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Toshiba Semiconductor and Storage HN1A01FU-GR,LF
- Part No.:
- HN1A01FU-GR,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
HN1A01FU-GR,LF.pdf
- Description:
- TRANS 2PNP DUAL 50V 150MA US6
- Quantity:
- Payment:
- Shipping:
Inventory:2,219
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Product details
Overview
HN1A01FU-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual PNP bipolar junction transistor in US6 package, rated for VCEO = −50 V, IC(max) = −150 mA per device, and hFE = 200–400 (GR grade), designed for low-frequency amplifier stages in automotive and industrial signal conditioning circuits.
For engineers reviewing the HN1A01FU-GR,LF datasheet, HN1A01FU-GR,LF pinout, HN1A01FU-GR,LF application, or HN1A01FU-GR,LF equivalent, key selection criteria include AEC-Q101 qualification status, dual-transistor symmetry, hFE linearity at low collector currents, and thermal derating on FR4 boards.
Technical Context
This dual PNP transistor integrates two matched silicon epitaxial devices in a single US6 package, sharing no internal connection between units. Each transistor operates independently with common absolute maximum ratings including −50 V VCEO and 200 mW PC (FR4 board).
Electrical behavior is characterized by high hFE linearity-hFE(IC = −0.1 mA)/hFE(IC = −2 mA) = 0.95 typ.-and fT = 7 MHz at IC = −1 mA, supporting stable gain in audio and sensor interface amplifiers below 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Supports rail-to-rail operation in −48 V telecom or −24 V industrial control power domains. |
| IC(max) | −150 mA: Enables direct drive of medium-current loads such as relay coils or LED arrays without external buffering. |
| hFE Range | 200–400 (GR grade): Ensures predictable DC bias stability across production lots for differential pair or current mirror designs. |
| fT | 7 MHz: Validates use in low-frequency amplification up to ~1 MHz with minimal phase shift in feedback networks. |
| hFE Linearity Ratio | 0.95 typ.: Reduces harmonic distortion in Class-A preamplifier stages operating from µA to mA collector currents. |
| PC (FR4) | 200 mW: Limits continuous dissipation to ≤150°C junction temperature on standard 25.4 mm × 25.4 mm × 1.6 mm PCBs. |
Pinout & Package
Package: US6 - surface-mount, 6-pin dual-transistor outline, 6.8 mg typical weight, footprint compatible with JEDEC TO-236AB variants.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter1 | Primary emitter terminal for first PNP transistor; connects to most negative node in its local circuit. |
| 2 | Base1 | Control input for first transistor; requires current-limited biasing to maintain linear operation. |
| 3 | Collector2 | Output terminal for second PNP transistor; polarity inverted relative to emitter2 (i.e., sinks current). |
| 4 | Emitter2 | Emitter terminal for second independent PNP transistor; electrically isolated from Emitter1. |
| 5 | Base2 | Independent base control for second transistor; enables dual-channel amplification or mirroring. |
| 6 | Collector1 | Output terminal for first transistor; used in common-emitter or common-base configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive ambient temperature range (−40°C to +125°C) and humidity/thermal cycling stress profiles. |
| Dual PNP configuration | Two electrically isolated transistors in one US6 package reduce PCB area by ~40% vs. discrete SOT-363 solutions. |
| High hFE linearity | 0.95 hFE ratio ensures consistent small-signal gain across 0.1–2 mA bias range, critical for precision current sources. |
| −50 V VCEO rating | Enables use in legacy −48 V telecom systems and industrial −24 V/−36 V supply rails without additional protection. |
Applications
| Automotive Cabin Sensors | Industrial Current Monitoring |
|---|---|
Use Scenario: Amplifying low-level signals from NTC thermistors or Hall-effect position sensors in vehicle HVAC or seat occupancy modules. IC Role / Device Role / Timing Role: Dual PNP configured as matched current mirrors to reject common-mode noise and scale sensor output. Use Value: AEC-Q101 qualification and hFE linearity ensure stable offset and gain over −40°C to +125°C, reducing calibration drift. | Use Scenario: Building shunt-based current sense amplifiers for motor drive fault detection in PLC I/O modules. IC Role / Device Role / Timing Role: PNP transistors form active load and level-shifting stages to interface mV-range shunt voltage to MCU ADC inputs. Use Value: −50 V VCEO supports operation across wide industrial supply rails (e.g., −24 V to −48 V), improving system robustness. |
| Audio Signal Conditioning | Legacy Telecom Interface |
Use Scenario: Low-noise preamplifier stage in analog audio front-ends for voice-controlled industrial HMIs. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration using one HN1A01FU-GR,LF transistor pair. Use Value: 7 MHz fT and 0.95 hFE linearity minimize THD+N below 1 kHz, meeting <0.5% distortion requirements. | Use Scenario: Line driver/receiver biasing in legacy −48 V telecom central office equipment. IC Role / Device Role / Timing Role: Dual PNP provides complementary bias for op-amp output stages and relay drivers interfacing to PSTN lines. Use Value: Matched hFE and −50 V rating eliminate need for external voltage clamping, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV6058MWT1G | Single PNP, SOT-416, VCEO = −50 V, hFE = 100–300, not AEC-Q101 qualified | Requires two devices for dual functionality; lacks automotive qualification and hFE linearity data | Select only for cost-sensitive non-automotive applications where dual-device matching is not required. |
| UMX2NTN | Dual PNP, SOT-363, VCEO = −50 V, hFE = 120–270, AEC-Q101 qualified, fT = 80 MHz | Higher fT may cause instability in low-frequency designs; smaller hFE range reduces bias predictability at µA levels | Preferable for high-speed switching but less optimal than HN1A01FU-GR,LF for precision low-frequency amplification. |
Compared with NSV6058MWT1G and UMX2NTN, the HN1A01FU-GR,LF uniquely combines AEC-Q101 qualification, verified hFE linearity down to −0.1 mA, and dual-transistor matching in US6-making it optimal for automotive sensor interfaces requiring stable DC gain over temperature.
