My Inquiry
My Account
Renesas HIP2100IBZT
- Part No.:
- HIP2100IBZT
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
HIP2100IBZT.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,851
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HIP2100IBZT from Renesas Electronics is a 100V/2A peak, high-frequency half-bridge gate driver IC for N-channel MOSFETs. It features independently controlled high-side and low-side drivers with 8ns matching, on-chip 1Ω bootstrap diode, CMOS input thresholds, and undervoltage protection on both supplies-designed for telecom half-bridge power supplies and avionics DC/DC converters.
For engineers reviewing the HIP2100IBZT datasheet, HIP2100IBZT pinout, HIP2100IBZT application, or HIP2100IBZT equivalent, key selection criteria include bootstrap supply voltage range (up to 114V), propagation delay matching (≤10ns), 10ns rise/fall time into 1000pF, thermal resistance (θJA = 95°C/W), and SOIC-8 package compliance with IPC-2221 100V conductor spacing guidelines.
Technical Context
The HIP2100IBZT implements a novel level-shifter topology enabling pulsed-operation power efficiency while maintaining DC-level safety during high dv/dt events. Its independent HI/LI inputs support non-half-bridge topologies like two-switch forward and active-clamp forward converters.
Undervoltage lockout (UVLO) triggers at VDD = 7.3V (rising) and VHB = 6.9V (rising), each with hysteresis (0.5V and 0.4V respectively), forcing outputs low during supply faults. The integrated bootstrap diode eliminates external discrete components and supports up to 100mA average current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max HS Voltage | 100V continuous, 105V transient - enables use in 48V-input telecom and avionics DC/DC stages |
| Bootstrap Diode RD | Typ 0.8Ω - reduces conduction loss and heat generation in bootstrap loop |
| Propagation Delay Match | tMON/tMOFF ≤ 8ns typ - ensures precise dead-time control in MHz-range switching |
| Rise/Fall Time (1000pF) | Typ 10ns - supports >20MHz PWM operation with minimal gate drive loss |
| VDD Operating Current | Typ 1.5mA at 500kHz - enables low-power operation in high-efficiency SMPS designs |
| Driver Output Resistance | 3Ω - balances switching speed and EMI control for robust gate driving |
| Input Threshold Hysteresis | 0.4V - improves noise immunity against ground bounce and coupling in noisy power environments |
Pinout & Package
Package: 8-lead narrow-body SOIC (RoHS-compliant, JEDEC MS-012-AA, M8.15 drawing), 5.80 × 4.00 × 1.75 mm, θJA = 95°C/W, rated for -40°C to +125°C ambient operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side supply input | Provides power to low-side driver and internal logic; decoupling to VSS required; connects to on-chip bootstrap diode anode |
| HB | High-side bootstrap supply | Accepts external bootstrap capacitor positive terminal; on-chip diode cathode; max 114V rating |
| HO | High-side gate output | Drives gate of high-side N-MOSFET; referenced to HS; capable of 2A peak sink/source |
| HS | High-side source reference | Connects to source of high-side MOSFET; forms return path for bootstrap capacitor and HO output |
| LO | Low-side gate output | Drives gate of low-side N-MOSFET; referenced to VSS; 2A peak sink/source capability |
| LI | Low-side input | CMOS-compatible digital input controlling LO; VIH = 5.8V min, VIL = 5.4V max at TJ = +25°C |
| HI | High-side input | CMOS-compatible digital input controlling HO; independent of LI for flexible timing protocols |
| VSS | Ground reference | Chip common return for VDD, LI, HI, LO; must be low-impedance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| On-chip bootstrap diode | 1Ω typical dynamic resistance eliminates external diode, reducing BOM count and PCB area |
| Independent HI/LI inputs | Enables asymmetric dead-time control and non-standard topologies (e.g., synchronous buck-boost) |
| UVLO with hysteresis | Prevents erratic output behavior during brown-out by holding outputs low until stable VDD/HB recovery |
| HS slew rate immunity | Outputs remain stable under HS ringing below ground or dv/dt >50V/ns - critical for hard-switching reliability |
| SOIC-8 100V spacing | Meets IPC-2221 creepage/clearance requirements for 100V conductor spacing - simplifies safety certification |
Applications
| Telecom Half-Bridge Power Supplies | Avionics DC/DC Converters |
|---|---|
Use Scenario: 48V input, 12V output isolated half-bridge converter in telecom server power modules. IC Role / Device Role / Timing Role: HIP2100IBZT drives complementary N-MOSFETs in primary-side half-bridge, managing dead-time and bootstrap charging. Use Value: 10ns gate drive transitions and 8ns delay matching minimize shoot-through risk at 500kHz–1MHz switching frequencies. | Use Scenario: 28V aircraft bus-fed DC/DC converter supplying 5V/3.3V to flight control electronics. IC Role / Device Role / Timing Role: HIP2100IBZT provides isolated high-side/low-side gate drive with UVLO monitoring for both supplies. Use Value: On-chip bootstrap diode and 100V HS rating enable compact, high-reliability design without external HV diodes. |
| Two-Switch Forward Converters | Active Clamp Forward Converters |
Use Scenario: 36–75V input telecom rectifier feeding two-switch forward topology for 12V/20A output. IC Role / Device Role / Timing Role: HIP2100IBZT controls two primary-side switches with independent HI/LI inputs and matched propagation delays. Use Value: Independent inputs allow precise phase control between switches, improving transformer utilization and reducing core loss. | Use Scenario: High-efficiency 48V-to-12V active clamp forward converter in industrial UPS systems. IC Role / Device Role / Timing Role: HIP2100IBZT drives main switch and active clamp switch with synchronized timing and bootstrap management. Use Value: Fast 10ns rise/fall times and low 3Ω output resistance reduce switching losses in clamp circuit during high-frequency operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2110PbF | Higher VBS max (600V), no on-chip bootstrap diode, slower propagation (60ns typ), SOIC-14 package | Designed for higher-voltage motor drives; requires external bootstrap diode and larger layout area | Choose IR2110PbF only if >200V HS operation or dual-channel high/low side isolation is required |
| LM5113MMX/NOPB | 3A peak drive, 5V logic compatible, no UVLO on HB, QFN-10 package, no integrated bootstrap diode | Optimized for 5V controller interfaces and space-constrained layouts; lacks bootstrap diode integration | Choose LM5113MMX/NOPB when interfacing with 5V microcontrollers and external bootstrap diode is acceptable |
Compared with IR2110PbF and LM5113MMX/NOPB, the HIP2100IBZT delivers superior integration (on-chip 1Ω bootstrap diode), tighter propagation matching (≤8ns vs ≥60ns), and SOIC-8 footprint efficiency-making it optimal for cost-sensitive, high-frequency telecom and avionics half-bridge designs where board space and component count are critical.
