My Inquiry
My Account
Renesas HIP6603BECB
- Part No.:
- HIP6603BECB
- Manufacturer:
- Renesas
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Datasheet:
-
HIP6603BECB.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,965
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HIP6603BECB from Intersil is a dual N-channel MOSFET gate driver IC designed for synchronous rectified buck converters, delivering 5V–12V upper and lower gate drive voltages, 30ns UGATE turn-off propagation delay, 50ns LGATE rise time, and adaptive shoot-through protection. It enables high-frequency core-voltage regulation for microprocessor power delivery.
For engineers reviewing the HIP6603BECB datasheet, HIP6603BECB pinout, HIP6603BECB application, or HIP6603BECB equivalent, key selection criteria include dual-rail gate voltage flexibility (5V–12V), bootstrap-based high-side drive with external capacitor only, 2MHz max switching frequency support, and EPSOIC-8 package thermal performance (θJA = 38°C/W).
Technical Context
The HIP6603BECB implements independent control of both high-side and low-side N-MOSFETs using a single PWM input, with adaptive shoot-through protection triggered by LGATE voltage crossing 2.2V and PHASE voltage dropping below 0.5V. Its internal bootstrap device eliminates need for external diode.
It supports three-state PWM input with 1.4V–3.6V shutdown window and 230ns holdoff time, plus power-on reset with 9.95V rising and 7.6V falling VCC thresholds. Gate drive strength is specified at 1.1–5.0Ω source/sink impedance across 5V–12V PVCC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Supply Current | 2.5–3.6 mA at 1MHz, enabling low-bias-power operation in multi-phase VRMs |
| PVCC Range | 5V to 12V - sets both upper and lower gate drive rails simultaneously |
| UGATE Propagation Delay | 30 ns - ensures precise timing alignment between PWM edge and high-side turn-off |
| LGATE Rise Time | 50 ns with 3nF load - balances switching speed and EMI control for low-voltage, high-current outputs |
| Bootstrap Voltage Support | VBOOT − VPHASE ≤ 15V - allows safe high-side drive in 12V-input buck stages |
| Thermal Resistance θJA | 38°C/W (EPSOIC) - supports >800mW dissipation in compact layouts without forced airflow |
| Operating Temperature | 0°C to +85°C ambient - validated for industrial-grade CPU/GPU core supply environments |
Pinout & Package
HIP6603BECB uses an 8-lead Exposed Pad Small Outline Integrated Circuit (EPSOIC) package per JEDEC MO-220 M8.15B outline, with bottom thermal pad requiring PCB soldering for thermal integrity and electrical grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE (Pin 1) | High-side gate drive output | Drives N-MOSFET gate referenced to PHASE node; requires bootstrap capacitor for level-shifting |
| BOOT (Pin 2) | Floating bootstrap supply | Connects to external capacitor between BOOT and PHASE to generate high-side gate bias above input rail |
| PWM (Pin 3) | Control input | Accepts TTL/CMOS-level PWM signal; includes 1.4–3.6V shutdown window and adaptive dead-time control |
| GND (Pin 4) | Bias reference ground | Common return for VCC, logic, and internal circuitry; separate from power ground |
| LGATE (Pin 5) | Low-side gate drive output | Directly drives N-MOSFET gate referenced to GND; sink/source capable up to 730mA |
| VCC (Pin 6) | Bias supply input | +12V ±10% supply for internal logic and level-shifter; bypass capacitor required |
| PVCC (Pin 7) | Power gate drive supply | Supplies both upper and lower drivers; 5V–12V range enables conduction/switching loss trade-off optimization |
| PHASE (Pin 8) | Switch node connection | Connects to source of high-side MOSFET and drain of low-side MOSFET; monitored for adaptive shoot-through protection |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-MOSFET drive capability | Enables cost-effective, high-efficiency synchronous buck topology without P-channel or external level shifters |
| Adaptive shoot-through protection | Monitors LGATE and PHASE in real time to dynamically adjust dead time-no fixed timing components needed |
| Integrated bootstrap device | Eliminates external bootstrap diode; reduces BOM count and layout area while maintaining 2MHz operation |
| Three-state PWM input | Allows full output stage shutdown via PWM voltage window-enables seamless VRM sleep-state entry/exit |
| Supply undervoltage lockout | 9.95V POR rising threshold prevents erratic gate behavior during brown-out or soft-start conditions |
Applications
| Core Voltage Regulation for x86 Microprocessors | High-Frequency DC/DC Converters |
|---|---|
Use Scenario: Providing tightly regulated 1.0–1.5V core supply to Intel Pentium® III or AMD® Athlon™ CPUs under dynamic load transients. IC Role / Device Role / Timing Role: Dual gate driver coordinating high-side/low-side N-MOSFET switching with adaptive dead time to minimize body-diode conduction loss. Use Value: Enables >90% efficiency at 1MHz+ switching with 30ns propagation delay and 50ns LGATE rise time-critical for transient response and thermal management. | Use Scenario: Compact, low-profile point-of-load converter in telecom or server board space-constrained designs. IC Role / Device Role / Timing Role: High-speed gate driver supporting 2MHz operation with minimal propagation skew between UGATE and LGATE outputs. Use Value: Achieves fast transient recovery and reduced output capacitance requirements due to tight timing control and 38°C/W thermal resistance in EPSOIC package. |
| Multi-Phase CPU Voltage Regulators | High-Current Low-Voltage Power Supplies |
Use Scenario: One phase in a 3+ phase VRM using HIP63xx or ISL65xx controllers driving parallel MOSFETs per phase. IC Role / Device Role / Timing Role: Synchronized gate driver receiving PWM from multi-phase controller; PVCC voltage selection optimizes FET RDS(on) vs. Qg trade-off. Use Value: Dual-rail 5V–12V drive flexibility allows matching gate voltage to selected MOSFETs-reducing total power loss across phases. | Use Scenario: 50A+ core supply for FPGA or ASIC with <1.2V output, requiring low conduction loss and robust shoot-through immunity. IC Role / Device Role / Timing Role: Robust gate driver with integrated adaptive protection and 730mA LGATE sink current to drive large paralleled MOSFET banks. Use Value: Eliminates external shoot-through prevention logic and supports high peak currents without gate oscillation-verified up to 3nF load at 2MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-MOSFET gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL6609IRZ | QFN-16 package; higher 1.2A LGATE sink; no three-state PWM input | Supports higher current density but lacks shutdown window functionality | Preferred when higher drive strength is needed and shutdown control is handled externally |
| LM5109BMMX/NOPB | SOIC-8; 5V-only PVCC; no adaptive shoot-through-uses fixed dead time | Simpler implementation but less efficient under wide load/transient conditions | Selected for cost-sensitive, lower-frequency (<500kHz) applications where adaptive timing is not critical |
Compared with ISL6609IRZ and LM5109BMMX/NOPB, HIP6603BECB uniquely combines EPSOIC-8 thermal performance (38°C/W), 5–12V dual-rail flexibility, and adaptive shoot-through-making it optimal for high-efficiency, thermally constrained microprocessor VRMs where dynamic dead-time adjustment improves light-load efficiency.