Availability
HN1A01FU-GR,LF is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial current monitoring, audio signal conditioning, and legacy telecom interface applications requiring stable component supply and long-term lifecycle support.
Supply support for HN1A01FU-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on reliability and automotive-grade performance.
The HN1A01FU-GR,LF belongs to Toshiba's legacy bipolar transistor product line, engineered specifically for low-frequency analog signal amplification in harsh-environment applications including automotive and industrial control.
FAQ
What is the AEC-Q101 qualification status of HN1A01FU-GR,LF?
HN1A01FU-GR,LF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's orderable part number documentation. This qualification covers temperature cycling, humidity bias, mechanical shock, and high-temperature operating life testing per AEC-Q101 Rev. D. The GR suffix indicates the hFE grade, and the ,LF denotes lead-free plating-both compliant with automotive reliability requirements.
How are the two transistors inside HN1A01FU-GR,LF connected internally?
HN1A01FU-GR,LF contains two fully independent PNP transistors with no internal electrical connection between them. Pin 1 (Emitter1), Pin 2 (Base1), and Pin 6 (Collector1) form the first transistor; Pin 4 (Emitter2), Pin 5 (Base2), and Pin 3 (Collector2) form the second. This isolation enables separate biasing and prevents crosstalk in dual-channel designs.
What does the "GR" in HN1A01FU-GR,LF signify?
The "GR" in HN1A01FU-GR,LF designates the hFE classification grade: 200–400 at VCE = −6 V and IC = −2 mA. This higher-gain bin improves bias stability in low-current applications compared to the "Y" grade (120–240), and is specified in Toshiba's Electrical Characteristics table under Note 5.
Can HN1A01FU-GR,LF be used in surface-mount reflow processes?
Yes, HN1A01FU-GR,LF is qualified for lead-free reflow soldering per J-STD-020. Its US6 package uses matte tin plating (,LF suffix), and Toshiba specifies peak reflow temperature ≤260°C for ≤10 seconds. Thermal profile must respect maximum junction temperature limits during assembly to avoid parametric shift or bond wire damage.
What is the meaning of hFE linearity ratio 0.95 in HN1A01FU-GR,LF specifications?
The hFE linearity ratio of 0.95 (typ.) means hFE(IC = −0.1 mA) ÷ hFE(IC = −2 mA) = 0.95, indicating minimal gain variation across three decades of collector current. For HN1A01FU-GR,LF, this ensures predictable small-signal amplification in sensor front-ends where bias currents span µA to mA ranges without recalibration.
HN1A01FU-GR,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 6V
- Power - Max:
- 200mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- US6
HN1A01FU-GR,LF FAQ
1.How can I place an order for HN1A01FU-GR,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1A01FU-GR,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1A01FU-GR,LF reliable?
The price and inventory of HN1A01FU-GR,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1A01FU-GR,LF is usually 5 days.
3.What payment methods are accepted for HN1A01FU-GR,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1A01FU-GR,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1A01FU-GR,LF?
HN1A01FU-GR,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1A01FU-GR,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1A01FU-GR,LF?
For technical support, including HN1A01FU-GR,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1A01FU-GR,LF requirements.
6.How does Aetrix verify that HN1A01FU-GR,LF is sourced from the original manufacturer or authorized distributors?
All HN1A01FU-GR,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1A01FU-GR,LF meets industry standards.
7.What is the process for return or replacement of HN1A01FU-GR,LF?
All HN1A01FU-GR,LF units undergo pre-shipment inspection (PSI). If there is an issue with HN1A01FU-GR,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1A01FU-GR,LF part is unused and in its original packaging.
Return procedure for HN1A01FU-GR,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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