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Renesas HIP2100IBZT7A
- Part No.:
- HIP2100IBZT7A
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
HIP2100IBZT7A.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:6,592
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Product details
Overview
HIP2100IBZT7A from Renesas Electronics is a 100V/2A peak, high-frequency half-bridge gate driver IC for N-channel MOSFETs. It features independently controlled high-side and low-side drivers with 8ns matching, on-chip 1Ω bootstrap diode, CMOS input thresholds, and undervoltage protection on both VDD and HB supplies. It enables robust operation in telecom half-bridge power supplies and active-clamp forward converters.
For engineers reviewing the HIP2100IBZT7A datasheet, HIP2100IBZT7A pinout, HIP2100IBZT7A application, or HIP2100IBZT7A equivalent, key selection considerations include bootstrap diode integration, 10ns rise/fall times into 1000pF, ±2A peak output drive, 8ns propagation delay matching, and SOIC-8 package compliance with IPC-2221 100V conductor spacing guidelines.
Technical Context
The HIP2100IBZT7A implements a novel level-shifter topology that delivers pulsed-operation power efficiency while maintaining DC-level safety during high dv/dt HS slewing. Its independent HI/LI inputs support non-half-bridge topologies like two-switch forward and active-clamp forward converters.
Undervoltage lockout (UVLO) operates separately on VDD (7.3V rising threshold) and HB (6.9V rising threshold), forcing outputs low during supply faults. The integrated bootstrap diode eliminates external discrete diodes and supports up to 114VDC bootstrap voltage, enabling reliable high-side switching at 100V HS rail.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max HS Voltage | 100V continuous - supports primary-side switching in isolated DC/DC converters up to 48V input. |
| Peak Output Current | ±2A - drives large gate capacitances (e.g., IRFR120) with 20ns rise time and 10ns fall time. |
| Propagation Delay Match | 8ns max - ensures precise dead-time control between HO and LO edges for loss reduction. |
| Rise/Fall Time (1000pF) | 10ns typ - enables multi-MHz switching frequencies in high-efficiency SMPS designs. |
| Bootstrap Diode VF | 0.45V @ 100µA - reduces bootstrap charge loss and improves efficiency vs. discrete diode solutions. |
| UVLO Threshold Hysteresis | 0.5V (VDD), 0.4V (HB) - prevents oscillation during marginal supply conditions. |
| Supply Range (VDD) | +9V to +14V - compatible with standard 12V bias rails and tolerant of automotive-style transients. |
Pinout & Package
Package: 8-lead SOIC (RoHS-compliant, M8.15 drawing), 100% matte tin termination, IPC-2221 100V conductor spacing compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side supply input | Power source for LO driver and logic; decoupled to VSS; powers internal VDD-to-HB diode. |
| HB | High-side bootstrap supply node | Connects to positive terminal of external bootstrap capacitor; integrates 1Ω diode from VDD. |
| HO | High-side gate output | Drives gate of high-side N-MOSFET; rated for VHS −0.3V to VHB +0.3V swing. |
| HS | High-side source reference | Connects to source of high-side MOSFET; serves as return path for bootstrap capacitor and HO output. |
| HI | High-side input signal | CMOS-compatible control input (VIH = 5.8V min); independent of LI for flexible timing protocols. |
| LI | Low-side input signal | CMOS-compatible control input (VIL = 5.4V max); allows non-synchronous or complementary drive schemes. |
| VSS | Ground reference | Common return for VDD, LO, and logic; must be low-inductance connection for noise immunity. |
| LO | Low-side gate output | Drives gate of low-side N-MOSFET; rated for −0.3V to VDD +0.3V; 2A peak sink/source capability. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | 1Ω dynamic resistance, 0.45V forward drop at 100µA - eliminates external diode, saves PCB area and BOM cost. |
| Independent HI/LI inputs | Enables non-complementary drive schemes (e.g., burst mode, phase-shifted control) without external logic. |
| Matched propagation delays | 8ns max difference between HO/LO turn-on and turn-off paths - simplifies dead-time design and minimizes shoot-through risk. |
| Robust UVLO with hysteresis | Dual-rail protection (VDD & HB) with 0.5V/0.4V hysteresis - prevents erratic switching during brown-out or bootstrap depletion. |
| High dv/dt immunity | Outputs remain stable during HS ringing below ground or fast HS slewing (<50V/ns) - eliminates need for external Miller clamps. |
Applications
| Telecom Half-Bridge Power Supplies | Avionics DC/DC Converters |
|---|---|
Use Scenario: 48V input telecom rectifier with synchronous rectification and high-density half-bridge topology. IC Role / Device Role / Timing Role: High-frequency gate driver controlling primary-side N-MOSFETs in resonant or hard-switched half-bridge stage. Use Value: 10ns switching times and 2A drive strength enable >1MHz operation while maintaining ZVS/ZCS conditions. | Use Scenario: Ruggedized 28V–115VAC aircraft power conversion with strict EMI and reliability requirements. IC Role / Device Role / Timing Role: Isolated gate driver for high-side/low-side switches in dual-active-bridge or forward-derived topologies. Use Value: On-chip bootstrap diode and HV-rated HS pin (−1V to 100V) reduce component count and improve fault tolerance. |
| Two-Switch Forward Converters | Active Clamp Forward Converters |
Use Scenario: High-efficiency 36–75V input industrial power supply using two-switch forward architecture. IC Role / Device Role / Timing Role: Dual-gate driver coordinating main switch pair with precise dead-time control and independent input timing. Use Value: Independent HI/LI inputs allow asymmetric duty cycle and programmable overlap for optimal core reset and clamp energy recovery. | Use Scenario: High-voltage LED driver or battery charger using active-clamp forward with 100V+ primary side. IC Role / Device Role / Timing Role: Gate driver for main switch and active-clamp switch, requiring fast, matched transitions and bootstrap stability. Use Value: 8ns delay matching and 114V max bootstrap voltage ensure clean clamp switch timing and minimize voltage spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844PbF | Higher 600V HS rating; no integrated bootstrap diode; 50ns typical propagation delay. | Better suited for higher bus voltages (>200V); requires external bootstrap diode and larger layout area. | Select when operating above 100V HS or needing extended voltage margin; avoid if minimizing BOM count is critical. |
| LM5113MMX/NOPB | 3A peak drive; 15ns propagation delay; separate VDD and VBS supplies; no integrated bootstrap diode. | Optimized for ultra-high-speed GaN FETs; lacks on-chip diode and HV HS rating for 100V-class silicon MOSFETs. | Prefer for >5MHz GaN-based designs; HIP2100IBZT7A remains superior for cost-sensitive 100V silicon MOSFET systems with tight layout constraints. |
Compared with IRS21844PbF and LM5113MMX/NOPB, HIP2100IBZT7A offers unique integration of a 1Ω bootstrap diode and 8ns delay matching in an IPC-2221-compliant SOIC-8 package-reducing component count and layout complexity for 100V telecom and avionics half-bridge supplies without sacrificing timing precision.
