Toshiba Semiconductor and Storage HN1A01FE-Y,LF

Overview

HN1A01FE-Y,LF from Toshiba Electronic Devices & Storage Corporation is a dual PNP bipolar junction transistor in an ES6 package, rated for VCEO = −50 V, IC = −150 mA (max), and hFE = 120–400. It supports low-frequency amplifier applications with excellent hFE linearity and AEC-Q101 qualification for automotive use.

For engineers reviewing the HN1A01FE-Y,LF datasheet, HN1A01FE-Y,LF pinout, HN1A01FE-Y,LF application, or HN1A01FE-Y,LF equivalent, key selection criteria include dual-transistor configuration, AEC-Q101 compliance, −50 V breakdown voltage, −150 mA collector current capability, and ES6 small-outline surface-mount package compatibility.

Technical Context

This device integrates two identical silicon PNP epitaxial transistors in a single ES6 package, sharing no internal connection between channels. Each transistor operates independently with common absolute maximum ratings including −50 V VCEO and −150 mA IC, enabling compact dual-amplifier or complementary driver designs.

Electrical behavior is characterized by high DC current gain linearity (hFE ratio ≥ 0.95 at −0.1 mA/−2 mA), low VCE(sat) of −0.3 V (typ.) at −100 mA/−10 mA, and fT = 80 MHz (min) at −10 V/−1 mA - supporting stable low-frequency amplification with predictable gain response across bias conditions.

Key Specifications

Pinout & Package

Package: ES6 - 6-pin, small-outline surface-mount package (3.0 mg typical weight), designed for space-constrained PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Compared with HN1A01FE-Y,LF, HN1A02FE-Y,LF offers higher guaranteed hFE for precision biasing, while UMX2NTR/Y provides a lower-cost alternative without automotive qualification or voltage/current headroom - making HN1A01FE-Y,LF the optimal choice for AEC-Q101-compliant, −50 V–capable dual-PNP applications.

Availability

HN1A01FE-Y,LF is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor interfaces, and consumer audio pre-amplifiers requiring stable component supply and long-term manufacturability.

Supply support for HN1A01FE-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade performance.

The HN1A01FE-Y,LF belongs to Toshiba's AEC-Q101-qualified dual-transistor family, engineered specifically for space-efficient, high-reliability low-frequency amplification and switching in automotive and industrial control systems.

FAQ

What is the package type and lead pitch of HN1A01FE-Y,LF?

HN1A01FE-Y,LF uses the ES6 surface-mount package with six leads arranged in a single row. Its lead pitch is 0.65 mm, and overall dimensions are 2.9 mm × 1.6 mm × 0.9 mm. This compact footprint supports high-density PCB layouts and standard reflow soldering processes without requiring special tooling for HN1A01FE-Y,LF placement.

Is HN1A01FE-Y,LF qualified for automotive applications?

Yes, HN1A01FE-Y,LF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's official documentation and orderable part number listing. This qualification covers stress testing for high-temperature operating life, temperature cycling, and humidity exposure - making HN1A01FE-Y,LF suitable for under-hood and cabin-mounted automotive electronics where reliability is critical.

What does the "Y" suffix in HN1A01FE-Y,LF indicate?

The "Y" suffix in HN1A01FE-Y,LF denotes the hFE gain classification band: 120–240 at VCE = −6 V and IC = −2 mA. This distinguishes it from the "GR" variant (200–400). The ",LF" suffix indicates lead-free and RoHS-compliant construction. Both identifiers are integral to HN1A01FE-Y,LF's specification and ordering accuracy.

Can HN1A01FE-Y,LF be used in linear amplifier configurations?

Yes, HN1A01FE-Y,LF is optimized for linear operation, evidenced by its excellent hFE linearity (ratio ≥ 0.95 across two decades of collector current) and low VCE(sat). These characteristics ensure stable gain and minimal distortion in Class-A or AB low-frequency amplifier stages - a core design intent confirmed in Toshiba's application notes for HN1A01FE-Y,LF.

What is the maximum total power dissipation for HN1A01FE-Y,LF?

The maximum total power dissipation for HN1A01FE-Y,LF is 100 mW, specified as a package-level rating under Ta = 25 °C. This limit applies to combined dissipation across both transistors. Derating is required above 25 °C ambient, per the PC–Ta curve in Toshiba's HN1A01FE-Y,LF datasheet, to maintain junction temperature ≤ 150 °C.