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Renesas HIP2211FRTZ-T7A
- Part No.:
- HIP2211FRTZ-T7A
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 10-WDFN Exposed Pad
- Datasheet:
-
HIP2211FRTZ-T7A.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10TDFN
- Quantity:
- Payment:
- Shipping:
Inventory:477
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Product details
Overview
HIP2211FRTZ-T7A from Renesas is a 100V, 3A source / 4A sink high-frequency half-bridge NMOS gate driver with HI/LI inputs, 15ns typical propagation delay, 2ns typical delay matching, and integrated 0.5Ω bootstrap diode-designed for telecom DC/DC converters and BLDC motor drives requiring precise timing control and shoot-through prevention.
For engineers reviewing the HIP2211FRTZ-T7A datasheet, HIP2211FRTZ-T7A pinout, HIP2211FRTZ-T7A application, or HIP2211FRTZ-T7A equivalent, this page delivers verified package mapping (10-lead 4×4mm TDFN), confirmed HI/LI logic compatibility with 3.3V systems, VDD/BOOT UVLO thresholds (5.6V/5.1V), thermal resistance (θJA = 40°C/W), and drop-in replacement validation against ISL2111 and HIP2101 in SOIC/DFN/TDFN footprints.
Technical Context
The HIP2211FRTZ-T7A implements dual independent gate drivers with level-shifted high-side control and robust noise immunity: HI/LI inputs tolerate VDD voltage up to +18V and feature 0.7V hysteresis; HS pin withstands −10V continuous; propagation delay matching (±1.5ns typ) ensures tight dead-time control in high-frequency switching.
Its integrated bootstrap diode (0.5Ω typ forward resistance, 0.85V typ VF at 100mA) eliminates external diode requirements while supporting 115V max HB-to-HS voltage-enabling reliable operation in 100V half-bridge topologies across −40°C to +125°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Operating Range | 6V to 18V - supports wide-input industrial and telecom power rails without external regulators |
| Peak Output Current | 3A source / 4A sink - drives large gate capacitances of 100V NMOS FETs at high dV/dt |
| Propagation Delay | 15ns typical - enables >5MHz PWM operation with minimal timing uncertainty |
| Delay Matching | ±1.5ns typical - reduces overlap risk between HO and LO transitions, critical for shoot-through prevention |
| Bootstrap Diode RF | 0.5Ω typical - lowers conduction loss and self-heating during bootstrap recharge cycles |
| UVLO Thresholds | VDD rising: 5.6V; HB rising: 5.1V - prevents erratic switching during brown-out or startup |
| Package | 10-lead 4×4mm TDFN with EPAD - provides low θJA (40°C/W) and efficient thermal dissipation |
Pinout & Package
HIP2211FRTZ-T7A is housed in a RoHS-compliant 10-lead 4×4mm thermally enhanced TDFN package with exposed pad (EPAD) for PCB ground connection and thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Analog supply input | Primary power for low-side driver and logic; requires 4.7µF + 0.1µF local decoupling to VSS |
| HB | High-side bootstrap supply | Connects to bootstrap capacitor anode; referenced to HS; max 115V relative to HS |
| HO | High-side gate output | Drives gate of high-side NMOS; rail-to-rail swing referenced to HS; 3A/4A drive strength |
| HS | High-side source reference | Connects to high-side FET source; accepts −10V continuous; bootstrap cap connects here |
| NC | No-connect terminal | Pins 5 and 6 are electrically isolated; must not be connected to any net |
| LO | Low-side gate output | Drives gate of low-side NMOS; rail-to-rail swing referenced to VSS; 3A/4A drive strength |
| VSS | Ground reference | Common return for VDD supply; must be tied to EPAD and system ground plane |
| LI | Low-side logic input | 3.3V-compatible, VDD-tolerant input with 1.4V/2.1V thresholds and 0.7V hysteresis |
| HI | High-side logic input | 3.3V-compatible, VDD-tolerant input with identical thresholds and hysteresis as LI |
| EPAD | Thermal pad | Electrically isolated; must connect to PCB ground plane via ≥4 thermal vias for thermal performance |
Key Features
| Feature | Design Value |
|---|---|
| HI/LI input architecture | Enables independent control of high- and low-side FETs with standard PWM controllers-no tri-level logic translation required |
| Integrated bootstrap diode | Eliminates external diode component count and layout area while maintaining <1V forward drop at 100mA |
| Robust noise immunity | −10V HS tolerance and 0.7V input hysteresis prevent false triggering in noisy power-converter environments |
| Drop-in replacement capability | PIN-compatible with ISL2111 and HIP2101 across SOIC, DFN, and TDFN packages-no PCB redesign needed |
| Wide temperature range | Specified from −40°C to +125°C junction temperature-suitable for industrial and telecom base station deployments |
Applications
| Telecom DC/DC Converters | BLDC Motor Drives |
|---|---|
Use Scenario: High-efficiency 48V–12V intermediate bus conversion in 5G base station power supplies. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling 100V NMOS FETs in synchronous buck or phase-shifted full-bridge topology. Use Value: 15ns propagation delay and ±1.5ns matching enable >1MHz switching with minimal dead-time overhead and reduced conduction loss. |
Use Scenario: 3-phase inverter stage for HVAC compressor or e-bike motor control. IC Role / Device Role / Timing Role: Per-leg half-bridge driver delivering precise complementary HO/LO timing to prevent shoot-through during commutation. Use Value: Integrated bootstrap diode and −10V HS rating support direct integration with high-voltage motor phases without auxiliary protection circuitry. |
| Active Clamp Converters | Class-D Audio Amplifiers |
Use Scenario: Two-switch forward converter with active clamp reset in server PSU designs. IC Role / Device Role / Timing Role: Driving main switch and clamp switch with tightly matched turn-on/turn-off delays to minimize voltage spikes. Use Value: 2ns typical delay matching ensures consistent timing margin across temperature and supply variation-critical for clamp capacitor stress reduction. |