Availability
HIP2100IBZT7A is available at Aetrix Electronics and suitable for telecom power supplies, avionics DC/DC converters, and active-clamp forward converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for HIP2100IBZT7A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.
The HIP2100 product line was designed specifically for high-frequency, cost-sensitive half-bridge power conversion in telecom and aerospace-grade DC/DC modules-emphasizing integration, reliability, and ease of use in space-constrained layouts.
FAQ
What is the maximum bootstrap voltage supported by the HIP2100IBZT7A?
The HIP2100IBZT7A supports a maximum bootstrap voltage of +114VDC on the HB pin. This rating allows reliable high-side operation with 100V HS rail and sufficient margin for transient overshoot. The on-chip bootstrap diode is rated for average current up to 100mA and exhibits 0.45V forward voltage at 100µA, making HIP2100IBZT7A suitable for high-efficiency, compact half-bridge designs where external diode elimination is critical.
Does the HIP2100IBZT7A require an external bootstrap diode?
No, the HIP2100IBZT7A does not require an external bootstrap diode. It integrates a 1Ω on-chip bootstrap diode between VDD and HB pins, confirmed in the datasheet's "Features" and "Electrical Specifications" sections. This integration reduces BOM count, PCB area, and layout complexity. The diode's low forward voltage (0.45V typ at 100µA) and low dynamic resistance directly benefit efficiency in HIP2100IBZT7A-based power stages.
What is the temperature range specification for the HIP2100IBZT7A?
The HIP2100IBZT7A is specified for operation across −40°C to +125°C ambient temperature. This extended industrial temperature range is explicitly stated in the Ordering Information table and validated across all electrical parameters-including propagation delays, UVLO thresholds, and output drive strength-in the Electrical Specifications section. The SOIC-8 package (M8.15) has θJA = 95°C/W, supporting thermal design in demanding environments where HIP2100IBZT7A is deployed.
How does the HIP2100IBZT7A handle high dv/dt noise on the HS node?
The HIP2100IBZT7A maintains stable output behavior during high dv/dt events on the HS node (up to <50V/ns), as confirmed in the datasheet's "Features" list. Its level-shifter topology and internal design prevent false triggering or output glitches caused by HS ringing below ground or rapid slewing. This immunity eliminates the need for external Miller clamps or RC snubbers in HIP2100IBZT7A-based half-bridge circuits, improving reliability and reducing component count.
What are the key differences between HIP2100IBZT7A and HIP2100IRZT?
The HIP2100IBZT7A uses an 8-lead SOIC package (M8.15), while HIP2100IRZT uses a 16-lead 5×5mm QFN package (L16.5x5). The QFN variant offers lower thermal resistance (θJC = 6.5°C/W vs. 50°C/W for SOIC) and improved PCB efficiency but requires different layout and reflow profiles. Both share identical electrical specifications, pin functions, and feature set-including integrated bootstrap diode and 8ns delay matching-making HIP2100IBZT7A ideal for legacy SOIC-based designs prioritizing manufacturability and compatibility.
HIP2100IBZT7A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 9V ~ 14V
- Logic Voltage - VIL, VIH:
- 4V, 7V
- Current - Peak Output (Source, Sink):
- 2A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 114 V
- Rise / Fall Time (Typ):
- 10ns, 10ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
HIP2100IBZT7A FAQ
1.How can I place an order for HIP2100IBZT7A through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2100IBZT7A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2100IBZT7A reliable?
The price and inventory of HIP2100IBZT7A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2100IBZT7A is usually 5 days.
3.What payment methods are accepted for HIP2100IBZT7A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2100IBZT7A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2100IBZT7A?
HIP2100IBZT7A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2100IBZT7A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2100IBZT7A?
For technical support, including HIP2100IBZT7A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2100IBZT7A requirements.
6.How does Aetrix verify that HIP2100IBZT7A is sourced from the original manufacturer or authorized distributors?
All HIP2100IBZT7A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2100IBZT7A meets industry standards.
7.What is the process for return or replacement of HIP2100IBZT7A?
All HIP2100IBZT7A units undergo pre-shipment inspection (PSI). If there is an issue with HIP2100IBZT7A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2100IBZT7A part is unused and in its original packaging.
Return procedure for HIP2100IBZT7A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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