Toshiba Semiconductor and Storage HN1B01FU-GR,LF

Overview

HN1B01FU-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP (Q1) and one NPN (Q2) silicon epitaxial transistor in a single US6 package. It delivers VCEO = −50 V / +50 V, IC(max) = ±150 mA, hFE = 120–400, and fT = 4 MHz (Q1) / 2 MHz (Q2), enabling compact low-frequency amplifier stages in space-constrained analog signal paths.

For engineers reviewing the HN1B01FU-GR,LF datasheet, HN1B01FU-GR,LF pinout, HN1B01FU-GR,LF application, or HN1B01FU-GR,LF equivalent, key selection criteria include complementary PNP/NPN pairing with matched hFE linearity (0.95 typ.), AEC-Q101 qualification for automotive use, and US6 footprint compatibility with discrete dual-transistor replacement requirements.

Technical Context

The HN1B01FU-GR,LF integrates electrically isolated PNP and NPN transistors sharing no internal connection-Q1 operates with negative-polarity ratings (VCEO = −50 V, IC = −150 mA), while Q2 uses positive-polarity ratings (VCEO = 50 V, IC = 150 mA). Both exhibit high hFE linearity ([email protected]/hFE@2mA = 0.95 typ.) and are rated for PC = 200 mW at Ta = 25 °C on FR4.

Each transistor supports independent biasing: Q1's VCE(sat) = −0.3 V at IC = −100 mA/IB = −10 mA; Q2's VCE(sat) = 0.25 V at IC = 100 mA/IB = 10 mA. Cob = 4 pF (Q1) / 2 pF (Q2) at VCB = −10 V / +10 V, f = 1 MHz, supporting stable low-frequency gain without unintended coupling.

Key Specifications

Pinout & Package

HN1B01FU-GR,LF uses the US6 surface-mount package (6.8 mg, 2.9 × 1.6 × 1.1 mm), optimized for automated placement and thermal performance on 25.4 mm × 25.4 mm × 1.6 mm FR4 boards with 0.32 mm² Cu pads per terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual complementary transistor applications.

Compared with NSBC114YDXV6T1G and UMX2NTR, the HN1B01FU-GR,LF offers superior hFE linearity (0.95 typ.) and guaranteed AEC-Q101 qualification-critical for automotive signal conditioning-while delivering higher power dissipation (200 mW) and tighter low-frequency gain stability.

Availability

HN1B01FU-GR,LF is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor signal chains, and low-frequency audio equipment requiring stable component supply and long-lifecycle support.

Supply support for HN1B01FU-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures semiconductor components focused on efficiency, reliability, and system integration for automotive, industrial, and consumer applications.

The HN1B01FU product line delivers complementary bipolar transistor pairs optimized for low-frequency analog signal processing, offering AEC-Q101 qualification and tight hFE matching to simplify discrete amplifier and interface circuit design.

FAQ

What is the package type and lead count of HN1B01FU-GR,LF?

HN1B01FU-GR,LF uses the US6 surface-mount package with six leads. Its dimensions are 2.9 mm × 1.6 mm × 1.1 mm, and it weighs 6.8 mg (typical). The package supports automated pick-and-place assembly and meets JEDEC moisture sensitivity level 1 (MSL-1) requirements for reflow soldering.

Is HN1B01FU-GR,LF qualified for automotive applications?

Yes, HN1B01FU-GR,LF is AEC-Q101 qualified, as confirmed in the official Toshiba datasheet Rev. 4.0.A. This qualification covers stress tests including temperature cycling, mechanical shock, and humidity resistance-making it suitable for under-hood and dashboard electronics where reliability is critical.

What are the absolute maximum ratings for Q1 and Q2 in HN1B01FU-GR,LF?

Q1 (PNP) has VCBO = −50 V, VCEO = −50 V, VEBO = −5 V, IC(max) = −150 mA, IB(max) = −30 mA. Q2 (NPN) has VCBO = 60 V, VCEO = 50 V, VEBO = 5 V, IC(max) = 150 mA, IB(max) = 30 mA. Both share PC = 200 mW and Tj(max) = 150 °C.

How does the hFE classification "GR" affect HN1B01FU-GR,LF performance?

The "GR" suffix indicates hFE = 200–400 for both Q1 and Q2 at VCE = −6 V/+6 V and IC = −2 mA/+2 mA. This higher-gain bin improves bias stability in Class-A amplifiers and reduces required base drive current compared to the "Y" bin (120–240), directly lowering power consumption in battery-operated systems using HN1B01FU-GR,LF.

Can HN1B01FU-GR,LF replace discrete PNP and NPN transistors in existing designs?

Yes, HN1B01FU-GR,LF can replace two discrete transistors when the US6 footprint and pinout (1:E1, 2:B1, 3:C2, 4:E2, 5:B2, 6:C1) match layout constraints. Its matched hFE linearity and AEC-Q101 qualification provide advantages over uncorrelated discretes-especially in automotive and precision analog designs where HN1B01FU-GR,LF simplifies BOM and improves yield.