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Renesas HIP2100EIBZT
- Part No.:
- HIP2100EIBZT
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Datasheet:
-
HIP2100EIBZT.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,079
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Product details
Overview
HIP2100EIBZT from Renesas Electronics is a 100V/2A peak, high-frequency half-bridge N-channel MOSFET driver IC in an 8-lead EPSOIC package. It features independently controlled high-side and low-side gate drivers with 8ns matching, on-chip 1Ω bootstrap diode, and undervoltage protection on both supplies. It enables efficient telecom half-bridge power supplies and active-clamp forward converters.
For engineers reviewing the HIP2100EIBZT datasheet, HIP2100EIBZT pinout, HIP2100EIBZT application, or HIP2100EIBZT equivalent, key selection criteria include bootstrap supply voltage range (VHS up to 100V), propagation delay matching (≤8ns), CMOS input thresholds, and thermal performance of the EPSOIC package (θJA = 40°C/W).
Technical Context
The HIP2100EIBZT uses a novel level-shifter topology that delivers pulsed-operation power efficiency while maintaining DC-level safety for high-side operation. Its independent HI/LI inputs support non-half-bridge topologies such as two-switch forward and active-clamp forward converters.
Undervoltage lockout (UVLO) is implemented separately on VDD (7.3V rising threshold) and HB (6.9V rising threshold), forcing outputs low during supply faults. The integrated bootstrap diode eliminates external discrete diodes and supports bootstrap capacitor charging up to 114VDC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max HS Voltage | 100V continuous - supports primary-side switching in isolated DC/DC converters up to 48V input. |
| Peak Output Current | 2A per channel - drives 1000pF loads with 10ns rise/fall times for multi-MHz operation. |
| Propagation Delay Match | ≤8ns (tMON/tMOFF) - enables precise dead-time control to prevent shoot-through in hard-switched bridges. |
| Bootstrap Diode RDS(ON) | Typ 0.8Ω - reduces conduction loss and heat generation in bootstrap path vs. discrete diodes. |
| Supply Range (VDD) | +9V to +14V - compatible with standard 12V bias rails and tolerant of automotive-grade transients. |
| Operating Temp Range | –40°C to +125°C - qualified for industrial and avionics environments with full parameter guarantees. |
| Input Thresholds | VIH = 5.8V min, VIL = 5.4V max - CMOS-compatible logic with 0.4V hysteresis for robust noise immunity. |
Pinout & Package
Package: 8-lead EPSOIC (Exposed Pad Small Outline Integrated Circuit), JEDEC MO-220 compliant, footprint M8.15C. Exposed pad (EPAD) is electrically isolated and recommended for grounding to improve thermal performance (θJC = 3.0°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side supply input | Provides power to low-side driver and internal logic; decoupled to VSS; connects to on-chip bootstrap diode anode. |
| HB | High-side bootstrap supply | Connects to positive terminal of external bootstrap capacitor; on-chip diode cathode; max 114V rating. |
| HO | High-side gate output | Drives gate of high-side N-MOSFET; referenced to HS; capable of 2A sink/source. |
| HS | High-side source node | Connects to source of high-side MOSFET and negative terminal of bootstrap capacitor; handles up to 100V swing. |
| HI | High-side input control | CMOS-level digital input controlling HO; independent of LI for flexible timing protocols. |
| LI | Low-side input control | CMOS-level digital input controlling LO; independent of HI to enable non-synchronous topologies. |
| VSS | Ground reference | Chip substrate ground; return path for VDD, LO, and logic; must be low-impedance for noise immunity. |
| LO | Low-side gate output | Drives gate of low-side N-MOSFET; referenced to VSS; matched propagation delay with HO path. |
Key Features
| Feature | Design Value |
|---|---|
| On-chip bootstrap diode | 1Ω typical forward resistance eliminates external diode, reduces BOM count and PCB area in half-bridge layouts. |
| Independent HI/LI inputs | Enables asymmetric drive timing, burst-mode control, and non-half-bridge topologies like two-switch forward converters. |
| UVLO with hysteresis | Dual independent UVLO (VDD & HB) with 0.5V/0.4V hysteresis prevents oscillation during brown-out conditions. |
| Robust high-dv/dt immunity | Outputs remain stable despite HS ringing below ground or slewing at >50V/ns - critical for fast-switching GaN/SiC systems. |
| EPSOIC thermal performance | θJA = 40°C/W and θJC = 3.0°C/W - enables 3.1W max power dissipation at +25°C, superior to SOIC (95°C/W). |
Applications
| Telecom Half-Bridge Power Supplies | Avionics DC/DC Converters |
|---|---|
Use Scenario: 48V input telecom rectifier with synchronous rectification and high-efficiency ZVS operation. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling primary-side N-MOSFETs; provides matched timing and bootstrap management. Use Value: Enables >95% efficiency at 1MHz switching via 10ns edge rates and <8ns delay matching to minimize dead-time losses. | Use Scenario: Compact, radiation-tolerant 28V-to-5V/3.3V DC/DC converter in flight control subsystems. IC Role / Device Role / Timing Role: High-reliability gate driver for isolated forward converter with active clamp reset. Use Value: UVLO protection and glitch-immune outputs ensure safe restart after power transients common in aircraft electrical systems. |
| Two-Switch Forward Converters | Active Clamp Forward Converters |
Use Scenario: Industrial 24V/48V input forward converter delivering 12V@20A with minimal EMI. IC Role / Device Role / Timing Role: Dual-input driver enabling independent control of two primary switches in non-phase-aligned mode. Use Value: Independent HI/LI inputs allow programmable overlap timing to manage transformer reset without external logic. | Use Scenario: High-density server PSU using active clamp forward topology for zero-voltage switching. IC Role / Device Role / Timing Role: Gate driver managing main switch and active clamp switch with precise timing coordination. Use Value: On-chip bootstrap diode and 100V HS rating simplify clamp circuit design and reduce component stress during clamping events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844PbF | SOIC-8, no exposed pad; bootstrap diode not integrated; higher θJA (75°C/W); 600V max HS rating. | Better suited for higher-voltage PFC stages; lacks EPSOIC thermal advantage for high-density 100V designs. | Select IRS21844PbF only when 600V HS capability is required and thermal headroom permits. |
| LM5113MMX/NOPB | MSOP-8, integrated bootstrap FET instead of diode; 100V HS rating; lower peak current (1.5A); no EPAD. | Optimized for space-constrained designs where bootstrap FET efficiency outweighs diode simplicity. | Choose LM5113MMX/NOPB when board area is critical and bootstrap FET control improves system efficiency. |
Compared with IRS21844PbF and LM5113MMX/NOPB, the HIP2100EIBZT uniquely combines EPSOIC thermal performance, integrated 1Ω bootstrap diode, and guaranteed 8ns delay matching - making it optimal for compact, high-frequency 100V half-bridge power stages where thermal density and timing precision are critical.