Availability
HIP6603BECB is available at Aetrix Electronics and suitable for core voltage regulation, high-frequency DC/DC conversion, and multi-phase CPU power delivery requiring stable component supply and long-term industrial availability.
Supply support for HIP6603BECB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Intersil Corporation is a precision analog and power management semiconductor company, now part of Renesas Electronics, specializing in high-performance power delivery solutions for computing and infrastructure markets.
HIP6603BECB belongs to the HIP660xB family of synchronous buck gate drivers, engineered specifically for high-efficiency, high-frequency core-voltage regulation in advanced microprocessor platforms.
FAQ
What is the maximum switching frequency supported by the HIP6603BECB?
The HIP6603BECB supports switching frequencies up to 2MHz, verified with 3000pF load, 30ns propagation delay, and 50ns transition times. This capability is enabled by its low-impedance gate drivers (1.1–5.0Ω) and optimized internal architecture-making HIP6603BECB suitable for high-density, high-efficiency VRMs where fast transient response is critical.
Does the HIP6603BECB require an external bootstrap diode?
No, the HIP6603BECB integrates an internal bootstrap device, eliminating the need for an external diode. Only an external bootstrap capacitor between BOOT and PHASE pins is required. This reduces component count, PCB area, and potential failure points-confirmed in the HIP6603BECB datasheet Figure 1 and "Internal Bootstrap Device" section on page 8.
What is the purpose of the three-state PWM input on the HIP6603BECB?
The three-state PWM input on HIP6603BECB enables full output stage shutdown when the PWM signal remains within the 1.4V–3.6V shutdown window for ≥230ns. During shutdown, both UGATE and LGATE are actively pulled low. This feature allows seamless integration into processor sleep-state protocols without requiring external enable logic-directly supported by HIP6603BECB's internal control architecture.
How does adaptive shoot-through protection work in the HIP6603BECB?
HIP6603BECB monitors LGATE voltage during turn-off and releases UGATE only after LGATE drops below 2.2V; during UGATE turn-off, it monitors PHASE and releases LGATE only after PHASE falls below 0.5V. This real-time, voltage-threshold-based sequencing-described in the "Adaptive Shoot-Through Protection" section-ensures no simultaneous conduction, unlike fixed-dead-time drivers. HIP6603BECB implements this entirely internally with no external components.
What package type and thermal characteristics apply to the HIP6603BECB?
HIP6603BECB uses the 8-lead EPSOIC package (JEDEC MO-220 M8.15B) with exposed thermal pad. Its thermal resistance is θJA = 38°C/W under standard test conditions-significantly lower than SOIC-8 (97°C/W)-enabling higher power dissipation (>800mW) in compact layouts. The bottom pad must be soldered to the PCB for thermal and electrical integrity, as specified in the HIP6603BECB datasheet page 3.
HIP6603BECB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 15 V
- Rise / Fall Time (Typ):
- 20ns, 20ns
- Operating Temperature:
- 0°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC-EP
HIP6603BECB FAQ
1.How can I place an order for HIP6603BECB through Aetrix?
Please submit a Request for Quotation (RFQ) for HIP6603BECB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HIP6603BECB reliable?
The price and inventory of HIP6603BECB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HIP6603BECB is usually 5 days.
3.What payment methods are accepted for HIP6603BECB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HIP6603BECB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HIP6603BECB?
HIP6603BECB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HIP6603BECB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HIP6603BECB?
For technical support, including HIP6603BECB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HIP6603BECB requirements.
6.How does Aetrix verify that HIP6603BECB is sourced from the original manufacturer or authorized distributors?
All HIP6603BECB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HIP6603BECB meets industry standards.
7.What is the process for return or replacement of HIP6603BECB?
All HIP6603BECB units undergo pre-shipment inspection (PSI). If there is an issue with HIP6603BECB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HIP6603BECB part is unused and in its original packaging.
Return procedure for HIP6603BECB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HIP6603BECB Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
