Toshiba Semiconductor and Storage HN1A01FE-GR,LXHF

Overview

HN1A01FE-GR,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual PNP bipolar junction transistor in ES6 package, rated for VCEO = −50 V, IC = −150 mA (max), and hFE = 200–400 (GR grade), designed for low-frequency amplifier stages in automotive and industrial signal conditioning circuits.

For engineers reviewing the HN1A01FE-GR,LXHF datasheet, HN1A01FE-GR,LXHF pinout, HN1A01FE-GR,LXHF application, or HN1A01FE-GR,LXHF equivalent, key selection criteria include AEC-Q101 qualification status, dual-transistor symmetry, hFE linearity at low currents, and thermal derating behavior in compact surface-mount layouts.

Technical Context

This device integrates two matched silicon PNP transistors in a single ES6 package with shared thermal coupling. Each transistor supports common-emitter operation up to −50 V collector-emitter voltage and delivers DC current gain (hFE) of 200–400 under VCE = −6 V, IC = −2 mA conditions.

It exhibits excellent hFE linearity-ratio hFE(IC = −0.1 mA)/hFE(IC = −2 mA) = 0.95 (typ.)-and transition frequency fT = 80 MHz (typ.) at VCE = −10 V, IC = −1 mA, enabling stable gain in audio and sensor interface amplifiers without high-frequency compensation.

Key Specifications

Pinout & Package

HN1A01FE-GR,LXHF uses the ES6 surface-mount package (3.0 mg typical weight), a 6-pin dual-transistor configuration with symmetrical layout optimized for matched pair operation and thermal tracking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Compared with NSVD2003MXV6T1G and UMT2907A, HN1A01FE-GR,LXHF uniquely combines AEC-Q101 qualification, GR-grade hFE binning (200–400), and verified hFE linearity-making it the only option among the three suitable for automotive cabin sensor amplifiers requiring long-term parametric stability.

Availability

HN1A01FE-GR,LXHF is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial current monitoring, audio signal conditioning, and low-power sensor interface applications requiring stable component supply across extended temperature ranges and lifecycle continuity.

Supply support for HN1A01FE-GR,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures power semiconductors, discrete devices, and analog ICs with emphasis on reliability, efficiency, and automotive-grade validation.

HN1A01FE-GR,LXHF belongs to Toshiba's AEC-Q101-qualified bipolar transistor family, engineered specifically for low-frequency analog signal amplification in harsh-environment automotive and industrial control systems.

FAQ

What does the "GR" suffix indicate in HN1A01FE-GR,LXHF?

The "GR" suffix denotes the hFE gain bin: 200–400 at VCE = −6 V and IC = −2 mA. This tighter binning improves predictability in bias-critical applications like differential amplifiers. HN1A01FE-GR,LXHF maintains this specification across its full operating temperature range and is validated per AEC-Q101 stress tests.

Is HN1A01FE-GR,LXHF suitable for automotive applications?

Yes-HN1A01FE-GR,LXHF is explicitly AEC-Q101 qualified, with test reports covering temperature cycling, high-temperature operating life, and ESD robustness. Its −50 V VCEO rating and operation up to +150 °C junction temperature meet requirements for non-safety-critical automotive cabin electronics, such as HVAC sensors and infotainment auxiliary amplifiers.

How is thermal coupling managed between the two transistors in HN1A01FE-GR,LXHF?

HN1A01FE-GR,LXHF integrates both PNP transistors on a single silicon die within the ES6 package, ensuring tight thermal coupling. This minimizes ΔT between Q1 and Q2 during dynamic operation, preserving hFE and VBE matching critical for differential pair stability. Thermal resistance (junction-to-case) is not specified separately but is optimized for the 100 mW total PC rating.

What is the meaning of "LXHF" in the full part number HN1A01FE-GR,LXHF?

"LXHF" indicates lead-free (Pb-free), halogen-free, and RoHS-compliant packaging per Toshiba's environmental specifications. It confirms compliance with EU RoHS Directive 2011/65/EU and JEDEC JS-709E, with material declarations available upon request. HN1A01FE-GR,LXHF contains no intentionally added brominated flame retardants or chlorine above threshold limits.

Can HN1A01FE-GR,LXHF replace single-transistor PNP devices in existing designs?

HN1A01FE-GR,LXHF can replace two discrete PNP transistors (e.g., 2SA1015 or BC807) in space-constrained layouts, but pin mapping differs: pins 1–2–6 form Q1 (E–B–C), while pins 4–5–3 form Q2 (E–B–C). Layout revision is required. HN1A01FE-GR,LXHF offers improved matching and reduced parasitic inductance versus dual-discrete solutions.