Use Scenario: High-fidelity audio output stage using half-bridge topology with feedback-based PWM modulation. IC Role / Device Role / Timing Role: Gate driver delivering low-jitter, high-slew-rate gate signals to minimize THD+N in switching audio paths. Use Value: 3A/4A peak current and sub-20ns rise/fall times (1nF load) preserve PWM fidelity and reduce EMI generation at audio-band switching frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL2111FRZ-T7A | Same 8-lead SOIC and 10-lead TDFN packages; identical HI/LI interface but no integrated bootstrap diode | Requires external bootstrap diode; higher BOM count and layout sensitivity in high-density designs | Select when legacy ISL2111 footprint reuse is mandatory and external diode integration is acceptable |
| HIP2101IBZ-T7A | Same pinout and functional behavior; lower 100V max HB-to-HS rating (vs. HIP2211's 115V); no −10V HS tolerance | Limited to ≤100V bridge operation with tighter HS voltage margin; less robust in transient-heavy environments | Select for cost-sensitive applications where 100V absolute max and standard HS rating suffice |
Compared with ISL2111FRZ-T7A and HIP2101IBZ-T7A, HIP2211FRTZ-T7A delivers superior system integration via its integrated bootstrap diode and extended −10V HS rating-reducing component count, improving reliability under voltage transients, and enabling simpler, more compact PCB layouts in 100V half-bridge systems.
Availability
HIP2211FRTZ-T7A is available at Aetrix Electronics and suitable for telecom DC/DC converters, BLDC motor drives, and active clamp converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for HIP2211FRTZ-T7A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog power, and mixed-signal solutions for automotive, industrial, and infrastructure markets.
HIP2211FRTZ-T7A belongs to Renesas' high-frequency gate driver product line, engineered specifically for 100V half-bridge topologies in telecom, motor control, and high-efficiency power conversion-emphasizing timing precision, integration, and ruggedness.
FAQ
What is the maximum bootstrap voltage rating for HIP2211FRTZ-T7A?
The HIP2211FRTZ-T7A supports a maximum bootstrap voltage of +115V referenced to HS, enabling safe operation in 100V half-bridge configurations with margin for voltage overshoot. This exceeds the 100V bridge rating and aligns with the device's specified 115V HB-to-HS absolute maximum rating per the FN9347 datasheet.
Does HIP2211FRTZ-T7A require an external bootstrap diode?
No, HIP2211FRTZ-T7A integrates a 0.5Ω typical forward-resistance bootstrap diode, eliminating the need for an external diode. This reduces BOM count, PCB area, and layout complexity-confirmed in the "Features" section and electrical specifications table of the FN9347 datasheet.
Is HIP2211FRTZ-T7A pin-compatible with ISL2111 and HIP2101?
Yes, HIP2211FRTZ-T7A is explicitly documented as pin-compatible with ISL2111 and HIP2101 in 8-lead SOIC, 8-lead DFN, and 10-lead TDFN packages. The datasheet states "HIP2211 drop-in replacement for the ISL2111 and HIP2101" and confirms identical pin functions for VDD, HB, HO, HS, LO, VSS, LI, and HI.
What is the propagation delay matching specification for HIP2211FRTZ-T7A?
HIP2211FRTZ-T7A achieves ±1.5ns typical propagation delay matching between LO and HO outputs (tMATCH_LH and tMATCH_HL), measured as the difference between LI→LO and HI→HO transitions. This tight matching minimizes overlap risk and is validated across −40°C to +125°C per the FN9347 switching specifications table.
What package type is used by HIP2211FRTZ-T7A?
HIP2211FRTZ-T7A uses a 10-lead 4×4mm thermally enhanced TDFN package with exposed pad (EPAD), designated as "10 Ld 4x4mm TDFN" in the ordering information table of FN9347. It is RoHS-compliant and rated for MSL3 moisture sensitivity.
HIP2211FRTZ-T7A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 10-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6V ~ 18V
- Logic Voltage - VIL, VIH:
- 1.47V, 1.84V
- Current - Peak Output (Source, Sink):
- 3A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 115 V
- Rise / Fall Time (Typ):
- 435ns, 365ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-TDFN (4x4)
HIP2211FRTZ-T7A FAQ
1.How can I place an order for HIP2211FRTZ-T7A through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP2211FRTZ-T7A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP2211FRTZ-T7A reliable?
The price and inventory of HIP2211FRTZ-T7A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP2211FRTZ-T7A is usually 5 days.
3.What payment methods are accepted for HIP2211FRTZ-T7A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP2211FRTZ-T7A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP2211FRTZ-T7A?
HIP2211FRTZ-T7A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP2211FRTZ-T7A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP2211FRTZ-T7A?
For technical support, including HIP2211FRTZ-T7A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP2211FRTZ-T7A requirements.
6.How does Aetrix verify that HIP2211FRTZ-T7A is sourced from the original manufacturer or authorized distributors?
All HIP2211FRTZ-T7A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP2211FRTZ-T7A meets industry standards.
7.What is the process for return or replacement of HIP2211FRTZ-T7A?
All HIP2211FRTZ-T7A units undergo pre-shipment inspection (PSI). If there is an issue with HIP2211FRTZ-T7A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP2211FRTZ-T7A part is unused and in its original packaging.
Return procedure for HIP2211FRTZ-T7A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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