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Taiwan Semiconductor Corporation HERF1603G

Part No.:
HERF1603G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Diode Arrays
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixHERF1603G.pdf
Description:
DIODE ARRAY GP 200V 16A ITO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,762

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Product details

Overview

HERF1603G from Taiwan Semiconductor is a 16A, 200V repetitive peak reverse voltage (VRRM) high-efficiency fast recovery rectifier in ITO-220AB package with dual-die configuration, 1.5°C/W junction-to-case thermal resistance, and 50ns reverse recovery time (trr), used in DC-DC converters and freewheeling paths.

For engineers reviewing the HERF1603G datasheet, HERF1603G pinout, HERF1603G application, or HERF1603G equivalent, key selection criteria include VRRM = 200V, IF = 16A, VF ≤ 1.0V at 8A/25°C, trr ≤ 50ns, and ITO-220AB mechanical compatibility with heatsink mounting.

Technical Context

This device integrates two independent silicon rectifier dies in a single ITO-220AB thermally optimized package, enabling dual-path or common-cathode configurations. Its 50ns trr and low VF support high-frequency switching up to 100kHz in SMPS topologies while maintaining low conduction and switching losses.

The HERF1603G operates across -55°C to +150°C junction temperature range, with 125A non-repetitive surge rating (IFSM) and UL Recognized File #E-326243 compliance. It meets JESD201 Class 2 whisker resistance and RoHS/halogen-free requirements per IEC 61249-2-21.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM200 V - Maximum repetitive reverse blocking voltage; defines usable input voltage range in bridge/freewheeling applications
IF16 A - Continuous forward current rating at TC = 100°C; determines heatsink sizing for steady-state operation
IFSM125 A - Peak non-repetitive surge current (8.3ms half-sine); supports inrush and transient overload handling
trr50 ns - Reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A; enables efficient operation in 50–100 kHz SMPS
VF≤1.0 V - Forward voltage drop per diode at IF = 8A, TJ = 25°C; directly impacts conduction loss and thermal design
RθJC1.5 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink without isolation pad penalty
CJ80 pF - Junction capacitance per diode at 1MHz, VR = 4V; affects high-frequency noise and EMI filter design

Pinout & Package

ITO-220AB package with three terminals: Anode 1, Cathode (common), Anode 2 - configured as dual independent diodes sharing cathode connection. Matte tin-plated leads meet J-STD-002 solderability; mounting torque ≤ 0.56 N·m.

Pin/TerminalCircuit RoleDesign Meaning
Anode 1Input terminal for first diodeAccepts positive voltage source in freewheeling or half-bridge leg; electrically isolated from Anode 2
CathodeCommon output nodeShared cathode connection enables dual-anode, single-output configuration; primary thermal path to case
Anode 2Input terminal for second diodeEnables independent current path routing; allows interleaved or phase-split operation in multi-phase converters

Key Features

FeatureDesign Value
Dual-die integration in ITO-220ABReduces board space vs. two discrete TO-220 devices; maintains same footprint while doubling functional density
50 ns reverse recovery timeMinimizes switching loss and di/dt-induced voltage spikes in hard-switched 60–100 kHz converters
1.0 V max forward voltage at 8ALowers conduction loss by ~15% vs. standard FRDs with VF ≥ 1.15V, improving efficiency in 12–48V output rails
UL Recognized (E-326243)Validates safety compliance for end-equipment certification without additional system-level testing overhead
Junction temp range: –55°C to +150°CSupports under-hood automotive and industrial ambient conditions without derating below –40°C ambient

Applications

DC-DC ConvertersSwitching Inverters

Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V buck-derived converters for telecom power supplies.

IC Role / Device Role / Timing Role: Fast-recovery rectifier conducting during transformer secondary voltage polarity; replaces Schottky in higher-VRRM designs.

Use Value: 50ns trr and 1.0V VF reduce switching loss and thermal stress versus legacy FRDs, enabling >94% efficiency at full load.

Use Scenario: Freewheeling path in 3-phase motor drive inverters operating at 8kHz PWM frequency.

IC Role / Device Role / Timing Role: Clamping diode across IGBT collector-emitter; recovers before next switching edge to prevent shoot-through.

Use Value: Dual-die layout allows independent anode routing to each phase leg, minimizing parasitic inductance in high-di/dt gate drive loops.

Industrial Power SuppliesAutomotive On-Board Chargers

Use Scenario: Output rectification in 3kW industrial AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-current output diode in center-tapped or full-wave configuration; handles 16A continuous DC output.

Use Value: 1.5°C/W RθJC enables direct bolt-down heatsinking, eliminating thermal interface material and reducing thermal resistance by ≥0.4°C/W.

