Taiwan Semiconductor Corporation HERF1603G
- Part No.:
- HERF1603G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
HERF1603G.pdf
- Description:
- DIODE ARRAY GP 200V 16A ITO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,762
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HERF1603G from Taiwan Semiconductor is a 16A, 200V repetitive peak reverse voltage (VRRM) high-efficiency fast recovery rectifier in ITO-220AB package with dual-die configuration, 1.5°C/W junction-to-case thermal resistance, and 50ns reverse recovery time (trr), used in DC-DC converters and freewheeling paths.
For engineers reviewing the HERF1603G datasheet, HERF1603G pinout, HERF1603G application, or HERF1603G equivalent, key selection criteria include VRRM = 200V, IF = 16A, VF ≤ 1.0V at 8A/25°C, trr ≤ 50ns, and ITO-220AB mechanical compatibility with heatsink mounting.
Technical Context
This device integrates two independent silicon rectifier dies in a single ITO-220AB thermally optimized package, enabling dual-path or common-cathode configurations. Its 50ns trr and low VF support high-frequency switching up to 100kHz in SMPS topologies while maintaining low conduction and switching losses.
The HERF1603G operates across -55°C to +150°C junction temperature range, with 125A non-repetitive surge rating (IFSM) and UL Recognized File #E-326243 compliance. It meets JESD201 Class 2 whisker resistance and RoHS/halogen-free requirements per IEC 61249-2-21.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - Maximum repetitive reverse blocking voltage; defines usable input voltage range in bridge/freewheeling applications |
| IF | 16 A - Continuous forward current rating at TC = 100°C; determines heatsink sizing for steady-state operation |
| IFSM | 125 A - Peak non-repetitive surge current (8.3ms half-sine); supports inrush and transient overload handling |
| trr | 50 ns - Reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A; enables efficient operation in 50–100 kHz SMPS |
| VF | ≤1.0 V - Forward voltage drop per diode at IF = 8A, TJ = 25°C; directly impacts conduction loss and thermal design |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink without isolation pad penalty |
| CJ | 80 pF - Junction capacitance per diode at 1MHz, VR = 4V; affects high-frequency noise and EMI filter design |
Pinout & Package
ITO-220AB package with three terminals: Anode 1, Cathode (common), Anode 2 - configured as dual independent diodes sharing cathode connection. Matte tin-plated leads meet J-STD-002 solderability; mounting torque ≤ 0.56 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 | Input terminal for first diode | Accepts positive voltage source in freewheeling or half-bridge leg; electrically isolated from Anode 2 |
| Cathode | Common output node | Shared cathode connection enables dual-anode, single-output configuration; primary thermal path to case |
| Anode 2 | Input terminal for second diode | Enables independent current path routing; allows interleaved or phase-split operation in multi-phase converters |
Key Features
| Feature | Design Value |
|---|---|
| Dual-die integration in ITO-220AB | Reduces board space vs. two discrete TO-220 devices; maintains same footprint while doubling functional density |
| 50 ns reverse recovery time | Minimizes switching loss and di/dt-induced voltage spikes in hard-switched 60–100 kHz converters |
| 1.0 V max forward voltage at 8A | Lowers conduction loss by ~15% vs. standard FRDs with VF ≥ 1.15V, improving efficiency in 12–48V output rails |
| UL Recognized (E-326243) | Validates safety compliance for end-equipment certification without additional system-level testing overhead |
| Junction temp range: –55°C to +150°C | Supports under-hood automotive and industrial ambient conditions without derating below –40°C ambient |
Applications
| DC-DC Converters | Switching Inverters |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V buck-derived converters for telecom power supplies. IC Role / Device Role / Timing Role: Fast-recovery rectifier conducting during transformer secondary voltage polarity; replaces Schottky in higher-VRRM designs. Use Value: 50ns trr and 1.0V VF reduce switching loss and thermal stress versus legacy FRDs, enabling >94% efficiency at full load. | Use Scenario: Freewheeling path in 3-phase motor drive inverters operating at 8kHz PWM frequency. IC Role / Device Role / Timing Role: Clamping diode across IGBT collector-emitter; recovers before next switching edge to prevent shoot-through. Use Value: Dual-die layout allows independent anode routing to each phase leg, minimizing parasitic inductance in high-di/dt gate drive loops. |
| Industrial Power Supplies | Automotive On-Board Chargers |
Use Scenario: Output rectification in 3kW industrial AC-DC front-end with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-current output diode in center-tapped or full-wave configuration; handles 16A continuous DC output. Use Value: 1.5°C/W RθJC enables direct bolt-down heatsinking, eliminating thermal interface material and reducing thermal resistance by ≥0.4°C/W. | Use Scenario: Boost diode in bidirectional OBC DC-DC stage converting 400V battery to 48V auxiliary rail. IC Role / Device Role / Timing Role: High-VRRM (200V) boost rectifier subjected to 150V transients; rated for AEC-Q101 when ordered as HERF1603GH. Use Value: UL recognition and halogen-free construction satisfy automotive Tier-1 safety and environmental compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1602CW | VRRM = 200V, IF = 16A, trr = 45ns, VF = 1.05V @ 8A, TO-247AC package | Single-diode TO-247AC; requires two devices for dual-path use; higher RθJC (1.8°C/W) | Preferred where PCB layout allows separate devices and lower trr is prioritized over thermal density |
| IXYS MBR16200CT | VRRM = 200V, IF = 16A, VF = 0.95V @ 8A, trr = 60ns, TO-220AB package | Common-cathode Schottky; lower VF but limited to TJ ≤ 125°C; not AEC-Q101 qualified | Selected for ultra-low VF needs in non-automotive, <100°C ambient environments |
Compared with STTH1602CW and MBR16200CT, the HERF1603G delivers superior thermal density (1.5°C/W) and automotive qualification path (via HERF1603GH), while balancing VF, trr, and ruggedness for cost-sensitive industrial and EV auxiliary power designs.
