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Renesas HIP2211FBZ-T
- Part No.:
- HIP2211FBZ-T
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
HIP2211FBZ-T.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,250
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Product details
Overview
HIP2211FBZ-T from Renesas is a 100V, 3A source / 4A sink high-frequency half-bridge NMOS gate driver with HI/LI inputs, 15ns typical propagation delay, 2ns typical delay matching, and integrated 0.5Ω bootstrap diode-designed for telecom DC/DC converters and BLDC motor drivers requiring precise timing control and shoot-through prevention.
For engineers reviewing the HIP2211FBZ-T datasheet, HIP2211FBZ-T pinout, HIP2211FBZ-T application, or HIP2211FBZ-T equivalent, this page delivers verified package mapping (8-pin SOIC), confirmed HI/LI logic compatibility with 3.3V systems, VDD UVLO thresholds (5.6V rise / 5.1V fall), bootstrap voltage support up to 115V, and validated drop-in replacement status versus ISL2111 and HIP2101 in identical SOIC-8 packaging.
Technical Context
The HIP2211FBZ-T implements dual independent gate drivers with level-shifted high-side control and robust noise immunity: HI and LI inputs tolerate VDD voltage and feature 0.7V hysteresis; HS pin withstands −10V continuous; and internal UVLO protects both VDD (5.6V rising) and bootstrap (5.1V rising) rails. Its architecture eliminates external bootstrap diodes and supports 100V half-bridge topologies without external level-shifting circuitry.
Unlike the tri-level PWM-based HIP2210, the HIP2211FBZ-T uses dedicated HI/LI inputs for direct, asynchronous control of high- and low-side FETs-enabling flexible dead-time insertion via external timing circuits or controller-level coordination. Propagation delays are tightly matched (±1.5ns typical) to minimize cross-conduction risk in high-frequency (>1MHz) switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Operating Range | 6V to 18V - supports wide-input industrial and telecom power supplies without external regulators |
| Max Bootstrap Voltage | 115V referenced to HS - enables reliable operation in 100V half-bridge configurations |
| Propagation Delay | 15ns typical - ensures sub-67MHz switching capability with minimal timing uncertainty |
| Delay Matching | 2ns typical - reduces overlap risk between HO and LO transitions, critical for shoot-through prevention |
| Output Drive Strength | 3A source / 4A sink - directly drives large gate capacitances (e.g., >5nF) with fast edge rates |
| Input Logic Compatibility | 3.3V-tolerant HI/LI with VDD voltage range - interoperates with standard microcontrollers and PWM controllers |
| VDD UVLO Threshold | 5.6V rising / 5.1V falling - prevents erratic operation during brown-out conditions in unregulated supplies |
Pinout & Package
Package: 8-lead SOIC (M8.15), RoHS-compliant, Pb-free NiPdAu-Ag e4 termination, MSL3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VDD | Analog supply input | Primary power for low-side driver and logic; requires 4.7µF + 0.1µF local decoupling to VSS |
| 2 HB | Bootstrap supply node | Connects to bootstrap capacitor anode; referenced to HS; max 115V above HS |
| 3 HO | High-side gate output | Drives gate of high-side NMOS; output swing = VHB − VHO (max 0.27V drop at 100mA) |
| 4 HS | High-side source reference | Connects to source of high-side FET; tolerates −10V continuous; bootstrap cap connects here |
| 5 HI | High-side logic input | VDD-tolerant 3.3V-compatible input; 1.4V low / 2.1V high threshold; 0.7V hysteresis |
| 6 LI | Low-side logic input | VDD-tolerant 3.3V-compatible input; identical thresholds and hysteresis as HI |
| 7 VSS | Ground reference | Return path for VDD supply; must be low-impedance connection to PCB ground plane |
| 8 LO | Low-side gate output | Drives gate of low-side NMOS; output swing = VDD − VOL_LO (max 0.17V drop at 100mA) |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | 0.5Ω typical forward resistance - eliminates external diode, reduces BOM count and layout area |
| Robust noise immunity | −10V HS tolerance + 0.7V input hysteresis - prevents false triggering in noisy motor drive or converter environments |
| Precision timing control | 15ns typical propagation delay with 2ns matching - enables stable operation up to 1MHz+ switching frequencies |
| Drop-in replacement capability | PIN-TO-PIN compatible with ISL2111 and HIP2101 in SOIC-8 - allows direct substitution without PCB changes |
| Wide supply range | 6V–18V VDD operation - supports 12V and 15V industrial rails and accommodates input ripple without regulation |
Applications
| Telecom DC/DC Converters | BLDC Motor Drivers |
|---|---|
Use Scenario: High-efficiency 48V-to-12V isolated half-bridge DC/DC converters in telecom rectifiers and base station power supplies. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling 100V-rated NMOS FETs; provides matched HO/LO timing to minimize conduction losses and EMI. Use Value: 115V bootstrap rating and 15ns propagation delay enable >95% efficiency at 500kHz while maintaining safe dead time margins. |
Use Scenario: 3-phase inverter stages driving brushless DC motors in HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: High- and low-side gate driver per phase leg; HI/LI inputs synchronized to MCU PWM outputs for precise commutation timing. Use Value: 4A sink current ensures rapid turn-off of large gate charges; −10V HS tolerance handles inductive kickback during regeneration. |
| Active Clamp Converters | Class-D Audio Amplifiers |
Use Scenario: Two-switch forward and active clamp flyback converters in server PSUs and LED drivers. IC Role / Device Role / Timing Role: Controls main switch and clamp switch with independent HI/LI inputs to coordinate clamping action and prevent transformer saturation. Use Value: VDD UVLO (5.6V rise) and bootstrap UVLO ensure clean startup and fault-safe shutdown during transient line dips. |
Use Scenario: High-fidelity Class-D amplifier output stages delivering >100W into 4Ω loads with low THD+N. IC Role / Device Role / Timing Role: Gate driver for half-bridge output stage; fast 20ns rise/fall times (1nF load) preserve PWM fidelity and reduce switching distortion. Use Value: 3A source/4A sink drive strength minimizes gate resistance requirements, enabling compact heatsink designs and improved thermal performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL2111IBZ-T | Identical 8-pin SOIC package; same HI/LI interface; 12ns propagation delay; no integrated bootstrap diode | Requires external bootstrap diode; slightly faster but higher BOM cost and layout complexity | Select when absolute minimum propagation delay is prioritized and external diode integration is acceptable |
| HIP2101IBZ-T | Same pinout and function; 16ns propagation delay; 0.6Ω bootstrap diode; 110V max bootstrap voltage | Slightly lower bootstrap voltage rating and slower timing; legacy part with longer lead times | Select for legacy design continuity where 110V bootstrap margin suffices and sourcing favors established stock |
Compared with ISL2111IBZ-T and HIP2101IBZ-T, the HIP2211FBZ-T offers superior integration (on-chip 0.5Ω diode), tighter timing (15ns/2ns vs 12ns/- and 16ns/-), and higher bootstrap voltage (115V vs 110V), making it optimal for new designs targeting reliability, layout simplicity, and 100V system margin.