Availability
HIP2100IBZT is available at Aetrix Electronics and suitable for telecom half-bridge power supplies, avionics DC/DC converters, and two-switch forward converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for HIP2100IBZT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The HIP2100IBZT belongs to Renesas' high-frequency power driver product line, engineered specifically for efficient, reliable gate driving in isolated DC/DC converters and telecom power systems operating up to 1MHz.
FAQ
What is the maximum bootstrap supply voltage supported by the HIP2100IBZT?
The HIP2100IBZT supports a maximum bootstrap supply voltage (VHB) of 114VDC, as specified in the Absolute Maximum Ratings table. This allows safe operation with high-side source voltages up to 100V continuous and 105V transient, making HIP2100IBZT suitable for 48V-input telecom and avionics power supplies. Exceeding 114V risks permanent damage to the on-chip bootstrap diode and level-shifting circuitry.
Does the HIP2100IBZT require an external bootstrap diode?
No, the HIP2100IBZT does not require an external bootstrap diode. It integrates a 1Ω typical dynamic resistance bootstrap diode between VDD and HB pins, eliminating the need for discrete components and reducing PCB footprint and BOM cost. This on-chip diode supports up to 100mA average current and is explicitly validated in the Electrical Specifications section of the HIP2100IBZT datasheet.
What is the thermal resistance (θJA) of the HIP2100IBZT in its SOIC-8 package?
For the HIP2100IBZT in its 8-lead SOIC package (M8.15), the typical junction-to-ambient thermal resistance (θJA) is 95°C/W, measured per JEDEC JESD51-2A on a high-effective thermal conductivity test board in free air. This value is critical for calculating junction temperature rise under load and ensuring reliable operation within the -40°C to +125°C ambient range.
Can the HIP2100IBZT drive both high-side and low-side N-MOSFETs in a synchronous buck configuration?
Yes, the HIP2100IBZT can drive both high-side and low-side N-MOSFETs in a synchronous buck configuration, though it is optimized for half-bridge topologies. Its independent HI and LI inputs allow separate control of each gate, and its 2A peak sink/source capability, 10ns rise/fall times, and 3Ω output resistance provide sufficient drive strength for typical buck applications up to ~1MHz. However, dedicated synchronous buck drivers may offer tighter dead-time control for ultra-high-efficiency designs.
How does the HIP2100IBZT handle high dv/dt noise on the high-side source (HS) node?
The HIP2100IBZT is designed to maintain stable output operation under high dv/dt conditions on the HS node, with immunity specified up to 50V/ns. Its level-shifter architecture prevents false triggering or output glitches during HS slewing, and outputs remain unaffected by HS ringing below ground. This robustness is confirmed in the datasheet's "Features" list and functional block diagram, ensuring reliable gate drive in fast-switching, high-noise power converter environments.
HIP2100IBZT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 9V ~ 14V
- Logic Voltage - VIL, VIH:
- 4V, 7V
- Current - Peak Output (Source, Sink):
- 2A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 10ns, 10ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
HIP2100IBZT FAQ
1.How can I place an order for HIP2100IBZT through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2100IBZT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2100IBZT reliable?
The price and inventory of HIP2100IBZT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2100IBZT is usually 5 days.
3.What payment methods are accepted for HIP2100IBZT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2100IBZT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2100IBZT?
HIP2100IBZT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2100IBZT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2100IBZT?
For technical support, including HIP2100IBZT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2100IBZT requirements.
6.How does Aetrix verify that HIP2100IBZT is sourced from the original manufacturer or authorized distributors?
All HIP2100IBZT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2100IBZT meets industry standards.
7.What is the process for return or replacement of HIP2100IBZT?
All HIP2100IBZT units undergo pre-shipment inspection (PSI). If there is an issue with HIP2100IBZT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2100IBZT part is unused and in its original packaging.
Return procedure for HIP2100IBZT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HIP2100IBZT Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