Availability
HIP2100EIBZT is available at Aetrix Electronics and suitable for telecom power supplies, avionics DC/DC converters, and active-clamp forward converters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for HIP2100EIBZT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.
The HIP2100EIBZT belongs to Renesas' high-frequency gate driver product line, engineered specifically for efficiency-critical isolated DC/DC topologies including two-switch forward, active-clamp forward, and half-bridge resonant converters.
FAQ
What is the maximum allowable bootstrap supply voltage for HIP2100EIBZT?
The HIP2100EIBZT supports a maximum bootstrap supply voltage (HB to HS) of 114VDC, as specified in the Absolute Maximum Ratings table. This allows reliable operation with high-side node voltages up to 100V under continuous conditions and 105V during repetitive transients. The on-chip 1Ω bootstrap diode is rated for this voltage range and eliminates the need for an external diode in the bootstrap path.
Does HIP2100EIBZT require external bootstrap diodes?
No, the HIP2100EIBZT integrates a 1Ω bootstrap diode on-chip, eliminating the need for an external discrete diode. This reduces bill-of-materials count, PCB area, and potential failure points in the bootstrap circuit. The diode's forward voltage is 0.45V typ at 100µA and 0.7V typ at 100mA, supporting efficient capacitor recharge across load conditions.
How does HIP2100EIBZT handle high dv/dt noise on the high-side source (HS) node?
The HIP2100EIBZT is designed to maintain stable output states despite HS node slewing at up to 50V/ns and ringing below ground. Its level-shifter architecture and internal noise filtering prevent false triggering or output glitches - a key differentiator versus legacy drivers. This ensures reliable gate drive in fast-switching SiC/GaN-based converters where HS dv/dt exceeds 30V/ns.
What is the thermal resistance of the HIP2100EIBZT in its EPSOIC package?
The HIP2100EIBZT in the 8-lead EPSOIC package has a junction-to-ambient thermal resistance (θJA) of 40°C/W and a junction-to-case resistance (θJC) of 3.0°C/W when mounted on a high-thermal-conductivity test board with direct-attach features. This enables a maximum power dissipation of 3.1W at +25°C ambient - significantly higher than the SOIC variant (1.3W) due to the exposed pad's enhanced thermal path.
Can HIP2100EIBZT be used in non-half-bridge topologies?
Yes, the HIP2100EIBZT supports non-half-bridge configurations via its independent HI and LI inputs. This enables use in two-switch forward, active-clamp forward, and other topologies requiring asymmetric or non-complementary gate drive timing. The datasheet explicitly lists these as target applications, and the functional block diagram confirms separate input paths feeding independent drivers.
HIP2100EIBZT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 9V ~ 14V
- Logic Voltage - VIL, VIH:
- 4V, 7V
- Current - Peak Output (Source, Sink):
- 2A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 10ns, 10ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC-EP
HIP2100EIBZT FAQ
1.How can I place an order for HIP2100EIBZT through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2100EIBZT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2100EIBZT reliable?
The price and inventory of HIP2100EIBZT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2100EIBZT is usually 5 days.
3.What payment methods are accepted for HIP2100EIBZT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2100EIBZT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2100EIBZT?
HIP2100EIBZT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2100EIBZT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2100EIBZT?
For technical support, including HIP2100EIBZT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2100EIBZT requirements.
6.How does Aetrix verify that HIP2100EIBZT is sourced from the original manufacturer or authorized distributors?
All HIP2100EIBZT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2100EIBZT meets industry standards.
7.What is the process for return or replacement of HIP2100EIBZT?
All HIP2100EIBZT units undergo pre-shipment inspection (PSI). If there is an issue with HIP2100EIBZT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2100EIBZT part is unused and in its original packaging.
Return procedure for HIP2100EIBZT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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