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Toshiba Semiconductor and Storage HN1A01F-Y(TE85L,F)
- Part No.:
- HN1A01F-Y(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
HN1A01F-Y(TE85L,F).pdf
- Description:
- TRANS 2PNP DUAL 50V 150MA SM6
- Quantity:
- Payment:
- Shipping:
Inventory:4,883
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Product details
Overview
HN1A01F-Y(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a dual PNP epitaxial silicon transistor in a small SM6 package, designed for audio frequency general-purpose amplification. It delivers VCEO = −50 V, IC = −150 mA (max), hFE = 120–400, fT = 80 MHz (typ.), and excellent hFE linearity (0.95 typ. ratio at IC = −0.1 mA / −2 mA).
For engineers reviewing the HN1A01F-Y(TE85L,F) datasheet, HN1A01F-Y(TE85L,F) pinout, HN1A01F-Y(TE85L,F) application, or HN1A01F-Y(TE85L,F) equivalent, key selection factors include dual-transistor integration in SM6, high-voltage PNP capability, linear gain behavior across bias currents, and suitability for low-noise preamplifier stages in consumer audio systems.
Technical Context
The HN1A01F-Y(TE85L,F) integrates two identical PNP transistors in a single SM6 dual-package configuration with shared thermal and electrical isolation characteristics. Its PCT process ensures stable hFE linearity and low leakage (ICBO ≤ −0.1 μA at VCB = −50 V), supporting consistent DC biasing in cascaded amplifier topologies.
Designed for audio-frequency operation, it exhibits fT = 80 MHz (typ.) and Cob = 4–7 pF at VCB = −10 V, enabling stable small-signal amplification up to several megahertz without unintended RF oscillation or phase shift in feedback networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Supports rail-to-rail operation in ±24 V audio supply systems without saturation risk. |
| IC (max) | −150 mA: Enables driver-stage current delivery for medium-power speaker outputs or active filters. |
| hFE range | 120–400: Allows precise DC bias design across production lots; Y-grade marking denotes 120–240 range. |
| fT | 80 MHz (typ.): Ensures adequate gain-bandwidth for wideband audio (20 Hz–20 kHz) with margin for stability. |
| Cob | 4–7 pF: Minimizes Miller-effect capacitance in common-emitter configurations, preserving high-frequency response. |
| VCE(sat) | −0.1 to −0.3 V (IC = −100 mA, IB = −10 mA): Reduces conduction loss and thermal rise in Class-A/AB output stages. |
Pinout & Package
Package: SM6 - surface-mount dual-transistor package (JEITA package code 2-3N1A), 0.015 g typical weight, footprint compatible with automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter (Q1) | Common emitter connection point for first transistor; tied internally to pin 4 in some variants but isolated in HN1A01F-Y(TE85L,F) per Toshiba top-view marking diagram. |
| 2 | Base (Q1) | Direct control node for Q1; requires current-limited drive due to IB(max) = −30 mA. |
| 3 | Collector (Q1) | Active output node for Q1; rated for −50 V reverse bias and −150 mA continuous current. |
| 4 | Emitter (Q2) | Independent emitter for second transistor; electrically isolated from Q1's emitter per equivalent circuit diagram. |
| 5 | Base (Q2) | Separate base terminal for Q2; enables independent biasing of dual amplification paths. |
| 6 | Collector (Q2) | Dedicated collector for Q2; supports parallel or differential configurations without cross-conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP topology | Two matched transistors in one SM6 package reduce PCB area by ~40% vs. discrete SOT-363 solutions and improve thermal tracking in push-pull pairs. |
| High hFE linearity | hFE(IC=−0.1 mA)/hFE(IC=−2 mA) = 0.95 (typ.) ensures minimal distortion in low-current preamp stages where gain consistency across signal amplitude is critical. |
| Low Cob | 4–7 pF output capacitance minimizes high-frequency roll-off and stabilizes feedback loops in op-amp input buffers or tone-control networks. |
| PCT process fabrication | Epitaxial base structure provides tighter hFE distribution and lower 1/f noise versus diffused-base alternatives, improving SNR in microphone preamplifiers. |
Applications
| Audio Preamp Stage | DC-Coupled Instrument Amplifier |
|---|---|
Use Scenario: Low-noise voltage amplification of electret microphone or piezoelectric sensor signals before ADC sampling. IC Role / Device Role / Timing Role: Dual PNP configured as cascode or differential pair to suppress Miller capacitance and improve input impedance. Use Value: hFE linearity (0.95 typ.) and low ICBO (≤ −0.1 μA) maintain gain stability across temperature and signal level, reducing calibration drift. | Use Scenario: High-input-impedance, zero-drift amplification of guitar pickup or medical bio-signal sources. IC Role / Device Role / Timing Role: Q1 and Q2 used in complementary emitter-follower buffer + active load configuration for rail-to-rail DC coupling. Use Value: VCEO = −50 V and IC = −150 mA support ±20 V supply rails while delivering >10 mA output current into 1 kΩ loads without clipping. |
| Compact Tone Control Circuit | Discrete Op-Amp Input Pair |
Use Scenario: Passive EQ network with active make-up gain in portable audio mixers or headphone amps. IC Role / Device Role / Timing Role: One transistor amplifies bass/mid/treble band signals; second provides buffered output with low output impedance. Use Value: SM6 package enables < 3 mm² board space usage; Cob = 4–7 pF avoids peaking in 10–20 kHz shelving filters. | Use Scenario: Discrete-input stage for ultra-low-noise instrumentation op-amps requiring custom noise/gain trade-offs. IC Role / Device Role / Timing Role: Q1/Q2 form matched differential pair with external emitter degeneration resistors for adjustable gm and CMRR. Use Value: hFE = 120–400 allows precise gm setting via base current; fT = 80 MHz supports >5 MHz GBW designs when paired with low-capacitance compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HN1A02F-Y(TE85L,F) | Same SM6 package and pinout; hFE = 200–400 (GR grade), higher minimum gain but narrower distribution. | Better suited for fixed-gain stages requiring guaranteed minimum hFE ≥ 200; less ideal for designs relying on mid-range hFE matching. | Select HN1A02F-Y(TE85L,F) only if circuit tolerates tighter hFE spread and benefits from higher baseline gain. |
| UMX2N (ROHM) | SM6 package, dual NPN (not PNP); VCEO = +50 V, hFE = 82–390, fT = 180 MHz. | Requires circuit polarity inversion; superior fT but incompatible for direct PNP replacement in existing bias networks. | Consider UMX2N only in new designs where NPN topology simplifies supply architecture and higher fT justifies redesign effort. |
Compared with HN1A01F-Y(TE85L,F), HN1A02F-Y(TE85L,F) offers higher guaranteed hFE at the cost of reduced matching flexibility, while UMX2N provides higher speed but mandates full schematic revision due to NPN polarity and lack of PNP functionality.
