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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Toshiba Semiconductor and Storage HN1B01FU-GR,LXHF

Name: HN1B01FU-GR,LXHF
Brand: Toshiba Semiconductor and Storage
SKU: HN1B01FU-GR,LXHF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HN1B01FU-GR,LXHF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Bipolar Transistor Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: HN1B01FU-GR,LXHF.pdf

Description:: TRANS NPN/PNP 50V 150MA US6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

HN1B01FU-GR,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP (Q1) and one NPN (Q2) silicon epitaxial transistor in a single US6 package. It delivers VCEO = −50 V / 50 V, IC = −150 mA / 150 mA, hFE = 120–400, fT = 4 MHz / 2 MHz, and is AEC-Q101 qualified for automotive use. It serves in low-frequency amplifier stages requiring matched complementary gain and voltage handling.

For engineers reviewing the HN1B01FU-GR,LXHF datasheet, HN1B01FU-GR,LXHF pinout, HN1B01FU-GR,LXHF application, or HN1B01FU-GR,LXHF equivalent, key selection criteria include complementary PNP/NPN pairing, AEC-Q101 qualification status, hFE linearity across bias points, US6 footprint compatibility, and thermal derating on FR4 boards.

Technical Context

The HN1B01FU-GR,LXHF integrates electrically isolated PNP and NPN transistors sharing no internal connection-Q1 (PNP) and Q2 (NPN) operate independently with separate emitter, base, and collector terminals. Each transistor supports linear amplification with verified hFE linearity (0.95 typ. ratio at low vs. mid-current), enabling stable small-signal gain over wide dynamic ranges.

Its US6 package places six terminals in a compact 2.9 × 2.8 × 1.1 mm outline with 0.95 mm lead pitch. Thermal design assumes PC = 200 mW on a standard FR4 board (25.4 × 25.4 × 1.6 mm, Cu pad 0.32 mm² × 6), with Tj max = 150 °C and Tstg = −55 to +125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
VCEO (Q1/Q2)	−50 V / 50 V - Supports rail-to-rail signal swing in ±50 V supply amplifier stages without breakdown.
IC (max)	−150 mA / 150 mA - Enables drive capability for medium-current load interfaces like relay drivers or pre-driver stages.
hFE range	120–400 - Provides predictable DC biasing across production lots; GR-grade marking confirms 200–400 bin.
fT	4 MHz (Q1), 2 MHz (Q2) - Sufficient for audio and sub-MHz control-loop amplification, not RF applications.
VCE(sat)	−0.3 V (Q1), 0.25 V (Q2) - Low saturation voltage reduces power loss in switching or Class-AB output stages.
Cob	4 pF (Q1), 4 pF (Q2) - Predictable Miller capacitance aids stability analysis in feedback amplifier designs.
AEC-Q101	Qualified - Validated for automotive underhood temperature cycling, humidity, and mechanical shock per AEC standard.

Pinout & Package

Package: US6 - 6-pin ultra-small surface-mount package (2.9 × 2.8 × 1.1 mm, 0.95 mm pitch), weight 6.8 mg (typ.), designed for high-density PCB layouts and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter of Q1 (PNP)	Current sink node for PNP transistor; connects to lower-rail reference in complementary pair configurations.
2	Base of Q1 (PNP)	Control input for PNP; requires negative bias relative to emitter for turn-on.
3	Collector of Q2 (NPN)	Current source node for NPN; connects to upper-rail supply in push-pull output stages.
4	Emitter of Q2 (NPN)	Current sink node for NPN; ties to ground or common reference in amplifier bias networks.
5	Base of Q2 (NPN)	Control input for NPN; driven positive relative to emitter to activate conduction.
6	Collector of Q1 (PNP)	Current source node for PNP; connects to negative supply or bias rail in dual-supply topologies.

Key Features

Feature	Design Value
Complementary PNP/NPN pairing	Enables single-package Class-AB or push-pull amplifier stages without inter-device matching tolerance penalties.
hFE linearity (0.95 typ.)	Ensures consistent small-signal gain across 0.1–2 mA collector current range-critical for distortion-sensitive audio preamps.
AEC-Q101 qualification	Validates reliability for automotive ambient temperatures (−40 to +125 °C) and lifetime vibration exposure.
US6 footprint compatibility	Matches industry-standard 6-pin SOT-363 layout, enabling drop-in replacement in existing designs using similar dual-transistor packages.
Low VCE(sat) at 100 mA	Reduces conduction loss in driver circuits: −0.3 V (Q1) and 0.25 V (Q2) minimize heat generation at rated current.

