Taiwan Semiconductor Corporation HERF1606G
- Part No.:
- HERF1606G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Diode Arrays
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
HERF1606G.pdf
- Description:
- DIODE ARRAY GP 600V 16A ITO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,102
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HERF1606G from Taiwan Semiconductor is a 16A, 600V repetitive peak reverse voltage (VRRM), ultra-fast recovery rectifier in ITO-220AB package with dual-die configuration, 1.7V max forward voltage at 8A/25°C, 80ns reverse recovery time, and 125A surge capability - used in high-efficiency DC-DC converters and switching inverters.
For engineers reviewing the HERF1606G datasheet, HERF1606G pinout, HERF1606G application, or HERF1606G equivalent, key selection criteria include VRRM = 600V, VF ≤ 1.7V @ 8A, trr = 80ns, RθJC = 1.5°C/W, and AEC-Q101 qualification availability (HERF1606GH variant).
Technical Context
The HERF1606G integrates two independent high-voltage silicon rectifier dies in a single ITO-220AB thermally optimized package, enabling dual-diode configurations without external paralleling. Its 600V VRRM rating and 80ns trr support operation in 100–500kHz switching topologies with low switching loss.
Thermal performance is defined by a junction-to-case resistance of 1.5°C/W and a maximum junction temperature of +150°C, allowing sustained 16A conduction under forced-air or heatsink-mounted conditions per JEDEC JESD201 Class 2 whisker compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports DC bus voltages up to 424V RMS in bridge rectification or 600V clamp/snubber circuits |
| IF | 16 A - continuous forward current rating at TC = 100°C, suitable for high-power SMPS output stages |
| IFSM | 125 A - non-repetitive surge rating for 8.3ms half-sine, enabling robust startup and fault tolerance |
| VF | ≤1.7 V @ IF = 8A, TJ = 25°C - low conduction loss critical for efficiency in high-current DC-DC secondaries |
| trr | ≤80 ns - ultra-fast recovery minimizes switching losses and EMI in hard-switched converters |
| RθJC | 1.5 °C/W - enables thermal design with standard heatsinks for 16A operation at <100°C case temperature |
| CJ | 50 pF @ 1MHz, VR = 4V - low junction capacitance reduces capacitive turn-on loss in high-frequency operation |
Pinout & Package
Package: ITO-220AB - insulated thermoplastic outline with isolated collector tab, UL 94V-0 rated molding compound, matte tin-plated leads compliant with J-STD-002 solderability, and 0.56 N·m maximum mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 | Input terminal for first diode | Accepts positive input for unidirectional conduction path; electrically isolated from Anode 2 and Cathode 2 |
| Cathode 1 | Output terminal for first diode | Provides common cathode node for dual-diode configuration; bonded to metal tab for thermal conduction |
| Anode 2 | Input terminal for second diode | Independent anode for second die; enables dual-channel or center-tapped rectifier use |
| Cathode 2 | Output terminal for second diode | Separate cathode node - allows independent routing or parallel connection depending on layout |
Key Features
| Feature | Design Value |
|---|---|
| Dual-die integration | Two independent 600V/16A rectifiers in one ITO-220AB package - reduces board area vs. discrete dual-DIP solutions |
| Ultra-fast recovery (trr ≤ 80 ns) | Enables efficient operation in 200–500 kHz switch-mode power supplies without snubber networks |
| Low VF (≤1.7 V @ 8A) | Reduces conduction loss by ~15% vs. standard FRDs with VF ≥ 2.0 V at same current |
| Junction-to-case RθJC = 1.5°C/W | Supports 16A continuous current with ≤30°C temperature rise above heatsink at 100°C case temp |
| AEC-Q101 qualified option (HERF1606GH) | Validated for automotive under-hood applications including engine control and ADAS power modules |
Applications
| DC-DC Converter Secondary Rectification | Switching Inverter Freewheeling |
|---|---|
Use Scenario: High-current output stage of isolated 48V–600V DC-DC converters in telecom and server PSUs. IC Role / Device Role / Timing Role: Power rectifier converting transformer secondary AC to regulated DC; operates at 100–300 kHz switching frequency. Use Value: 80ns trr and 1.7V VF minimize switching and conduction losses, improving full-load efficiency by ≥1.2% over standard FRDs. | Use Scenario: Freewheeling path in 3-phase IGBT-based motor drives and UPS inverters. IC Role / Device Role / Timing Role: Clamp diode providing low-impedance return path during IGBT turn-off; handles repetitive 125A surge peaks. Use Value: Dual-die isolation prevents cross-talk; 1.5°C/W RθJC ensures stable thermal performance under 10s burst loads. |
| Solar Microinverter Bridge Arm | Industrial AC-DC Front-End Rectification |
Use Scenario: High-voltage leg of full-bridge synchronous rectifier in 600V-class photovoltaic microinverters. IC Role / Device Role / Timing Role: High-side rectifier in interleaved topology; blocks 600V reverse bias while conducting 16A average current. Use Value: 600V VRRM margin accommodates 1.2× PV string OVP transients; 50pF CJ limits dv/dt-induced gate noise coupling. | Use Scenario: Input rectification stage in industrial 380VAC–540VDC front-end PFC circuits. IC Role / Device Role / Timing Role: Fast-recovery boost diode in continuous conduction mode (CCM) PFC; withstands 420V RMS line voltage. Use Value: 125A IFSM supports cold-start inrush; UL Recognized File #E-326243 confirms safety compliance for Class I equipment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage fast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1606D | VRRM = 600V, VF = 1.75V @ 8A, trr = 65ns, TO-220AC package (non-isolated tab) | Lacks dual-die structure; single-diode only; no AEC-Q101 variant | Select when single-diode function suffices and thermal isolation from PCB is not required |