Availability
HN1A01F-Y(TE85L,F) is available at Aetrix Electronics and suitable for audio preamplifier stages, DC-coupled instrument amplifiers, and compact tone control circuits requiring stable component supply and long-term obsolescence management.
Supply support for HN1A01F-Y(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade qualification.
The HN1A series targets audio-frequency analog signal conditioning, leveraging Toshiba's PCT epitaxial process to deliver linear gain behavior and low leakage in compact dual-transistor packages for consumer and professional audio equipment.
FAQ
What is the package type and lead count for HN1A01F-Y(TE85L,F)?
HN1A01F-Y(TE85L,F) uses the SM6 surface-mount package with six leads arranged in a dual-transistor configuration. The JEITA package code is 2-3N1A, and the physical footprint matches standard dual-SOT-363 layouts. Pin 1 is Emitter (Q1), pin 2 is Base (Q1), pin 3 is Collector (Q1), pin 4 is Emitter (Q2), pin 5 is Base (Q2), and pin 6 is Collector (Q2), as confirmed in Toshiba's official top-view marking diagram.
Does HN1A01F-Y(TE85L,F) support audio-frequency amplification up to 20 kHz?
Yes, HN1A01F-Y(TE85L,F) supports full-audio-band amplification with fT = 80 MHz (typ.) and Cob = 4–7 pF, providing ample gain-bandwidth margin for stable 20 Hz–20 kHz operation. Its hFE linearity (0.95 typ. ratio) and low ICBO (≤ −0.1 μA) ensure minimal harmonic distortion and DC drift in preamp and tone-control applications within this range.
What is the hFE classification indicated by the 'Y' suffix in HN1A01F-Y(TE85L,F)?
The 'Y' suffix in HN1A01F-Y(TE85L,F) specifies the hFE bin: 120–240 at VCE = −6 V and IC = −2 mA. This differs from the GR grade (200–400) used in HN1A02F-Y(TE85L,F). The Y grade provides broader hFE tolerance, facilitating easier matching in differential pairs where moderate gain variation is acceptable.
Can HN1A01F-Y(TE85L,F) be used in place of a single SOT-23 PNP transistor?
HN1A01F-Y(TE85L,F) contains two independent PNP transistors and cannot serve as a drop-in replacement for a single-transistor SOT-23 device without circuit modification. Its SM6 pinout and dual functionality require dedicated layout space and separate biasing for each transistor; using only one half forfeits space and thermal advantages of the dual configuration.
Is HN1A01F-Y(TE85L,F) compliant with RoHS and REACH requirements?
HN1A01F-Y(TE85L,F) complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed by Toshiba's environmental compliance documentation. Lead-free soldering is supported per JEDEC J-STD-020 moisture sensitivity level (MSL) 1 rating, and the device carries no substance restrictions beyond those specified in Toshiba's published material declarations.
HN1A01F-Y(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 6V
- Power - Max:
- 300mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM6
HN1A01F-Y(TE85L,F) FAQ
1.How can I place an order for HN1A01F-Y(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1A01F-Y(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1A01F-Y(TE85L,F) reliable?
The price and inventory of HN1A01F-Y(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1A01F-Y(TE85L,F) is usually 5 days.
3.What payment methods are accepted for HN1A01F-Y(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1A01F-Y(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1A01F-Y(TE85L,F)?
HN1A01F-Y(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1A01F-Y(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1A01F-Y(TE85L,F)?
For technical support, including HN1A01F-Y(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1A01F-Y(TE85L,F) requirements.
6.How does Aetrix verify that HN1A01F-Y(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All HN1A01F-Y(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1A01F-Y(TE85L,F) meets industry standards.
7.What is the process for return or replacement of HN1A01F-Y(TE85L,F)?
All HN1A01F-Y(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN1A01F-Y(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1A01F-Y(TE85L,F) part is unused and in its original packaging.
Return procedure for HN1A01F-Y(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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