Applications

Audio Pre-amplifier Stage	Automotive Sensor Signal Conditioning
Use Scenario: Amplifying low-level microphone or piezoelectric sensor outputs in battery-powered portable audio equipment. IC Role / Device Role / Timing Role: Dual-transistor differential pair providing DC-coupled, low-noise voltage gain with matched hFE tracking. Use Value: GR-grade hFE (200–400) and 0.95 hFE linearity reduce harmonic distortion below −65 dB THD+N at 1 kHz.	Use Scenario: Conditioning analog signals from engine coolant temperature or throttle position sensors in vehicle ECUs. IC Role / Device Role / Timing Role: Complementary emitter-follower buffer isolating microcontroller ADC inputs from noisy sensor harnesses. Use Value: AEC-Q101 qualification ensures operation across −40 to +125 °C ambient, while low Cob (4 pF) preserves signal bandwidth up to 200 kHz.
DC Motor Direction Control	Industrial Relay Driver Interface
Use Scenario: Bidirectional control of 12 V brushed DC motors in HVAC actuators or seat adjusters. IC Role / Device Role / Timing Role: Half-H-bridge driver stage using Q1 (PNP) and Q2 (NPN) as high-side and low-side switches. Use Value: VCEO = ±50 V withstands inductive kickback; VCE(sat) ≤ 0.3 V limits power dissipation to <15 mW per transistor at 100 mA.	Use Scenario: Driving 5–24 V coil relays from 3.3 V/5 V logic outputs in PLC I/O modules. IC Role / Device Role / Timing Role: Darlington-compatible interface stage boosting logic-level current to ≥100 mA relay coil drive. Use Value: IC(max) = ±150 mA and hFE ≥120 ensure full relay actuation with <10 mA base drive, reducing MCU GPIO loading.

Audio Pre-amplifier Stage

Automotive Sensor Signal Conditioning

Use Scenario: Amplifying low-level microphone or piezoelectric sensor outputs in battery-powered portable audio equipment.

IC Role / Device Role / Timing Role: Dual-transistor differential pair providing DC-coupled, low-noise voltage gain with matched hFE tracking.

Use Value: GR-grade hFE (200–400) and 0.95 hFE linearity reduce harmonic distortion below −65 dB THD+N at 1 kHz.

Use Scenario: Conditioning analog signals from engine coolant temperature or throttle position sensors in vehicle ECUs.

IC Role / Device Role / Timing Role: Complementary emitter-follower buffer isolating microcontroller ADC inputs from noisy sensor harnesses.

Use Value: AEC-Q101 qualification ensures operation across −40 to +125 °C ambient, while low Cob (4 pF) preserves signal bandwidth up to 200 kHz.

DC Motor Direction Control

Industrial Relay Driver Interface

Use Scenario: Bidirectional control of 12 V brushed DC motors in HVAC actuators or seat adjusters.

IC Role / Device Role / Timing Role: Half-H-bridge driver stage using Q1 (PNP) and Q2 (NPN) as high-side and low-side switches.

Use Value: VCEO = ±50 V withstands inductive kickback; VCE(sat) ≤ 0.3 V limits power dissipation to <15 mW per transistor at 100 mA.

Use Scenario: Driving 5–24 V coil relays from 3.3 V/5 V logic outputs in PLC I/O modules.

IC Role / Device Role / Timing Role: Darlington-compatible interface stage boosting logic-level current to ≥100 mA relay coil drive.

Use Value: IC(max) = ±150 mA and hFE ≥120 ensure full relay actuation with <10 mA base drive, reducing MCU GPIO loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSBC114YDXV6T1G	PNP/NPN pair with hFE = 100–300, VCEO = −50 V / 50 V, but fT = 250 MHz - optimized for high-speed switching, not linearity.	Preferred for digital logic interfacing; unsuitable where hFE linearity or low-distortion analog gain is required.	Select only when speed > linearity; verify layout compatibility-same US6 footprint but different pinout (1=E1, 2=B1, 3=C1, 4=E2, 5=B2, 6=C2).
UMX2NTR	PNP/NPN pair with hFE = 80–200, VCEO = −50 V / 50 V, PC = 150 mW - lower power rating and narrower hFE range than HN1B01FU-GR,LXHF.	Suitable for cost-sensitive consumer electronics; lacks AEC-Q101 qualification and hFE linearity spec.	Acceptable for non-automotive, non-critical gain-stability applications; derate power by 25% for equivalent thermal margin.

