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Renesas HIP2210FRTZ
- Part No.:
- HIP2210FRTZ
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
HIP2210FRTZ.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10TDFN
- Quantity:
- Payment:
- Shipping:
Inventory:819
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Product details
Overview
HIP2210FRTZ from Renesas is a 100V, 3A source/4A sink high-frequency half-bridge NMOS gate driver with tri-level PWM input and programmable dead time (35–350ns). It features integrated bootstrap diode, 6–18V wide supply range, and operates from –40°C to +125°C in telecom DC/DC converters and BLDC motor drives.
For engineers reviewing the HIP2210FRTZ datasheet, HIP2210FRTZ pinout, HIP2210FRTZ application, or HIP2210FRTZ equivalent, this page delivers verified technical context, real-world design meaning for each specification, validated pin functions, and two confirmed alternative parts with documented functional and application differences.
Technical Context
The HIP2210FRTZ implements a tri-level PWM control architecture where a single input pin governs both high-side (HO) and low-side (LO) outputs: logic high enables HO, logic low enables LO, and mid-level state forces both outputs off. Dead time is precisely set via external resistor on RDT pin, enabling shoot-through prevention across 35–350ns.
It integrates a 0.5Ω typical bootstrap diode and supports 115V bootstrap voltage, allowing reliable 100V half-bridge operation. Propagation delays are 30–40ns (typ), with matching within ±10ns, and VDD/VHB UVLO thresholds ensure robust undervoltage protection at 5.6V (rising) and 5.1V (falling).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Driver Type | Half-bridge NMOS gate driver with independent HO/LO outputs and integrated bootstrap diode |
| Output Current | 3A source / 4A sink - sufficient to drive large gate capacitances at high switching frequencies |
| Propagation Delay | 30–40ns typical - enables stable operation up to ~5 MHz with tight timing margins |
| Dead Time Range | 35–350ns adjustable via RDT resistor - prevents shoot-through in hard-switched topologies |
| Supply Voltage | 6–18V VDD - compatible with 12V industrial rails and supports wide-input DC/DC stages |
| Operating Temp | –40°C to +125°C - qualified for automotive under-hood and telecom base station environments |
| Package | 10-lead 4×4mm TDFN with EPAD - provides low thermal resistance (θJC = 2.5°C/W) for high-power density designs |
Pinout & Package
Package: 10-lead 4×4mm thermally enhanced TDFN (RoHS-compliant, L10.4x4 drawing) with exposed pad (EPAD) electrically isolated and intended for PCB ground connection via thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Analog supply for low-side driver and internal logic | Must be decoupled with ≥4.7µF ceramic + 0.1µF close to pin; powers internal regulators and level shifters |
| HB | Bootstrap supply node for high-side driver | Connects to bootstrap capacitor top; referenced to HS; max 115V relative to HS |
| HO | High-side gate output | Drives gate of high-side NMOS; rail-to-rail swing between HS and HB; 3A/4A drive strength |
| HS | High-side source reference | Connects to source of high-side FET; bootstrap capacitor bottom terminal; tolerates –10V continuous |
| VREF | External reference for PWM threshold scaling | Sets 2.7–5.5V logic-compatible tri-level thresholds; internal 100kΩ pull-down if floating |
| RDT | Dead time programming input | Resistor to VSS sets dead time: 10kΩ → ~36ns, 100kΩ → ~360ns; short to VSS → 15ns min |
| EN | Global output enable | Active-high; internal 100kΩ pull-down; disables HO/LO when low; propagation delay 450–1100ns |
| PWM | Tri-level control input | Single-pin control: high→HO on/LO off, low→HO off/LO on, mid→both off; biased to 50% VREF when floating |
| VSS | Ground reference | Return for VDD supply; must connect to EPAD and system ground plane for thermal and noise performance |
| LO | Low-side gate output | Drives gate of low-side NMOS; rail-to-rail swing between VSS and VDD; 3A/4A drive strength |
Key Features
| Feature | Design Value |
|---|---|
| Tri-level PWM interface | Reduces controller I/O count by 1 pin versus HI/LI; eliminates need for external logic to generate dead time |
| Programmable dead time | Adjustable 35–350ns via single resistor - avoids fixed-delay compromises in resonant or ZVS topologies |
| Integrated bootstrap diode | 0.5Ω typical forward resistance - eliminates external diode, saves board space, improves reliability |
| VDD and HB UVLO | Independent 5.6V/5.1V (VDD) and 5.1V/4.6V (HB) thresholds - prevents erratic switching during power-up/down |
| Robust noise immunity | Input hysteresis ≥0.7V and HS pin tolerance to –10V - suppresses false triggering in noisy half-bridge node |
Applications
| Telecom DC/DC Converters | BLDC Motor Control |
|---|---|
Use Scenario: 48V input, 12V output half-bridge DC/DC converter in 5G base station power supply. IC Role / Device Role / Timing Role: Gate driver for 100V Si MOSFETs operating at 300–500kHz with precise dead time control. Use Value: Integrated bootstrap diode and 35–350ns programmable dead time prevent shoot-through while reducing BOM count by one diode and discrete timing component. | Use Scenario: 3-phase inverter driving 24V–48V BLDC motors in industrial HVAC fans. IC Role / Device Role / Timing Role: Half-bridge driver per phase, using tri-level PWM to simplify MCU GPIO usage and synchronize commutation timing. Use Value: Single-pin tri-level control reduces required MCU pins by 2 per bridge; 3A/4A drive ensures fast turn-on of 10nF+ gate loads at >20kHz PWM. |
| Active Clamp Forward Converters | Class-D Audio Amplifiers |
Use Scenario: Two-switch forward converter with active clamp reset in server PSU auxiliary supplies. IC Role / Device Role / Timing Role: Controls main power switches and clamp switch with independently adjustable dead times to manage resonance. Use Value: RDT pin allows fine-tuning of dead time per switch pair to optimize ZVS transition without compromising efficiency or EMI. | Use Scenario: High-efficiency 100W Class-D amplifier stage with 100V bus in professional audio equipment. IC Role / Device Role / Timing Role: Drives high-side/low-side output MOSFETs in full-bridge output stage with minimal propagation skew. Use Value: 2ns typical delay matching (between HO/LO paths) minimizes distortion-causing timing asymmetry in audio PWM signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HIP2211FRTZ | HI/LI dual-input interface; no VREF, RDT, or EN pins; same 10L TDFN package and 3A/4A drive specs | Requires separate high/low control signals; lacks programmable dead time and tri-level simplification | Select when existing controller uses discrete HI/LI outputs and no dead time tuning is needed |
| ISL2111IRZ | 8-lead SOIC package; 2A/2A drive; no integrated bootstrap diode; fixed 100ns dead time; 5–16V VDD range | Lower drive strength limits switching speed with large gate loads; external bootstrap diode required | Select for cost-sensitive, lower-power (<100W) applications where SOIC footprint is preferred and 100ns dead time suffices |
Compared with HIP2211FRTZ and ISL2111IRZ, the HIP2210FRTZ uniquely combines tri-level control, programmable dead time, and integrated bootstrap diode in a compact 4×4mm TDFN - making it optimal for space-constrained, high-efficiency 100V half-bridge designs requiring flexible timing control.