| IXYS MUR1660CT | VRRM = 600V, VF = 1.85V @ 8A, trr = 75ns, TO-220AB package (isolated tab), dual common-cathode | Common-cathode configuration only; no separate Cathode 2 terminal | Prefer when circuit requires shared cathode topology and lower cost is prioritized over independent cathode routing |
Compared with STTH1606D and IXYS MUR1660CT, the HERF1606G uniquely offers dual independent diodes in an insulated ITO-220AB package with AEC-Q101-qualified option, enabling flexible topologies and automotive-grade reliability where thermal isolation and layout flexibility are critical.
Availability
HERF1606G is available at Aetrix Electronics and suitable for DC-DC converter secondary rectification, switching inverter freewheeling, and solar microinverter bridge arm applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for HERF1606G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.
The HERF1601G–HERF1608G family targets high-efficiency, high-reliability power conversion systems - specifically engineered for reduced conduction and switching losses in next-generation SMPS, EV chargers, and renewable energy inverters.
FAQ
What is the maximum repetitive peak reverse voltage (VRRM) rating for HERF1606G?
The HERF1606G has a VRRM rating of 600 V, as confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version I2105). This value is fixed for the HERF1606G variant and distinguishes it from adjacent family members such as HERF1605G (400V) and HERF1607G (800V). The 600V rating enables use in 400–450V DC bus applications with sufficient safety margin.
Does HERF1606G have AEC-Q101 qualification?
The base HERF1606G is not AEC-Q101 qualified; however, the HERF1606GH variant - identical in all electrical and mechanical specifications except for extended stress testing - is explicitly AEC-Q101 qualified per the Ordering Information section. Customers requiring automotive-grade reliability must specify HERF1606GH, which carries the "H" suffix and meets JESD201 Class 2 whisker requirements.
What is the forward voltage (VF) specification for HERF1606G at operating conditions?
The HERF1606G specifies a maximum forward voltage of 1.7 V at IF = 8 A and TJ = 25°C, per the Electrical Specifications table. This value applies to both diodes in the dual-die package. At higher junction temperatures (e.g., 125°C), VF decreases slightly due to semiconductor physics, but the datasheet does not provide a derated curve beyond the 25°C test condition.
How many terminals does HERF1606G have, and what is their functional assignment?
The HERF1606G has four terminals: Anode 1, Cathode 1, Anode 2, and Cathode 2 - corresponding to its dual-die structure. The metal tab is electrically isolated and serves solely as a thermal path (not a circuit node). Pin assignments are verified via the Marking Diagram and Package Outline Dimensions in the official datasheet, confirming independent anode/cathode pairs for flexible circuit implementation.
What is the junction-to-case thermal resistance (RθJC) of HERF1606G?
The HERF1606G has a typical junction-to-case thermal resistance of 1.5°C/W, as published in the Thermal Performance section of the Taiwan Semiconductor datasheet. This value is measured under standardized JEDEC conditions and applies to both diodes simultaneously. It enables accurate thermal modeling when mounted to a heatsink with known interface resistance and ambient conditions.
HERF1606G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io) (per Diode):
- 16A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 600 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
HERF1606G FAQ
1.How can I place an order for HERF1606G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERF1606G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERF1606G reliable?
The price and inventory of HERF1606G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERF1606G is usually 5 days.
3.What payment methods are accepted for HERF1606G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERF1606G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERF1606G?
HERF1606G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERF1606G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERF1606G?
For technical support, including HERF1606G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERF1606G requirements.
6.How does Aetrix verify that HERF1606G is sourced from the original manufacturer or authorized distributors?
All HERF1606G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERF1606G meets industry standards.
7.What is the process for return or replacement of HERF1606G?
All HERF1606G units undergo pre-shipment inspection (PSI). If there is an issue with HERF1606G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERF1606G part is unused and in its original packaging.
Return procedure for HERF1606G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HERF1606G Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

