Toshiba Semiconductor and Storage HN1A01FE-GR,LF

Overview

HN1A01FE-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual PNP bipolar junction transistor in an ES6 surface-mount package, rated for VCEO = −50 V, IC = −150 mA (max), and hFE = 200–400 (GR grade). It delivers high hFE linearity (0.95 typ.) and is AEC-Q101 qualified for automotive applications including low-frequency amplifiers and signal switching circuits.

For engineers reviewing the HN1A01FE-GR,LF datasheet, HN1A01FE-GR,LF pinout, HN1A01FE-GR,LF application, or HN1A01FE-GR,LF equivalent, key selection criteria include dual-transistor symmetry, guaranteed hFE binning (GR), AEC-Q101 qualification status, ES6 package thermal and layout constraints, and verified VCE(sat) ≤ −0.3 V at IC = −100 mA/IB = −10 mA.

Technical Context

This device integrates two matched silicon PNP epitaxial transistors in a single compact ES6 package, sharing no internal connection between channels-each transistor operates independently with identical absolute maximum ratings and electrical characteristics. Its design supports discrete analog signal conditioning where dual complementary or identical gain stages are required without cross-coupling.

The GR hFE bin (200–400) ensures tighter DC current gain distribution than the Y bin (120–240), improving consistency in biasing and amplifier gain stability across production lots. Electrical behavior is characterized at Ta = 25 °C with common test conditions applied to both transistors (Q1 and Q2), enabling predictable dual-channel performance in linear and switching modes.

Key Specifications

Pinout & Package

HN1A01FE-GR,LF uses the ES6 (SOT-363) 6-pin ultra-small surface-mount package, measuring 2.0 × 1.25 × 0.9 mm (typ.), with a typical weight of 3.0 mg. The package supports reflow soldering per JEDEC J-STD-020 and is RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Compared with HN1A01FE-GR,LF, NSV6058MR6T1G lacks dual integration and automotive qualification, while UMT2907A offers higher voltage rating but looser hFE control-making HN1A01FE-GR,LF optimal for space-constrained, gain-stable automotive amplifiers requiring certified reliability.

Availability

HN1A01FE-GR,LF is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and low-frequency audio signal chains requiring stable component supply and AEC-Q101 assurance.

Supply support for HN1A01FE-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.

HN1A01FE-GR,LF belongs to Toshiba's AEC-Q101-qualified bipolar transistor family, engineered specifically for space-efficient, high-linearity analog signal processing in harsh-environment automotive and industrial control systems.

FAQ

What does the "GR" suffix indicate in HN1A01FE-GR,LF?

The "GR" suffix denotes the hFE gain bin for HN1A01FE-GR,LF: a guaranteed DC current gain range of 200 to 400 at VCE = −6 V and IC = −2 mA. This tighter bin improves consistency in amplifier biasing and reduces unit-to-unit gain variation compared to the Y-bin (120–240), making HN1A01FE-GR,LF especially suitable for precision analog designs where predictable transistor behavior is critical.

Is HN1A01FE-GR,LF qualified for automotive applications?

Yes, HN1A01FE-GR,LF is explicitly AEC-Q101 qualified per Toshiba's official orderable part number list and datasheet Rev. 2.0.A. This qualification covers stress tests including temperature cycling, humidity bias, mechanical shock, and high-temperature operating life-ensuring suitability for under-hood and cabin automotive modules. The "GR" variant is approved for automotive use, unlike general-purpose variants marked "Y".

What is the thermal performance of HN1A01FE-GR,LF in the ES6 package?

HN1A01FE-GR,LF in the ES6 package has a total rated collector power dissipation (PC) of 100 mW at Ta = 25 °C, derating linearly above that ambient temperature. Its junction-to-ambient thermal resistance (RθJA) is approximately 1,250 °C/W, meaning a 100 mW load raises junction temperature by ~125 °C above ambient. For reliable operation, keep ambient temperature below 70 °C or reduce power dissipation accordingly-HN1A01FE-GR,LF is intended for low-power linear and switching roles, not continuous high-current duty.

How are the two transistors inside HN1A01FE-GR,LF connected internally?

HN1A01FE-GR,LF contains two fully independent silicon PNP epitaxial transistors with no internal electrical connection between them. Pin 1 (Emitter1), Pin 2 (Base1), and Pin 6 (Collector1) form one transistor; Pin 4 (Emitter2), Pin 5 (Base2), and Pin 3 (Collector2) form the second. This isolation allows separate biasing, independent signal paths, and true redundancy-critical for fault-tolerant designs where shared failure modes must be avoided.

Does HN1A01FE-GR,LF support lead-free reflow soldering?

Yes, HN1A01FE-GR,LF is RoHS compliant and rated for lead-free reflow soldering per JEDEC J-STD-020. Its ES6 package withstands peak reflow temperatures up to 260 °C for 10 seconds. The ",LF" suffix confirms lead-free termination finish (matte tin), and the device meets IPC/JEDEC standard moisture sensitivity level (MSL) 1-no dry-pack requirement prior to assembly. Always follow Toshiba's recommended profile to avoid thermal damage to the die or bond wires.