Renesas HIP2104FRAANZ-T

Overview

HIP2104FRAANZ-T from Renesas Electronics is a 60V, 2A peak half-bridge gate driver IC with integrated 3.3V/75mA and 12V/75mA linear regulators, 4V undervoltage lockout, and active low-side pull-down for motor drive applications requiring high reliability and low sleep current.

For engineers reviewing the HIP2104FRAANZ-T datasheet, HIP2104FRAANZ-T pinout, HIP2104FRAANZ-T application, or HIP2104FRAANZ-T equivalent, key selection criteria include bootstrap FET integration, dual LDO enable control (VCen/VDen), 5µA shutdown current at 50V VBAT, and 12-pin DFN thermal performance with EPAD grounding.

Technical Context

The HIP2104FRAANZ-T implements independent HI/LI input logic with shoot-through prevention via internal state machine-both outputs forced low if HI and LI are simultaneously high for >30µs, triggering Sleep Mode. The 12V LDO powers internal gate drivers and bootstrap circuitry; the 3.3V LDO supplies external microcontrollers.

It uses an integrated boot FET (R_DS(on) = 2.42Ω typ) instead of an external diode, enabling efficient bootstrap capacitor charging during LO conduction. UVLO (4.2V falling threshold, 0.34V hysteresis) disables HO/LO outputs but leaves VDD/VCC regulators functional when enabled.

Key Specifications

Pinout & Package

HIP2104FRAANZ-T is housed in a RoHS-compliant 4×4mm, 12-lead DFN package with exposed thermal pad (EPAD) that must be soldered to PCB VSS plane for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge driver applications.

Compared with IRS2004STRPBF and LM5109BMAX/NOPB, the HIP2104FRAANZ-T uniquely integrates both 3.3V and 12V LDOs with independent enables, targets 60V-class battery-powered motor drives, and delivers lowest sleep current (4.8µA) in its package class-making it optimal for portable and energy-sensitive applications.

Availability

HIP2104FRAANZ-T is available at Aetrix Electronics and suitable for brushless DC motor control, uninterruptible power supply (UPS), Class-D audio amplifier, and industrial DC motor drive applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for HIP2104FRAANZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.

The HIP2104FRAANZ-T belongs to Renesas' high-performance gate driver product line, engineered specifically for efficient, reliable, and compact half-bridge motor drive systems operating from 5V to 50V battery inputs.

FAQ

What is the function of the VDen and VCen pins on the HIP2104FRAANZ-T?

The VDen pin enables the 12V LDO that powers the internal gate drivers and bootstrap circuitry, while the VCen pin enables the 3.3V LDO that supplies external microcontrollers or sensors. Both inputs are VBAT-tolerant, feature 1ms internal debouncing, and operate independently-allowing flexible power sequencing. When either pin is low, its respective regulator shuts down, reducing system quiescent current. This behavior is explicitly defined in the HIP2104FRAANZ-T datasheet Section 2.2 and Figure 5.

Does the HIP2104FRAANZ-T support shoot-through protection during normal PWM operation?

The HIP2104FRAANZ-T prevents shoot-through only when both HI and LI inputs are held high simultaneously for >30µs-triggering Sleep Mode with HO in high-impedance and LO actively pulled low. It does **not** provide automatic dead-time insertion during alternating HI/LI switching. External controller dead time must be applied before HI transitions high after LI goes low (or vice versa), as confirmed in Section 5 Functional Description and Figure 7 timing diagrams of the HIP2104FRAANZ-T datasheet.

What is the maximum allowable bootstrap capacitor value for the HIP2104FRAANZ-T?

The HIP2104FRAANZ-T specifies a maximum bootstrap capacitor value of 10µF, as stated in Absolute Maximum Ratings (Section 3.1). Exceeding this value risks overstressing the internal boot FET during charging cycles. Typical designs use 0.1–1µF ceramic capacitors placed close to HB/HS pins. The capacitor must sustain sufficient voltage (>4.2V) across the bootstrap circuit during high-side conduction; droop below UVLO threshold disables HO, per Section 5.4 and Figure 19 of the HIP2104FRAANZ-T datasheet.

Can the HIP2104FRAANZ-T drive both N-channel and P-channel high-side MOSFETs?

The HIP2104FRAANZ-T is designed exclusively for N-channel high-side MOSFETs using bootstrap gate drive architecture. Its HO output is referenced to the HS node and cannot sink current to drive P-channel devices. The datasheet block diagram (Figure 1.2), functional description (Section 5), and absolute maximum ratings (VHB–VHS) all assume N-channel topology. Driving P-channel FETs would require level-shifting or high-side current-source drivers not supported by the HIP2104FRAANZ-T architecture.

How is thermal performance managed in the HIP2104FRAANZ-T's 4×4mm DFN package?

Thermal performance relies on the exposed pad (EPAD) soldered directly to a PCB copper plane tied to VSS. With θ_JA = 44°C/W in free air and θ_JC = 7°C/W to the EPAD, >2.3W can be dissipated at +25°C ambient. Renesas recommends minimum 250mm² copper area under the EPAD with ≥4 thermal vias to inner ground planes. Layout guidelines in Section 7 and thermal data in Section 3.2 of the HIP2104FRAANZ-T datasheet confirm this approach is mandatory for sustained 2A peak output operation.