Availability
HERF1603G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for HERF1603G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.
The HERF1603G belongs to TSC's high-efficiency rectifier product line, engineered for high-frequency switching power conversion where low VF, fast trr, and robust thermal performance are critical in space-constrained designs.
FAQ
What is the maximum junction temperature rating for the HERF1603G?
The HERF1603G has a maximum junction temperature (TJ MAX) of +150°C, with operational capability from –55°C to +150°C. This rating allows reliable use in under-hood automotive environments and high-ambient industrial enclosures when mounted on an appropriately sized heatsink per its 1.5°C/W RθJC specification. The HERF1603G must be derated linearly above TC = 100°C per the forward current derating curve in the datasheet.
Is the HERF1603G pin-compatible with other devices in the HERF160xG family?
Yes, all HERF1601G through HERF1608G share identical ITO-220AB packaging, pinout, and terminal configuration - Anode 1, Cathode (common), Anode 2 - enabling drop-in replacement across the voltage range (50V to 1000V VRRM). Only the VRRM, VF, CJ, and trr values differ between variants; thermal and mechanical design remains unchanged for HERF1603G and siblings.
Does the HERF1603G support automotive qualification?
The HERF1603G itself is not AEC-Q101 qualified, but its variant HERF1603GH is explicitly listed as AEC-Q101 qualified in the ordering information. Customers requiring automotive-grade reliability must specify HERF1603GH - same electrical specs and package as HERF1603G, with added stress test validation per AEC-Q101 Rev D.
What is the reverse recovery time (trr) specification for the HERF1603G?
The HERF1603G has a maximum reverse recovery time (trr) of 50 ns, measured under conditions IF = 0.5A, IR = 1.0A, and Irr = 0.25A. This value is confirmed in the Electrical Specifications table for HERF1601G–HERF1605G group and applies directly to HERF1603G. It enables efficient operation in hard-switched converters up to 100 kHz without excessive switching loss or ringing.
How does the HERF1603G compare to standard FRD alternatives in terms of thermal performance?
The HERF1603G achieves a junction-to-case thermal resistance (RθJC) of 1.5°C/W - significantly lower than typical FRDs in TO-220AB (often ≥2.0°C/W). This 0.5°C/W improvement reduces die temperature rise by ~8°C at 16A, extending lifetime and allowing smaller heatsinks. Its ITO-220AB package also features matte tin-plated leads and UL 94V-0 molding compound, enhancing manufacturability and safety margin.
HERF1603G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io) (per Diode):
- 16A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 200 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
HERF1603G FAQ
1.How can I place an order for HERF1603G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERF1603G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERF1603G reliable?
The price and inventory of HERF1603G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1603G is usually 5 days.
3.What payment methods are accepted for HERF1603G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1603G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERF1603G?
HERF1603G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERF1603G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERF1603G?
For technical support, including HERF1603G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1603G requirements.
6.How does Aetrix verify that HERF1603G is sourced from the original manufacturer or authorized distributors?
All HERF1603G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1603G meets industry standards.
7.What is the process for return or replacement of HERF1603G?
All HERF1603G units undergo pre-shipment inspection (PSI). If there is an issue with HERF1603G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERF1603G part is unused and in its original packaging.
Return procedure for HERF1603G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HERF1603G Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

