Toshiba Semiconductor and Storage HN1A01FE-Y,LXHF

Overview

HN1A01FE-Y,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual PNP bipolar junction transistor in ES6 package, rated for VCEO = −50 V, IC = −150 mA (max), and hFE = 120–400. It delivers high hFE linearity (0.95 typ.) and is AEC-Q101 qualified for automotive low-frequency amplifier applications.

For engineers reviewing the HN1A01FE-Y,LXHF datasheet, HN1A01FE-Y,LXHF pinout, HN1A01FE-Y,LXHF application, or HN1A01FE-Y,LXHF equivalent, key selection criteria include dual-transistor symmetry, guaranteed hFE classification (Y: 120–240), −50 V breakdown rating, AEC-Q101 compliance status, and ES6 footprint compatibility with space-constrained automotive signal conditioning designs.

Technical Context

This device integrates two matched silicon PNP epitaxial transistors in a single ES6 package, sharing no internal connection between channels-each transistor operates independently with identical absolute maximum ratings and electrical characteristics. Its design supports discrete dual-amplifier or differential pair configurations where consistent hFE tracking and thermal coupling are beneficial.

The HN1A01FE-Y,LXHF is specified with common test conditions across both transistors (e.g., VCE = −6 V, IC = −2 mA for hFE), and its fT = 80 MHz (typ.) and Cob = 4 pF (typ.) confirm suitability for low-frequency amplification up to several megahertz-not RF or switching power applications.

Key Specifications

Pinout & Package

Package: ES6 - ultra-small surface-mount dual-transistor package (3.0 mg typ., 1.6 × 2.8 × 1.05 mm), optimized for high-density automotive PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP amplifier applications.

Compared with NSV6060DXV6T1G and UMT2907A, the HN1A01FE-Y,LXHF uniquely combines AEC-Q101 qualification, guaranteed hFE linearity, and matched dual topology in ES6-making it the only option qualified for production automotive signal amplification where thermal tracking and reliability are mandatory.

Availability

HN1A01FE-Y,LXHF is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial sensor interfaces, legacy telecom line cards, and low-power analog front-end designs requiring stable component supply and long-term lifecycle support.

Supply support for HN1A01FE-Y,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability.

The HN1A01FE-Y,LXHF belongs to Toshiba's AEC-Q101-qualified bipolar transistor family, engineered specifically for robust, space-efficient low-frequency amplification in harsh-environment automotive and industrial signal chains.

FAQ

What is the AEC-Q101 qualification status of HN1A01FE-Y,LXHF?

The HN1A01FE-Y,LXHF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's orderable part number documentation. This qualification covers temperature cycling, humidity testing, and mechanical stress validation-ensuring suitability for automotive applications including cabin audio and body control modules. The "LXHF" suffix denotes the AEC-Q101-compliant tape-and-reel packaging variant of the HN1A01FE-Y,LXHF.

How does the hFE classification "Y" affect HN1A01FE-Y,LXHF performance?

The "Y" in HN1A01FE-Y,LXHF indicates hFE = 120–240 at VCE = −6 V and IC = −2 mA, per Toshiba's specification table. This tighter binning ensures predictable DC gain in linear amplifier designs and reduces unit-to-unit variation during production calibration. It differs from the "GR" variant (hFE = 200–400), making HN1A01FE-Y,LXHF preferable where moderate, stable gain is prioritized over maximum hFE.

Is HN1A01FE-Y,LXHF pin-compatible with standard SOT-363 dual-transistor packages?

No-HN1A01FE-Y,LXHF uses the ES6 package with a unique 1-2-3-4-5-6 pin assignment (E1-B1-C2-E2-B2-C1), differing from the conventional SOT-363 pinout (E-B-C/E-B-C). Direct PCB replacement requires layout revision. Engineers must consult Toshiba's package drawing Rev.2.0.A to verify trace routing and thermal pad alignment before integration.

What is the maximum operating junction temperature for HN1A01FE-Y,LXHF?

The HN1A01FE-Y,LXHF has a maximum junction temperature (Tj) of +150°C, as specified in Toshiba's Absolute Maximum Ratings table. This rating applies to continuous operation under derated power conditions-PC must be reduced linearly above +25°C ambient per the PC–Ta curve (Fig. 8.7). For automotive applications, ensure board-level thermal design maintains Tj ≤ +150°C at peak ambient +125°C.

Does HN1A01FE-Y,LXHF support high-frequency signal amplification?

The HN1A01FE-Y,LXHF has a typical transition frequency (fT) of 80 MHz at VCE = −10 V and IC = −1 mA, but its primary design intent is low-frequency amplification (e.g., audio, sensor signals < 1 MHz). Its Cob = 4 pF and hFE linearity optimization make it unsuitable for RF or fast-switching applications-use dedicated RF transistors or high-speed digital switches instead of HN1A01FE-Y,LXHF for those roles.