: Inductor flyback path in boost PFC pre-regulators for LED drivers and AC-DC adapters. IC Role / Device Role / Timing Role: Fast-recovery rectifier conducting during switch-off interval; dual-die supports interleaved designs. Use Value: 50 ns trr and low Qrr reduce EMI and improve THD compliance vs. standard rectifiers. | Use Scenario: Input bridge rectification in active PFC front-ends for industrial UPS systems. IC Role / Device Role / Timing Role: High-current, low-loss rectifier handling 16 A RMS input current with minimal thermal derating. Use Value: 1.5 °C/W RθJC enables direct heatsink mounting - eliminates thermal interface material in high-volume production. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1605D | 50 V VRRM, 16 A IF, 55 ns trr, TO-220AC package, single die | No dual-die configuration; lacks shared-cathode flexibility for multi-phase freewheeling | Prefer HERF1601G when dual-anode routing or space-constrained dual-path designs are required. |
| VS-16EWH05FN-M3 | 50 V VRRM, 16 A IF, 45 ns trr, D2PAK package, single die, AEC-Q101 qualified | Surface-mount only; no through-hole option; higher thermal resistance (RθJC = 2.0 °C/W) | Choose HERF1601G for through-hole reliability, lower RθJC, or legacy board compatibility. |
Compared with STTH1605D and VS-16EWH05FN-M3, the HERF1601G uniquely delivers dual-die integration in a through-hole ITO-220AB package with superior thermal resistance (1.5 °C/W), making it optimal for high-power density, serviceable, or thermally demanding rectification tasks.
Availability
HERF1601G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and freewheeling diode applications requiring stable component supply, long-term manufacturability, and automotive-grade traceability.
Supply support for HERF1601G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.
The HERF1601G belongs to TSC's high-efficiency rectifier product line, engineered specifically for low-VF, fast-recovery power conversion in space- and thermally constrained applications.
FAQ
What is the maximum repetitive peak reverse voltage (VRRM) of the HERF1601G?
The HERF1601G has a VRRM of 50 V, as confirmed in the Absolute Maximum Ratings table. This value is fixed for the HERF1601G variant and distinguishes it from other members of the HERF160xG family (e.g., HERF1602G = 100 V). Exceeding 50 V in reverse bias risks avalanche breakdown and permanent damage to the HERF1601G.
Does the HERF1601G have AEC-Q101 qualification?
The base HERF1601G is not AEC-Q101 qualified, but the HERF1601GH variant - indicated by the "H" suffix in the ordering code - is fully AEC-Q101 qualified per the Ordering Information section. Engineers requiring automotive-grade reliability must specify HERF1601GH, not HERF1601G, to ensure compliance with stress testing requirements.
How many diodes are integrated into the HERF1601G package?
The HERF1601G contains two independent silicon rectifier dies in a single ITO-220AB package, configured as dual-anode, single-cathode. This dual-die architecture is explicitly stated in the KEY PARAMETERS section and enables flexible use in freewheeling, bridge, or interleaved topologies without requiring two separate devices.
What is the typical forward voltage (VF) of the HERF1601G at rated current?
The HERF1601G exhibits a typical forward voltage of 1.0 V at 8 A and 25°C, per the Electrical Specifications table. This value applies to each die individually. At full-rated 16 A average current, VF rises due to self-heating but remains below 1.2 V under proper heatsinking - a key factor in minimizing conduction loss in the HERF1601G.
What thermal resistance does the HERF1601G offer from junction to case?
The HERF1601G has a typical junction-to-case thermal resistance (RθJC) of 1.5 °C/W, as specified in the THERMAL PERFORMANCE section. This low value is enabled by the ITO-220AB package's copper tab construction and direct die-to-tab bonding, allowing efficient heat transfer to an external heatsink and supporting higher power dissipation than standard TO-220 variants.
HERF1601G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 16A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
HERF1601G FAQ
1.How can I place an order for HERF1601G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERF1601G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERF1601G reliable?
The price and inventory of HERF1601G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1601G is usually 5 days.
3.What payment methods are accepted for HERF1601G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1601G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERF1601G?
HERF1601G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERF1601G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERF1601G?
For technical support, including HERF1601G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1601G requirements.
6.How does Aetrix verify that HERF1601G is sourced from the original manufacturer or authorized distributors?
All HERF1601G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1601G meets industry standards.
7.What is the process for return or replacement of HERF1601G?
All HERF1601G units undergo pre-shipment inspection (PSI). If there is an issue with HERF1601G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERF1601G part is unused and in its original packaging.
Return procedure for HERF1601G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HERF1601G Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
