Renesas HIP2101EIBZ

Overview

HIP2101EIBZ from Renesas Electronics is a 100V/2A peak, high-frequency half-bridge N-channel MOSFET driver IC in an 8-lead EPSOIC package with exposed pad. It features independent TTL/CMOS-compatible HI/LI inputs, matched 13ns propagation delay between high-side and low-side drivers, on-chip 1Ω bootstrap diode, and undervoltage protection on both VDD and HB supplies. It is used in telecom half-bridge power supplies and avionics DC-DC converters.

For engineers reviewing the HIP2101EIBZ datasheet, HIP2101EIBZ pinout, HIP2101EIBZ application, or HIP2101EIBZ equivalent, key selection considerations include bootstrap diode integration, 100V HS voltage rating, 10ns rise/fall time into 1000pF, independent input control for non-half-bridge topologies, and thermal performance enabled by the EPSOIC exposed pad.

Technical Context

The HIP2101EIBZ implements a pulsed-level-shift topology that delivers low-power operation while maintaining DC-safe output state recovery after high-side supply undervoltage events. Its dual independent input architecture enables flexible dead-time control and supports non-standard topologies like two-switch forward and active-clamp forward converters.

Undervoltage lockout thresholds are 7.3V (VDD) and 6.9V (HB) with 0.5V and 0.4V hysteresis respectively, ensuring robust operation during supply transients. The on-chip bootstrap diode eliminates external discrete diodes and supports up to 114V bootstrap supply voltage.

Key Specifications

Pinout & Package

The HIP2101EIBZ is housed in an 8-lead Narrow Body Small Outline Exposed Pad (EPSOIC) package per JEDEC MO-220, with dimensions 4.80–4.98mm × 3.81–3.99mm × 1.42–1.70mm and a thermally enhanced exposed pad (EPAD) electrically isolated from all pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844PbF and LM5109BMAX, the HIP2101EIBZ uniquely combines 100V HS capability, integrated bootstrap diode, independent inputs, and EPSOIC thermal performance - making it optimal for high-density, high-frequency telecom and avionics half-bridge designs where layout area, reliability, and timing precision are critical.

Availability

HIP2101EIBZ is available at Aetrix Electronics and suitable for telecom power supplies, avionics DC-DC converters, and two-switch forward converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for HIP2101EIBZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.

The HIP2101 product line is designed for high-frequency, high-reliability half-bridge gate driving in telecom, avionics, and industrial power conversion - emphasizing integration, thermal efficiency, and robustness under supply transients.

FAQ

What is the maximum allowable high-side voltage for HIP2101EIBZ?

The HIP2101EIBZ supports a continuous high-side voltage (V_HS) of –1V to +100V and withstands repetitive transients up to +105V. This 100V rating enables direct use in 48V-input telecom and 28V avionics power systems without level-shifting or external protection circuitry. The device maintains safe operation even with fast dv/dt edges up to 50V/ns.

Does HIP2101EIBZ require an external bootstrap diode?

No, the HIP2101EIBZ integrates a 1Ω typical dynamic resistance bootstrap diode between VDD and HB pins. This eliminates the need for an external diode, reducing bill-of-materials count, PCB footprint, and potential failure points. The on-chip diode supports up to 100mA average current and is rated for 114V maximum reverse voltage.

How does HIP2101EIBZ handle high-side supply undervoltage events?

The HIP2101EIBZ features dedicated undervoltage lockout (UVLO) on the HB supply with a 6.9V rising threshold and 0.4V hysteresis. Critically, unlike many competitors, its high-side output (HO) returns to the correct logic state after a momentary HB dip - preventing shoot-through and ensuring safe restart without external supervision circuits.

What is the thermal advantage of the EPSOIC package used in HIP2101EIBZ?

The HIP2101EIBZ's EPSOIC package delivers θ_JA = 40°C/W - more than double the thermal performance of standard SOIC (95°C/W). This is achieved via an electrically isolated exposed pad (EPAD) that, when soldered to a PCB ground plane, significantly enhances heat dissipation and allows sustained 2A peak drive operation in compact, high-power-density layouts.

Can HIP2101EIBZ be used in non-half-bridge topologies?

Yes, the HIP2101EIBZ supports non-half-bridge configurations due to its independent HI and LI inputs with TTL/CMOS-compatible thresholds. It is explicitly validated for two-switch forward and active-clamp forward converters, where separate control of primary and clamp switches is required. Its matched propagation delays and robust isolation also support custom synchronous rectifier or LLC resonant gate drive schemes.