Toshiba Semiconductor and Storage HN1B01FU-Y(L,F,T)

Overview

HN1B01FU-Y(L,F,T) from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP (Q1) and one NPN (Q2) silicon epitaxial transistor in a single US6 package. It delivers VCEO = ±50 V, IC(max) = ±150 mA, hFE = 120–400, and fT = 4 MHz (Q1) / 2 MHz (Q2), enabling complementary low-frequency amplification in compact analog circuits.

For engineers reviewing the HN1B01FU-Y(L,F,T) datasheet, HN1B01FU-Y(L,F,T) pinout, HN1B01FU-Y(L,F,T) application, or HN1B01FU-Y(L,F,T) equivalent, key selection factors include dual complementary topology, AEC-Q101 qualification for automotive use, hFE linearity (0.95 typ.), and US6 footprint compatibility with space-constrained PCB layouts.

Technical Context

The HN1B01FU-Y(L,F,T) integrates electrically isolated PNP and NPN transistors sharing no internal connection-Q1 operates with negative-polarity ratings (VCEO = −50 V, IC = −150 mA), while Q2 uses positive-polarity ratings (VCEO = 50 V, IC = 150 mA). Both exhibit matched hFE ranges (120–400) and high linearity (hFE ratio = 0.95 typ.) across bias currents.

It supports low-frequency amplifier stages requiring complementary gain pairs without discrete device matching. Absolute maximum ratings are defined separately per transistor (e.g., Q1 PC = 200 mW at Ta = 25 °C on FR4), and thermal derating follows Toshiba's reliability guidelines for junction temperature up to 150 °C.

Key Specifications

Pinout & Package

Package: US6 - ultra-small 6-pin surface-mount package (6.8 mg typ., 2.0 × 1.25 × 0.9 mm), optimized for high-density analog PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary bipolar transistor applications.

Compared with HN1B01FU-Y(L,F,T), HN1B02FU-Y offers higher frequency response at the expense of increased output capacitance, while UMX2N provides a lower-cost, non-qualified alternative with reduced gain-making HN1B01FU-Y(L,F,T) the optimal balance of linearity, voltage rating, and automotive compliance.

Availability

HN1B01FU-Y(L,F,T) is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial analog front-ends, and portable audio pre-amplifiers requiring stable component supply with AEC-Q101 assurance and US6 footprint consistency.

Supply support for HN1B01FU-Y(L,F,T) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade performance.

The HN1B01FU series belongs to Toshiba's complementary bipolar transistor family engineered for low-frequency linear amplification and signal conditioning in space-constrained, thermally demanding environments-including automotive and industrial control systems.

FAQ

What is the pin configuration of HN1B01FU-Y(L,F,T)?

HN1B01FU-Y(L,F,T) uses the US6 package with six pins: Pin 1 = Q1 Emitter, Pin 2 = Q1 Base, Pin 3 = Q2 Collector, Pin 4 = Q2 Emitter, Pin 5 = Q2 Base, Pin 6 = Q1 Collector. This arrangement supports complementary amplifier and switch configurations without cross-coupling between transistors.

Is HN1B01FU-Y(L,F,T) qualified for automotive applications?

Yes, HN1B01FU-Y(L,F,T) is AEC-Q101 qualified, verified per the official Toshiba orderable part number list. This qualification covers temperature cycling, high-temperature reverse bias, and humidity testing-making HN1B01FU-Y(L,F,T) suitable for under-hood and cabin electronics in passenger vehicles.

What are the hFE classification options for HN1B01FU-Y(L,F,T)?

HN1B01FU-Y(L,F,T) carries the "Y" hFE grade, specifying a DC current gain range of 120 to 240 for both Q1 and Q2 at VCE = ±6 V and IC = ±2 mA. The "GR" grade (200–400) is available under alternate order codes like HN1B01FU-GR, but not for the -Y suffix variant.

Can HN1B01FU-Y(L,F,T) replace discrete PNP+NPN transistor pairs?

Yes, HN1B01FU-Y(L,F,T) replaces two discrete SOT-363 or SC-70 transistors with matched characteristics and identical US6 footprint. Its integrated layout reduces parasitic inductance, improves thermal coupling, and eliminates manual matching-making HN1B01FU-Y(L,F,T) ideal for production-scale analog boards where consistency matters.

What is the maximum power dissipation for HN1B01FU-Y(L,F,T) at 25°C?

HN1B01FU-Y(L,F,T) has a total collector power dissipation (PC) rating of 200 mW at Ta = 25 °C when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with 0.32 mm² Cu pads per transistor). Derating is required above 25 °C per the published PC–Ta curve in the datasheet.