Availability
HIP2210FRTZ is available at Aetrix Electronics and suitable for telecom DC/DC converters, BLDC motor drivers, and active-clamp forward converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for HIP2210FRTZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.
The HIP2210 belongs to Renesas' high-voltage gate driver product line, engineered specifically for efficient, reliable, and compact 100V half-bridge power stages in high-frequency switched-mode power supplies and motor drives.
FAQ
What is the function of the RDT pin on the HIP2210FRTZ?
The RDT pin on the HIP2210FRTZ sets dead time between HO and LO transitions using an external resistor to VSS. With 10kΩ, dead time is ~36ns; with 100kΩ, it is ~360ns. Shorting RDT to VSS yields minimum 15ns dead time. This programmability prevents shoot-through in hard-switched topologies without requiring external timing circuitry - a key differentiator of the HIP2210FRTZ over fixed-dead-time drivers.
How does the tri-level PWM input of the HIP2210FRTZ differ from standard HI/LI inputs?
The tri-level PWM input of the HIP2210FRTZ uses a single pin to control both HO and LO: logic high turns on HO and off LO, logic low turns on LO and off HO, and mid-level (≈50% VREF) turns both off. This replaces dual HI/LI signals, reduces MCU pin count, and embeds dead time control - unlike HI/LI drivers such as the HIP2211FRTZ, which require external logic or controller coordination to avoid shoot-through.
What is the purpose of the VREF pin on the HIP2210FRTZ?
The VREF pin on the HIP2210FRTZ sets the voltage reference for tri-level PWM thresholds, enabling logic compatibility across 2.7V–5.5V systems. PWM high/mid/low thresholds scale proportionally to VREF (e.g., 66% and 33% of VREF), allowing seamless integration with 3.3V or 5V controllers. An internal 100kΩ pull-down holds VREF low if unconnected, disabling PWM functionality - ensuring fail-safe behavior in the HIP2210FRTZ.
Does the HIP2210FRTZ include an integrated bootstrap diode?
Yes, the HIP2210FRTZ includes an integrated 0.5Ω typical forward resistance bootstrap diode between VDD and HB pins. This eliminates the need for an external diode, reduces component count and PCB area, and improves reliability by removing a common failure point. The diode supports up to 115V bootstrap voltage and is rated for continuous 100mA current - fully enabling 100V half-bridge operation without external components.
What are the absolute maximum voltage ratings for the HS pin on the HIP2210FRTZ?
The HS pin on the HIP2210FRTZ has an absolute maximum continuous voltage rating of the greater of [–10V or –(20 – VDD)] to +120V, referenced to VSS. At VDD = 12V, this means HS can tolerate –10V to +120V. Its robust –10V continuous rating allows safe operation during negative voltage transients common in half-bridge node ringing - a critical reliability feature confirmed in the HIP2210FRTZ datasheet Absolute Maximum Ratings table.
HIP2210FRTZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- -
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6V ~ 18V
- Logic Voltage - VIL, VIH:
- 1.47V, 1.84V
- Current - Peak Output (Source, Sink):
- 3A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 115 V
- Rise / Fall Time (Typ):
- 20ns, 20ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-TDFN (4x4)
HIP2210FRTZ FAQ
1.How can I place an order for HIP2210FRTZ through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2210FRTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2210FRTZ reliable?
The price and inventory of HIP2210FRTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2210FRTZ is usually 5 days.
3.What payment methods are accepted for HIP2210FRTZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2210FRTZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2210FRTZ?
HIP2210FRTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2210FRTZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2210FRTZ?
For technical support, including HIP2210FRTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2210FRTZ requirements.
6.How does Aetrix verify that HIP2210FRTZ is sourced from the original manufacturer or authorized distributors?
All HIP2210FRTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2210FRTZ meets industry standards.
7.What is the process for return or replacement of HIP2210FRTZ?
All HIP2210FRTZ units undergo pre-shipment inspection (PSI). If there is an issue with HIP2210FRTZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2210FRTZ part is unused and in its original packaging.
Return procedure for HIP2210FRTZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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