Compared with NSBC114YDXV6T1G and UMX2NTR, the HN1B01FU-GR,LXHF offers superior hFE linearity (0.95 typ.) and AEC-Q101 validation-making it the only choice for automotive signal conditioning where gain consistency across temperature and current matters more than raw switching speed.

Availability

HN1B01FU-GR,LXHF is available at Aetrix Electronics and suitable for low-frequency amplifiers, automotive sensor interfaces, and industrial relay driver circuits requiring stable component supply and long-term lifecycle support.

Supply support for HN1B01FU-GR,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and automotive-grade quality.

The HN1B01FU series belongs to Toshiba's general-purpose bipolar transistor family engineered for low-frequency linear amplification and complementary switching in space-constrained, thermally demanding environments.

FAQ

What is the pin configuration of HN1B01FU-GR,LXHF?

HN1B01FU-GR,LXHF uses a US6 package with six terminals: Pin 1 = Emitter of Q1 (PNP), Pin 2 = Base of Q1, Pin 3 = Collector of Q2 (NPN), Pin 4 = Emitter of Q2, Pin 5 = Base of Q2, Pin 6 = Collector of Q1. This arrangement supports independent biasing of both transistors in complementary amplifier or switching topologies.

Is HN1B01FU-GR,LXHF qualified for automotive applications?

Yes, HN1B01FU-GR,LXHF is AEC-Q101 qualified, as confirmed in Toshiba's orderable part number documentation. The "LXHF" suffix specifically denotes automotive-grade qualification, including testing for temperature cycling, humidity, and mechanical shock per AEC standards.

What does the "GR" in HN1B01FU-GR,LXHF indicate?

The "GR" suffix in HN1B01FU-GR,LXHF indicates the hFE gain bin: 200–400 at VCE = −6 V / 6 V and IC = −2 mA / 2 mA. This higher-gain bin improves bias stability and reduces required base drive current compared to the "Y" bin (120–240).

What is the maximum power dissipation for HN1B01FU-GR,LXHF?

HN1B01FU-GR,LXHF has a total collector power dissipation (PC) of 200 mW when mounted on a standard FR4 board (25.4 × 25.4 × 1.6 mm, Cu pad 0.32 mm² × 6). Derating is required above Ta = 25 °C-approximately 1.6 mW/°C reduction beyond that point per Toshiba's thermal data.

Can HN1B01FU-GR,LXHF replace discrete SOT-23 PNP and NPN transistors in existing designs?

Yes, HN1B01FU-GR,LXHF can replace two discrete SOT-23 transistors if the PCB layout accommodates the US6 footprint (2.9 × 2.8 mm) and pin assignments match functional roles. Its integrated complementary pair reduces component count and improves thermal coupling-though pinout differs from standard SOT-23 duals, requiring layout verification.

HN1B01FU-GR,LXHF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 1 NPN, 1 PNP

Current - Collector (Ic) (Max):: 150mA

Voltage - Collector Emitter Breakdown (Max):: 50V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 6V

Power - Max:: 200mW

Frequency - Transition:: 120MHz, 150MHz

Operating Temperature:: -

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: US6

HN1B01FU-GR,LXHF FAQ

1.How can I place an order for HN1B01FU-GR,LXHF through Aetrix?

Please submit a Request for Quotation (RFQ) for HN1B01FU-GR,LXHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HN1B01FU-GR,LXHF reliable?

The price and inventory of HN1B01FU-GR,LXHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1B01FU-GR,LXHF is usually 5 days.

3.What payment methods are accepted for HN1B01FU-GR,LXHF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1B01FU-GR,LXHF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HN1B01FU-GR,LXHF?

HN1B01FU-GR,LXHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HN1B01FU-GR,LXHF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HN1B01FU-GR,LXHF?

For technical support, including HN1B01FU-GR,LXHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1B01FU-GR,LXHF requirements.

6.How does Aetrix verify that HN1B01FU-GR,LXHF is sourced from the original manufacturer or authorized distributors?

All HN1B01FU-GR,LXHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1B01FU-GR,LXHF meets industry standards.

7.What is the process for return or replacement of HN1B01FU-GR,LXHF?

All HN1B01FU-GR,LXHF units undergo pre-shipment inspection (PSI). If there is an issue with HN1B01FU-GR,LXHF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HN1B01FU-GR,LXHF part is unused and in its original packaging.

Return procedure for HN1B01FU-GR,LXHF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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