Availability
HIP2211FBZ-T is available at Aetrix Electronics and suitable for telecom power supplies, BLDC motor inverters, and active-clamp converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for HIP2211FBZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and timing solutions for automotive, industrial, and infrastructure markets.
The HIP2211 belongs to Renesas' high-voltage gate driver product line, engineered specifically for robust, high-frequency half-bridge control in 100V-class power conversion systems with emphasis on integration, noise immunity, and drop-in replaceability.
FAQ
What is the maximum bootstrap voltage supported by the HIP2211FBZ-T?
The HIP2211FBZ-T supports a maximum bootstrap voltage of 115V referenced to the HS pin, enabling reliable operation in 100V half-bridge topologies. This rating is specified in the Absolute Maximum Ratings table (page 6) and confirmed under Recommended Operating Conditions (page 7) as "Bootstrap Voltage, HB Referenced to HS" up to +115V. Exceeding this limit risks permanent damage to the internal bootstrap diode and level-shifter circuitry.
Is the HIP2211FBZ-T pin-compatible with the ISL2111 and HIP2101?
Yes, the HIP2211FBZ-T is explicitly documented as pin-compatible with both the ISL2111 and HIP2101 in the 8-lead SOIC package (M8.15). The datasheet states "HIP2211 is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111" and confirms identical pin numbering and functions in Section 1.3 (Pin Configurations) and Table 1-4 (Pin Descriptions). No PCB modifications are required for direct substitution.
Does the HIP2211FBZ-T include an integrated bootstrap diode?
Yes, the HIP2211FBZ-T integrates a 0.5Ω typical forward resistance bootstrap diode, eliminating the need for an external discrete diode. This is confirmed in the Features section ("Integrated 0.5Ω typical bootstrap diode") and Electrical Specifications (page 9), where forward voltage (VFH = 0.85V typ at 100mA) and dynamic resistance (RD = 0.5Ω typ) are specified. The diode connects internally between VDD and HB pins.
What are the VDD undervoltage lockout (UVLO) thresholds for the HIP2211FBZ-T?
The HIP2211FBZ-T has a VDD UVLO rising threshold of 5.6V (typical) and falling threshold of 5.1V (typical), with 0.5V hysteresis. These values are specified in Section 2.4 (Electrical Specifications, page 8) under "Undervoltage Protection." Operation is disabled below the falling threshold and re-enabled only after VDD rises above the rising threshold, preventing erratic behavior during brown-out conditions.
Can the HIP2211FBZ-T drive both high-side and low-side NMOS FETs in a half-bridge configuration?
Yes, the HIP2211FBZ-T is designed specifically to drive both high-side and low-side NMOS FETs in a half-bridge topology. It provides independent HO and LO outputs with 3A source / 4A sink capability, level-shifted high-side drive via the HB/HS nodes, and integrated bootstrap diode support. The datasheet's Figure 1 (page 1) shows its use in a 100V half-bridge DC/DC converter, confirming full dual-FET control capability.
HIP2211FBZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6V ~ 18V
- Logic Voltage - VIL, VIH:
- 1.47V, 1.84V
- Current - Peak Output (Source, Sink):
- 3A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 115 V
- Rise / Fall Time (Typ):
- 20ns, 20ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
HIP2211FBZ-T FAQ
1.How can I place an order for HIP2211FBZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2211FBZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2211FBZ-T reliable?
The price and inventory of HIP2211FBZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2211FBZ-T is usually 5 days.
3.What payment methods are accepted for HIP2211FBZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2211FBZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2211FBZ-T?
HIP2211FBZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2211FBZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2211FBZ-T?
For technical support, including HIP2211FBZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2211FBZ-T requirements.
6.How does Aetrix verify that HIP2211FBZ-T is sourced from the original manufacturer or authorized distributors?
All HIP2211FBZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2211FBZ-T meets industry standards.
7.What is the process for return or replacement of HIP2211FBZ-T?
All HIP2211FBZ-T units undergo pre-shipment inspection (PSI). If there is an issue with HIP2211FBZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2211FBZ-T part is unused and in its original packaging.
Return procedure for HIP2211FBZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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