Use Scenario: Boost diode in bidirectional OBC DC-DC stage converting 400V battery to 48V auxiliary rail.

IC Role / Device Role / Timing Role: High-VRRM (200V) boost rectifier subjected to 150V transients; rated for AEC-Q101 when ordered as HERF1603GH.

Use Value: UL recognition and halogen-free construction satisfy automotive Tier-1 safety and environmental compliance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH1602CWVRRM = 200V, IF = 16A, trr = 45ns, VF = 1.05V @ 8A, TO-247AC packageSingle-diode TO-247AC; requires two devices for dual-path use; higher RθJC (1.8°C/W)Preferred where PCB layout allows separate devices and lower trr is prioritized over thermal density
IXYS MBR16200CTVRRM = 200V, IF = 16A, VF = 0.95V @ 8A, trr = 60ns, TO-220AB packageCommon-cathode Schottky; lower VF but limited to TJ ≤ 125°C; not AEC-Q101 qualifiedSelected for ultra-low VF needs in non-automotive, <100°C ambient environments

Compared with STTH1602CW and MBR16200CT, the HERF1603G delivers superior thermal density (1.5°C/W) and automotive qualification path (via HERF1603GH), while balancing VF, trr, and ruggedness for cost-sensitive industrial and EV auxiliary power designs.

Availability

HERF1603G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for HERF1603G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The HERF1603G belongs to TSC's high-efficiency rectifier product line, engineered for high-frequency switching power conversion where low VF, fast trr, and robust thermal performance are critical in space-constrained designs.

FAQ

What is the maximum junction temperature rating for the HERF1603G?

The HERF1603G has a maximum junction temperature (TJ MAX) of +150°C, with operational capability from –55°C to +150°C. This rating allows reliable use in under-hood automotive environments and high-ambient industrial enclosures when mounted on an appropriately sized heatsink per its 1.5°C/W RθJC specification. The HERF1603G must be derated linearly above TC = 100°C per the forward current derating curve in the datasheet.

Is the HERF1603G pin-compatible with other devices in the HERF160xG family?

Yes, all HERF1601G through HERF1608G share identical ITO-220AB packaging, pinout, and terminal configuration - Anode 1, Cathode (common), Anode 2 - enabling drop-in replacement across the voltage range (50V to 1000V VRRM). Only the VRRM, VF, CJ, and trr values differ between variants; thermal and mechanical design remains unchanged for HERF1603G and siblings.

Does the HERF1603G support automotive qualification?

The HERF1603G itself is not AEC-Q101 qualified, but its variant HERF1603GH is explicitly listed as AEC-Q101 qualified in the ordering information. Customers requiring automotive-grade reliability must specify HERF1603GH - same electrical specs and package as HERF1603G, with added stress test validation per AEC-Q101 Rev D.

What is the reverse recovery time (trr) specification for the HERF1603G?

The HERF1603G has a maximum reverse recovery time (trr) of 50 ns, measured under conditions IF = 0.5A, IR = 1.0A, and Irr = 0.25A. This value is confirmed in the Electrical Specifications table for HERF1601G–HERF1605G group and applies directly to HERF1603G. It enables efficient operation in hard-switched converters up to 100 kHz without excessive switching loss or ringing.

How does the HERF1603G compare to standard FRD alternatives in terms of thermal performance?

The HERF1603G achieves a junction-to-case thermal resistance (RθJC) of 1.5°C/W - significantly lower than typical FRDs in TO-220AB (often ≥2.0°C/W). This 0.5°C/W improvement reduces die temperature rise by ~8°C at 16A, extending lifetime and allowing smaller heatsinks. Its ITO-220AB package also features matte tin-plated leads and UL 94V-0 molding compound, enhancing manufacturability and safety margin.

HERF1603G Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io) (per Diode):
16A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AB

HERF1603G FAQ

1.How can I place an order for HERF1603G through Aetrix?

Please submit a Request for Quotation (RFQ) for HERF1603G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERF1603G reliable?

The price and inventory of HERF1603G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1603G is usually 5 days.

3.What payment methods are accepted for HERF1603G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1603G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERF1603G?

HERF1603G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERF1603G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERF1603G?

For technical support, including HERF1603G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1603G requirements.

6.How does Aetrix verify that HERF1603G is sourced from the original manufacturer or authorized distributors?

All HERF1603G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1603G meets industry standards.

7.What is the process for return or replacement of HERF1603G?

All HERF1603G units undergo pre-shipment inspection (PSI). If there is an issue with HERF1603G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERF1603G part is unused and in its original packaging.

Return procedure for HERF1603G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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