Toshiba Semiconductor and Storage HN1B01FU-Y,LXHF

Overview

HN1B01FU-Y,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP (Q1) and one NPN (Q2) silicon epitaxial transistor in a single US6 package. It delivers VCEO = −50 V / 50 V, IC = −150 mA / 150 mA, hFE = 120–400, fT = 4 MHz / 2 MHz, and AEC-Q101 qualification for automotive use. It serves in low-frequency amplifier stages requiring matched complementary gain and voltage handling.

For engineers reviewing the HN1B01FU-Y,LXHF datasheet, HN1B01FU-Y,LXHF pinout, HN1B01FU-Y,LXHF application, or HN1B01FU-Y,LXHF equivalent, key selection criteria include complementary PNP/NPN pairing, AEC-Q101 compliance status, hFE linearity across bias points, US6 footprint compatibility, and thermal derating on FR4 boards.

Technical Context

The HN1B01FU-Y,LXHF integrates electrically isolated PNP and NPN transistors sharing no internal connection-Q1 operates with negative-polarity ratings (VCEO = −50 V, IC = −150 mA), Q2 with positive-polarity ratings (VCEO = 50 V, IC = 150 mA). Both exhibit high hFE linearity (0.95 typ. ratio at low vs. mid-current), supporting stable small-signal amplification without gain compression.

It uses a monolithic US6 surface-mount package with six terminals arranged as E1–B1–C2–E2–B2–C1. Thermal design assumes PC = 200 mW on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 0.32 mm² copper pads per terminal, and junction temperature must remain ≤150 °C under continuous operation.

Key Specifications

Pinout & Package

HN1B01FU-Y,LXHF is housed in a 6-pin US6 (Ultra Small Package-6) surface-mount package measuring 1.6 mm × 2.8 mm × 0.9 mm (typ.), with 6.8 mg mass and gull-wing leads. The package supports automated placement and reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary bipolar transistor applications.

Compared with NSBC114YDXV6T1G and UMT1N/UMT2N, the HN1B01FU-Y,LXHF uniquely provides AEC-Q101-compliant, matched PNP+NPN gain linearity in a thermally rated US6 package-enabling reliable dual-polarity amplification where safety-critical bias stability matters.

Availability

HN1B01FU-Y,LXHF is available at Aetrix Electronics and suitable for automotive door modules, industrial sensor interfaces, audio pre-amplifiers, and legacy control system upgrades requiring stable component supply and long-term lifecycle support.

Supply support for HN1B01FU-Y,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade compliance.

The HN1B01FU-Y,LXHF belongs to Toshiba's general-purpose bipolar transistor family targeting low-frequency amplification and interface functions in harsh-environment applications where AEC-Q101 validation and thermal robustness are essential.

FAQ

What is the AEC-Q101 qualification status of HN1B01FU-Y,LXHF?

HN1B01FU-Y,LXHF is explicitly AEC-Q101 qualified per the manufacturer's orderable part number list and datasheet Rev.4.0.A. This certification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD per human-body model (HBM) and machine model (MM), confirming suitability for automotive electronic control units operating from −40 °C to +125 °C ambient.

Does HN1B01FU-Y,LXHF contain matched PNP and NPN transistors on one die?

No-HN1B01FU-Y,LXHF integrates two electrically isolated silicon epitaxial transistors (one PNP, one NPN) in a single US6 package, but they are not monolithically matched. Parameters like hFE and VBE are specified separately per device (Q1 and Q2), with no guaranteed tracking between them. Designers must account for independent parameter spreads during biasing.

What is the maximum power dissipation for HN1B01FU-Y,LXHF under standard PCB conditions?

HN1B01FU-Y,LXHF has a total collector power dissipation (PC) rating of 200 mW when mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 0.32 mm² copper pads per terminal. Derating is required above Ta = 25 °C at 2.0 mW/°C, reaching zero dissipation at Ta = 125 °C per the PC–Ta curve in the datasheet.

Can HN1B01FU-Y,LXHF replace discrete SOT-23 transistors in existing layouts?

No-HN1B01FU-Y,LXHF uses a 6-pin US6 package (1.6 mm × 2.8 mm) with non-standard pinout (E1–B1–C2–E2–B2–C1), differing from SOT-23 footprints and terminal assignments. Direct replacement would require PCB redesign. Equivalent discrete alternatives like UMT1N/UMT2N share the US6 outline but lack AEC-Q101 validation.

What does the "LXHF" suffix indicate in HN1B01FU-Y,LXHF?

The "LXHF" suffix denotes lead-free (LF), halogen-free (HF), and RoHS-compliant construction per Toshiba's environmental specifications. It confirms compliance with EU Directive 2011/65/EU and JIS C 0950, with tin-silver-copper (SnAgCu) terminations and no brominated flame retardants in the mold compound.